“Piezoelectric doping in AllnGaN/GaN heterostructures”, by M. Asif Khan, et al., Applied Physics Letters, vol. 75, No. 18, Nov. 1, 1999, pp. 2806-2808. |
Japanese Office Action dated Jul. 4, 2002. |
Copy of Office Action dated 12/114/2000 issued in the corresponding Japanese application for this case. |
“Measurement of Piezoelectrically Induced Charge in GaN/AIGaN Heterostructure Field-Effect Transistors”, by E.T. Yu, et al., Appl. Phys. Letters vol. 71, No. 19, pps. 2794-2796. |
“Two-Channel AIGaN/GaN Heterostructure Field Effect Transistor for High Power Application”, by R. Gaska, from Journal of Applied Physics, vol. 85, No. 5, pps. 3009-3011. |