Hiroyuki Ogawa

Person

Yokkaichi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Transistor circuits including fringeless transistors and method of...
- Patent number 12,094,944
- Issue date Sep 17, 2024
- SanDisk Technologies LLC
- Dai Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor circuits including fringeless transistors and method of...
- Patent number 12,027,520
- Issue date Jul 2, 2024
- SanDisk Technologies LLC
- Akihiro Yuu
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device with separated contact regions and...
- Patent number 11,996,153
- Issue date May 28, 2024
- SanDisk Technologies LLC
- James Kai
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device with off-center or reverse slope st...
- Patent number 11,991,881
- Issue date May 21, 2024
- SanDisk Technologies LLC
- Hiroyuki Tanaka
Information Patent Grant
Three-dimensional memory device including sense amplifiers having a...
- Patent number 11,925,027
- Issue date Mar 5, 2024
- SanDisk Technologies LLC
- Takuma Takimoto
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device with separated source-side lines an...
- Patent number 11,889,684
- Issue date Jan 30, 2024
- SanDisk Technologies LLC
- Masanori Tsutsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with separated contact regions and...
- Patent number 11,889,694
- Issue date Jan 30, 2024
- SanDisk Technologies LLC
- Hardwell Chibvongodze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with reduced gate fringe area and method o...
- Patent number 11,876,096
- Issue date Jan 16, 2024
- SanDisk Technologies LLC
- Takahito Fujita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor circuits including fringeless transistors and method of...
- Patent number 11,837,601
- Issue date Dec 5, 2023
- SanDisk Technologies LLC
- Jun Akaiwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with separated contact regions and...
- Patent number 11,792,988
- Issue date Oct 17, 2023
- SanDisk Technologies LLC
- Hiroyuki Ogawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Field effect transistors with reduced gate fringe area and method o...
- Patent number 11,710,740
- Issue date Jul 25, 2023
- SanDisk Technologies LLC
- Takahito Fujita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate material-based capacitor and resistor structures and methods o...
- Patent number 11,626,397
- Issue date Apr 11, 2023
- SanDisk Technologies LLC
- Hokuto Kodate
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing a shared word line drive...
- Patent number 11,501,821
- Issue date Nov 15, 2022
- SanDisk Technologies LLC
- Hiroyuki Ogawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device and method of erasing thereof from...
- Patent number 11,501,835
- Issue date Nov 15, 2022
- SanDisk Technologies LLC
- Shinsuke Yada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with separated source-side lines an...
- Patent number 11,393,836
- Issue date Jul 19, 2022
- SanDisk Technologies LLC
- Masanori Tsutsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing a shared word line drive...
- Patent number 11,322,483
- Issue date May 3, 2022
- SanDisk Technologies LLC
- Hiroyuki Ogawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate material-based capacitor and resistor structures and methods o...
- Patent number 11,322,597
- Issue date May 3, 2022
- SanDisk Technologies LLC
- Hokuto Kodate
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Static random access memory cell employing n-doped PFET gate electr...
- Patent number 11,088,152
- Issue date Aug 10, 2021
- SanDisk Technologies LLC
- Hiroshi Nakatsuji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable die size memory device and methods of manufacturing the same
- Patent number 11,069,707
- Issue date Jul 20, 2021
- SanDisk Technologies LLC
- Tomoka Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Word line decoder circuitry under a three-dimensional memory array
- Patent number 10,991,429
- Issue date Apr 27, 2021
- SanDisk Technologies LLC
- Hiroyuki Ogawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transparent antenna and transparent antenna-attached display device
- Patent number 10,910,718
- Issue date Feb 2, 2021
- SHARP KABUSHIKI KAISHA
- Yuhji Yashiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing compact bit line switch...
- Patent number 10,910,020
- Issue date Feb 2, 2021
- SanDisk Technologies LLC
- Hokuto Kodate
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device including stepped connection plates...
- Patent number 10,903,237
- Issue date Jan 26, 2021
- SanDisk Technologies LLC
- Naohiro Hosoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with horizontal silicon channels an...
- Patent number 10,833,101
- Issue date Nov 10, 2020
- SanDisk Technologies LLC
- Shigeki Shimomura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing bidirectional taper stai...
- Patent number 10,804,284
- Issue date Oct 13, 2020
- SanDisk Technologies LLC
- Yasushi Ishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS devices containing asymmetric contact via structures
- Patent number 10,770,459
- Issue date Sep 8, 2020
- SanDisk Technologies LLC
- Dai Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-tier three-dimensional memory devices containing annular diel...
- Patent number 10,748,919
- Issue date Aug 18, 2020
- SANDISK TECHNOLOGY LLC
- Dai Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Word line decoder circuitry under a three-dimensional memory array
- Patent number 10,720,213
- Issue date Jul 21, 2020
- SanDisk Technologies LLC
- Hiroyuki Ogawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Static random access memory cell employing n-doped PFET gate electr...
- Patent number 10,714,486
- Issue date Jul 14, 2020
- SanDisk Technologies LLC
- Hiroshi Nakatsuji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Display device with position inputting function
- Patent number 10,564,460
- Issue date Feb 18, 2020
- SHARP KABUSHIKI KAISHA
- Kenshi Tada
- G06 - COMPUTING CALCULATING COUNTING

