Hiroyuki Kinoshita

Person

Yokaichi-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide single crystal, silicon carbide substrate and manuf...
- Patent number 8,013,343
- Issue date Sep 6, 2011
- Sumitomo Electric Industries, Ltd
- Hiromu Shiomi
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC crystal and semiconductor device
- Patent number 7,855,385
- Issue date Dec 21, 2010
- Meijo University
- Satoshi Kamiyama
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Semiconductor and method of semiconductor fabrication
- Patent number 7,732,826
- Issue date Jun 8, 2010
- Satoshi Kamiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diboride single crystal substrate, semiconductor device using this...
- Patent number 7,297,989
- Issue date Nov 20, 2007
- National Institute for Materials Science
- Shigeki Otani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sapphire monocrystal, semiconductor laser diode using the same for...
- Patent number 6,819,693
- Issue date Nov 16, 2004
- Kyocera Corporation
- Hiroyuki Kinoshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sapphire single crystal, semiconductor laser diode using the same f...
- Patent number 6,809,010
- Issue date Oct 26, 2004
- Kyocera Corporation
- Hiroyuki Kinoshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Boride-based substrate for growing semiconducting layers thereon an...
- Patent number 6,566,218
- Issue date May 20, 2003
- National Institute for Materials Science
- Shigeki Otani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optical system for optical recording
- Patent number 6,043,940
- Issue date Mar 28, 2000
- Kyocera Corporation
- Kazushi Kamiyama
- G02 - OPTICS

Patents Applicationslast 30 patents

Information Patent Application
SiC crystal and semiconductor device
- Publication number 20080277670
- Publication date Nov 13, 2008
- Meijo University
- Satoshi Kamiyama
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Application
Phoshor and light-emitting diode
- Publication number 20070176531
- Publication date Aug 2, 2007
- Hiroyuki Kinoshita
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor and method of semiconductor fabrication
- Publication number 20070114560
- Publication date May 24, 2007
- Meijo University
- Satoshi Kamiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diboride single crystal substrate, semiconductor device using this...
- Publication number 20060102924
- Publication date May 18, 2006
- Shigeki Otani
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon carbide single crystal, silicon carbide substrate and manuf...
- Publication number 20060091402
- Publication date May 4, 2006
- SiXON Ltd.
- Hiromu Shiomi
- C30 - CRYSTAL GROWTH
Information Patent Application
Sapphire monocrystal, semiconductor laser diode using the same for...
- Publication number 20040109486
- Publication date Jun 10, 2004
- KYOCERA CORPORATION
- Hiroyuki Kinoshita
- C30 - CRYSTAL GROWTH
Information Patent Application
Boride-based substrate for growing semiconducting layers thereon an...
- Publication number 20020038892
- Publication date Apr 4, 2002
- NATIONAL INSTITUTE FOR MATERIALS SCIENCE and KYOCERA CORPORATION
- Shigeki Otani
- C30 - CRYSTAL GROWTH

Hiroyuki Kinoshita

Person

Patents Grantslast 30 patents

Silicon carbide single crystal, silicon carbide substrate and manuf...

SiC crystal and semiconductor device

Semiconductor and method of semiconductor fabrication

Diboride single crystal substrate, semiconductor device using this...

Sapphire monocrystal, semiconductor laser diode using the same for...

Sapphire single crystal, semiconductor laser diode using the same f...

Boride-based substrate for growing semiconducting layers thereon an...

Optical system for optical recording

Patents Applicationslast 30 patents

SiC crystal and semiconductor device

Phoshor and light-emitting diode

Semiconductor and method of semiconductor fabrication

Diboride single crystal substrate, semiconductor device using this...

Silicon carbide single crystal, silicon carbide substrate and manuf...

Sapphire monocrystal, semiconductor laser diode using the same for...

Boride-based substrate for growing semiconducting layers thereon an...