Hiroyuki Matsunami

Person

Kyoto, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide semiconductor device
- Patent number RE43840
- Issue date Dec 4, 2012
- Denso Corporation
- Mitsuhiro Kataoka
- 257 - Active solid-state devices
Information Patent Grant
Lateral junction field effect transistor and method of manufacturin...
- Patent number 7,671,387
- Issue date Mar 2, 2010
- Sumitomo Electric Industries, Ltd.
- Kazuhiro Fujikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral junction field effect transistor and method of manufacturin...
- Patent number 7,671,388
- Issue date Mar 2, 2010
- Sumitomo Electric Industries, Ltd.
- Kazuhiro Fujikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of growing semiconductor crystal
- Patent number 7,625,447
- Issue date Dec 1, 2009
- Japan Science and Technology Agency
- Jun Suda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and method for manufacturing same
- Patent number 7,622,763
- Issue date Nov 24, 2009
- Japan Science and Technology Agency
- Jun Suda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral junction field-effect transistor
- Patent number 7,528,426
- Issue date May 5, 2009
- Sumitomo Electric Industries, Ltd
- Shin Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral junction field effect transistor and method of manufacturin...
- Patent number 7,420,232
- Issue date Sep 2, 2008
- Sumitomo Electric Industries, Ltd.
- Kazuhiro Fujikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 7,321,142
- Issue date Jan 22, 2008
- Sumitomo Electric Industries, Ltd
- Kazuhiro Fujikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diboride single crystal substrate, semiconductor device using this...
- Patent number 7,297,989
- Issue date Nov 20, 2007
- National Institute for Materials Science
- Shigeki Otani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device having trench in sili...
- Patent number 7,241,694
- Issue date Jul 10, 2007
- Denso Corporation
- Yuuichi Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral junction field effect transistor and method of manufacturin...
- Patent number 7,049,644
- Issue date May 23, 2006
- Sumitomo Electric Industries, Ltd.
- Kazuhiro Fujikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral junction field-effect transistor
- Patent number 7,023,033
- Issue date Apr 4, 2006
- Sumitomo Electric Industries, Ltd.
- Shin Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pinch-off type vertical junction field effect transistor and method...
- Patent number 6,870,189
- Issue date Mar 22, 2005
- Sumitomo Electric Industries, Ltd.
- Shin Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 6,853,006
- Issue date Feb 8, 2005
- Denso Corporation
- Mitsuhiro Kataoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC wafer, SiC semiconductor device, and production method of SiC w...
- Patent number 6,734,461
- Issue date May 11, 2004
- Sixon Inc.
- Hiromu Shiomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sic single crystal and method for growing the same
- Patent number 6,660,084
- Issue date Dec 9, 2003
- Sixon, Inc.
- Hiromu Shiomi
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
LATERAL JUNCTION FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURIN...
- Publication number 20090315082
- Publication date Dec 24, 2009
- Sumitomo Electric Industries, Ltd.
- Kazuhiro Fujikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
4H-POLYTYPE GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICE ON A 4H-POLY...
- Publication number 20090261362
- Publication date Oct 22, 2009
- PANASONIC CORPORATION
- Tetsuzo UEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral Junction Field Effect Transistor and Method of Manufacturin...
- Publication number 20080277696
- Publication date Nov 13, 2008
- Sumitomo Electric Industries, Ltd.
- Kazuhiro Fujikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Susceptor
- Publication number 20070186858
- Publication date Aug 16, 2007
- Toyo Tanso Co., Ltd.
- Tunenobu Kimoto
- C30 - CRYSTAL GROWTH
Information Patent Application
Lateral junction field effect transistor and method of manufacturin...
- Publication number 20060202238
- Publication date Sep 14, 2006
- Sumitomo Electric Industries, Ltd.
- Kazuhiro Fujikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor and method for manufacturing same
- Publication number 20060194379
- Publication date Aug 31, 2006
- Jun Suda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of growing semiconductor crystal
- Publication number 20060180077
- Publication date Aug 17, 2006
- Jun Suda
- C30 - CRYSTAL GROWTH
Information Patent Application
Lateral junction field-effect transistor
- Publication number 20060118813
- Publication date Jun 8, 2006
- Sumitomo Electric Industries, Ltd.
- Shin Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor
- Publication number 20060113574
- Publication date Jun 1, 2006
- Kazuhiro Fujikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diboride single crystal substrate, semiconductor device using this...
- Publication number 20060102924
- Publication date May 18, 2006
- Shigeki Otani
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for manufacturing semiconductor device having trench in sili...
- Publication number 20050233539
- Publication date Oct 20, 2005
- Yuuichi Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
4H-polytype gallium nitride-based semiconductor device on a 4H-poly...
- Publication number 20050218414
- Publication date Oct 6, 2005
- Tetsuzo Ueda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral junctiion field-effect transistor and its manufacturing method
- Publication number 20050093017
- Publication date May 5, 2005
- Kazuhiro Fujikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbide semiconductor device
- Publication number 20040051136
- Publication date Mar 18, 2004
- Mitsuhiro Kataoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral junction type field effect transistor
- Publication number 20030168704
- Publication date Sep 11, 2003
- Shin Harada
- H01 - BASIC ELECTRIC ELEMENTS

Hiroyuki Matsunami

Person

Patents Grantslast 30 patents

Silicon carbide semiconductor device

Lateral junction field effect transistor and method of manufacturin...

Lateral junction field effect transistor and method of manufacturin...

Method of growing semiconductor crystal

Field effect transistor and method for manufacturing same

Lateral junction field-effect transistor

Lateral junction field effect transistor and method of manufacturin...

Field effect transistor

Diboride single crystal substrate, semiconductor device using this...

Method for manufacturing semiconductor device having trench in sili...

Lateral junction field effect transistor and method of manufacturin...

Lateral junction field-effect transistor

Pinch-off type vertical junction field effect transistor and method...

Silicon carbide semiconductor device

SiC wafer, SiC semiconductor device, and production method of SiC w...

Sic single crystal and method for growing the same

Patents Applicationslast 30 patents

LATERAL JUNCTION FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURIN...

4H-POLYTYPE GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICE ON A 4H-POLY...

Lateral Junction Field Effect Transistor and Method of Manufacturin...

Susceptor

Lateral junction field effect transistor and method of manufacturin...

Field effect transistor and method for manufacturing same

Method of growing semiconductor crystal

Lateral junction field-effect transistor

Field effect transistor

Diboride single crystal substrate, semiconductor device using this...

Method for manufacturing semiconductor device having trench in sili...

4H-polytype gallium nitride-based semiconductor device on a 4H-poly...

Lateral junctiion field-effect transistor and its manufacturing method

Silicon carbide semiconductor device

Lateral junction type field effect transistor