Hiroyuki MASATO

Person

Osaka, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating a semiconductor device
- Patent number 7,585,706
- Issue date Sep 8, 2009
- Panasonic Corporation
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 7,307,292
- Issue date Dec 11, 2007
- Matsushita Electric Industrial Co., Ltd.
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an active region formed from group III...
- Patent number 7,285,806
- Issue date Oct 23, 2007
- Matsushita Electric Industrial Co., Ltd.
- Katsunori Nishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,924,516
- Issue date Aug 2, 2005
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 6,852,612
- Issue date Feb 8, 2005
- Matsushita Electric Industrial Co., Ltd.
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,812,505
- Issue date Nov 2, 2004
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Palladium silicide (PdSi) schottky electrode for gallium nitride se...
- Patent number 6,809,352
- Issue date Oct 26, 2004
- Matsushita Electric Industrial Co., Ltd.
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hetero-junction field effect transistor having an InGaAIN cap film
- Patent number 6,787,820
- Issue date Sep 7, 2004
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 6,774,449
- Issue date Aug 10, 2004
- Matsushita Electric Industrial Co., Ltd.
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based HFET having a surface-leakage reducing cap layer
- Patent number 6,639,255
- Issue date Oct 28, 2003
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 6,593,193
- Issue date Jul 15, 2003
- Matsushita Electric Industrial Co., Ltd.
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,531,718
- Issue date Mar 11, 2003
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming ohmic electrode, and semiconductor device
- Patent number 6,274,889
- Issue date Aug 14, 2001
- Matsushita Electric Industrial Co., Ltd.
- Yorito Ota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming an ohmic electrode
- Patent number 6,110,813
- Issue date Aug 29, 2000
- Matsushita Electric Industrial Co., Ltd.
- Yorito Ota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors and method of manufacturing the same
- Patent number 5,925,903
- Issue date Jul 20, 1999
- Matsushita Electric Industrial Co., Ltd.
- Junko Iwanaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor and method of manufacturing the same
- Patent number 5,905,277
- Issue date May 18, 1999
- Matsushita Electric Industrial Co., Ltd.
- Yorito Ota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 5,824,575
- Issue date Oct 20, 1998
- Matsushita Electric Industrial Co., Ltd.
- Hiromasa Fujimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor and method of manufacturing the same
- Patent number 5,585,655
- Issue date Dec 17, 1996
- Matsushita Electric Industrial Co., Ltd.
- Yorito Ota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction field effect transistor
- Patent number 5,486,705
- Issue date Jan 23, 1996
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device and method of fabricating the same
- Publication number 20080038856
- Publication date Feb 14, 2008
- Matsushita Electronics Corporation
- Katsunori NISHII
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semisonductor device
- Publication number 20050006664
- Publication date Jan 13, 2005
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20050001234
- Publication date Jan 6, 2005
- Matsushita Electric Industrial Co., Ltd.
- Kaoru INOUE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20040113158
- Publication date Jun 17, 2004
- Matsushita Electric Industrial Co., Ltd.
- Kaoru INOUE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20030209762
- Publication date Nov 13, 2003
- Matsushita Electric Industrial Co., Ltd.
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having an active region formed from group III...
- Publication number 20030205721
- Publication date Nov 6, 2003
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20030107101
- Publication date Jun 12, 2003
- Matsushita Electric Industrial Co., Ltd.
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20030109088
- Publication date Jun 12, 2003
- Matsushita Electronics Corporation
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20020139995
- Publication date Oct 3, 2002
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20020119610
- Publication date Aug 29, 2002
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20010020700
- Publication date Sep 13, 2001
- kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20010015446
- Publication date Aug 23, 2001
- kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS

Hiroyuki MASATO

Person

Patents Grantslast 30 patents

Method of fabricating a semiconductor device

Semiconductor device and method for fabricating the same

Semiconductor device having an active region formed from group III...

Semiconductor device

Semiconductor device and method for fabricating the same

Semiconductor device

Palladium silicide (PdSi) schottky electrode for gallium nitride se...

Hetero-junction field effect transistor having an InGaAIN cap film

Semiconductor device and method for fabricating the same

GaN-based HFET having a surface-leakage reducing cap layer

Semiconductor device and method for fabricating the same

Semiconductor device

Method for forming ohmic electrode, and semiconductor device

Method for forming an ohmic electrode

Field-effect transistors and method of manufacturing the same

Field-effect transistor and method of manufacturing the same

Semiconductor device and method of manufacturing the same

Field-effect transistor and method of manufacturing the same

Heterojunction field effect transistor

Patents Applicationslast 30 patents

Semiconductor device and method of fabricating the same

Semisonductor device

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

Semiconductor device and method for fabricating the same

Semiconductor device having an active region formed from group III...

Semiconductor device and method for fabricating the same

Semiconductor device and method for fabricating the same

Semiconductor device

Semiconductor device and method for fabricating the same

Semiconductor device

Semiconductor device