Patents Applicationslast 30 patents

Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING INTEGRATED CONTACT-AND-S...
- Publication number 20240213145
- Publication date Jun 27, 2024
- SANDISK TECHNOLOGIES LLC
- Masato MIYAMOTO
- G11 - INFORMATION STORAGE
Information Patent Application
X-DIRECTION DIVIDED SUB-BLOCK MODE IN NAND
- Publication number 20240212755
- Publication date Jun 27, 2024
- SANDISK TECHNOLOGIES LLC
- Naohiro Hosoda
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES WITH LATERAL BLOCK ISOLATION STRUC...
- Publication number 20240196612
- Publication date Jun 13, 2024
- SANDISK TECHNOLOGIES LLC
- Akihiro TOBIOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES WITH LATERAL BLOCK ISOLATION STRUC...
- Publication number 20240194262
- Publication date Jun 13, 2024
- SANDISK TECHNOLOGIES LLC
- Takayuki MAEKURA
- G11 - INFORMATION STORAGE
Information Patent Application
STAIRLESS THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THER...
- Publication number 20240179906
- Publication date May 30, 2024
- SANDISK TECHNOLOGIES LLC
- Naohiro HOSODA
Information Patent Application
STAIRLESS THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THER...
- Publication number 20240179905
- Publication date May 30, 2024
- SANDISK TECHNOLOGIES LLC
- Takayuki MAEKURA
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING DOPED SOURCE-CHANNEL INT...
- Publication number 20240147723
- Publication date May 2, 2024
- SANDISK TECHNOLOGIES LLC
- Motoo OHAGA
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR WAFER CONFIGURED FOR SINGLE TOUCH-DOWN TESTING
- Publication number 20240125846
- Publication date Apr 18, 2024
- SANDISK TECHNOLOGIES LLC
- Toru Miwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WAFER CONFIGURED FOR SINGLE TOUCH-DOWN TESTING
- Publication number 20240128132
- Publication date Apr 18, 2024
- SANDISK TECHNOLOGIES LLC
- Toru Miwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WAFER CONFIGURED FOR SINGLE TOUCH-DOWN TESTING
- Publication number 20240128134
- Publication date Apr 18, 2024
- SANDISK TECHNOLOGIES LLC
- Toru Miwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING MEMORY OPENING MONITORIN...
- Publication number 20240107758
- Publication date Mar 28, 2024
- SANDISK TECHNOLOGIES LLC
- Hiroyuki OGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY ARRAY WITH DUAL-LEVEL PERIPHERAL CIRCUITS...
- Publication number 20240032299
- Publication date Jan 25, 2024
- SANDISK TECHNOLOGIES LLC
- Masanori TSUTSUMI
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING SENSE AMPLIFIERS HAVING A...
- Publication number 20230209832
- Publication date Jun 29, 2023
- SANDISK TECHNOLOGIES LLC
- Takuma TAKIMOTO
- G11 - INFORMATION STORAGE
Information Patent Application
FIELD EFFECT TRANSISTORS WITH REDUCED GATE FRINGE AREA AND METHOD O...
- Publication number 20230111003
- Publication date Apr 13, 2023
- SANDISK TECHNOLOGIES LLC
- Takahito FUJITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS WITH REDUCED GATE FRINGE AREA AND METHOD O...
- Publication number 20230112262
- Publication date Apr 13, 2023
- SANDISK TECHNOLOGIES LLC
- Takahito FUJITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS WITH REDUCED GATE FRINGE AREA AND METHOD O...
- Publication number 20230111724
- Publication date Apr 13, 2023
- SANDISK TECHNOLOGIES LLC
- Takahito FUJITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SEPARATED CONTACT REGIONS AND...
- Publication number 20230041950
- Publication date Feb 9, 2023
- SANDISK TECHNOLOGIES LLC
- Hardwell Chibvongodze
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SEPARATED CONTACT REGIONS AND...
- Publication number 20230038557
- Publication date Feb 9, 2023
