Hiroyuki Nihira

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Ayase, JP

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Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating bipolar transistor using self-aligned polysil...
- Patent number 5,244,822
- Issue date Sep 14, 1993
- Kabushiki Kaisha Toshiba
- Hiroyuki Nihira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 5,204,276
- Issue date Apr 20, 1993
- Kabushiki Kaisha Toshiba
- Hiroomi Nakajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing bipolar transistor
- Patent number 5,100,813
- Issue date Mar 31, 1992
- Kabushiki Kaisha Toshiba
- Hiroyuki Nihira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating bipolar transistor using self-aligned polysil...
- Patent number 5,096,842
- Issue date Mar 17, 1992
- Kabushiki Kaisha Toshiba
- Hiroyuki Nihira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device having trench isolation
- Patent number 4,931,409
- Issue date Jun 5, 1990
- Kabushiki Kaisha Toshiba
- Hiroomi Nakajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing bipolar transistor
- Patent number 4,908,324
- Issue date Mar 13, 1990
- Kabushiki Kaisha Toshiba
- Hiroyuki Nihira
- H01 - BASIC ELECTRIC ELEMENTS