Hiroshi Takato

Person

Yokohama-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device manufacturing method permitting suppression of...
- Patent number 6,551,882
- Issue date Apr 22, 2003
- Kabushiki Kaisha Toshiba
- Akiko Nomachi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a memory cell region and peripheral cir...
- Patent number 6,339,237
- Issue date Jan 15, 2002
- Kabushiki Kaisha Toshiba
- Akiko Nomachi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a trench capacitor
- Patent number 6,312,982
- Issue date Nov 6, 2001
- Kabushiki Kaisha Toshiba
- Hiroshi Takato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and semiconductor de...
- Patent number 5,923,073
- Issue date Jul 13, 1999
- Kabushiki Kaisha Toshiba
- Masami Aoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 5,488,242
- Issue date Jan 30, 1996
- Kabushiki Kaisha Toshiba
- Kazumasa Sunouchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device isolated by a trench
- Patent number 5,384,280
- Issue date Jan 24, 1995
- Kabushiki Kaisha Toshiba
- Masami Aoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and process for manufacturing the same
- Patent number 5,371,024
- Issue date Dec 6, 1994
- Kabushiki Kaisha Toshiba
- Katsuhiko Hieda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS-type semiconductor integrated circuit device
- Patent number 5,258,635
- Issue date Nov 2, 1993
- Kabushiki Kaisha Toshiba
- Akihiro Nitayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor memory device
- Patent number 5,248,628
- Issue date Sep 28, 1993
- Kabushiki Kaisha Toshiba
- Naoko Okabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
A P channel MIS type semiconductor device
- Patent number 5,164,801
- Issue date Nov 17, 1992
- Kabushiki Kaisha Toshiba
- Katsuhiko Hieda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and its fabricating method
- Patent number 5,144,579
- Issue date Sep 1, 1992
- Kabushiki Kaisha Toshiba
- Naoko Okabe
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20010010390
- Publication date Aug 2, 2001
- Kabushiki Kaisha Toshiba
- Akiko Nomachi
- H01 - BASIC ELECTRIC ELEMENTS

Hiroshi Takato

Person

Patents Grantslast 30 patents

Semiconductor device manufacturing method permitting suppression of...

Semiconductor device having a memory cell region and peripheral cir...

Method of fabricating a trench capacitor

Method of manufacturing a semiconductor device and semiconductor de...

Semiconductor memory device

Method of manufacturing a semiconductor device isolated by a trench

Semiconductor device and process for manufacturing the same

MOS-type semiconductor integrated circuit device

Method of fabricating a semiconductor memory device

A P channel MIS type semiconductor device

Semiconductor memory device and its fabricating method

Patents Applicationslast 30 patents

Semiconductor device and method of manufacturing the same