- SANDISK TECHNOLOGIES LLC
- Hiroyuki Ogawa
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SEPARATED CONTACT REGIONS AND...
- Publication number 20230045001
- Publication date Feb 9, 2023
- SANDISK TECHNOLOGIES LLC
- Hiroyuki Ogawa
- G11 - INFORMATION STORAGE
Information Patent Application
TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF...
- Publication number 20220367449
- Publication date Nov 17, 2022
- SANDISK TECHNOLOGIES LLC
- Akihiro YUU
- G11 - INFORMATION STORAGE
Information Patent Application
TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF...
- Publication number 20220359690
- Publication date Nov 10, 2022
- SANDISK TECHNOLOGIES LLC
- Dai IWATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF...
- Publication number 20220359501
- Publication date Nov 10, 2022
- SANDISK TECHNOLOGIES LLC
- Jun Akaiwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH OFF-CENTER OR REVERSE SLOPE ST...
- Publication number 20220328512
- Publication date Oct 13, 2022
- SANDISK TECHNOLOGIES LLC
- Hiroyuki TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH METAL-INSULATOR-SEMICOND...
- Publication number 20220278209
- Publication date Sep 1, 2022
- SANDISK TECHNOLOGIES LLC
- Teruyuki MINE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF ERASING THEREOF FROM...
- Publication number 20220238162
- Publication date Jul 28, 2022
- SANDISK TECHNOLOGIES LLC
- Shinsuke YADA
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SEPARATED SOURCE-SIDE LINES AN...
- Publication number 20220157841
- Publication date May 19, 2022
- SANDISK TECHNOLOGIES LLC
- Masanori TSUTSUMI
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SEPARATED SOURCE-SIDE LINES AN...
- Publication number 20220157842
- Publication date May 19, 2022
- SANDISK TECHNOLOGIES LLC
- Masanori TSUTSUMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING A SHARED WORD LINE DRIVE...
- Publication number 20220139878
- Publication date May 5, 2022
- SANDISK TECHNOLOGIES LLC
- Hiroyuki OGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING A SHARED WORD LINE DRIVE...
- Publication number 20220139441
- Publication date May 5, 2022
- SANDISK TECHNOLOGIES LLC
- Hiroyuki OGAWA
- G11 - INFORMATION STORAGE
Information Patent Application
GATE MATERIAL-BASED CAPACITOR AND RESISTOR STRUCTURES AND METHODS O...
- Publication number 20220068915
- Publication date Mar 3, 2022
- SANDISK TECHNOLOGIES LLC
- Hokuto KODATE
- H01 - BASIC ELECTRIC ELEMENTS

Hiroyuki Ogawa

Person

Patents Grantslast 30 patents

Transistor circuits including fringeless transistors and method of...

Transistor circuits including fringeless transistors and method of...

Three-dimensional memory device with separated contact regions and...

Three-dimensional memory device with off-center or reverse slope st...

Three-dimensional memory device including sense amplifiers having a...

Three-dimensional memory device with separated source-side lines an...

Three-dimensional memory device with separated contact regions and...

Field effect transistors with reduced gate fringe area and method o...

Transistor circuits including fringeless transistors and method of...

Three-dimensional memory device with separated contact regions and...

Field effect transistors with reduced gate fringe area and method o...

Gate material-based capacitor and resistor structures and methods o...

Three-dimensional memory device containing a shared word line drive...

Three-dimensional memory device and method of erasing thereof from...

Three-dimensional memory device with separated source-side lines an...

Three-dimensional memory device containing a shared word line drive...

Gate material-based capacitor and resistor structures and methods o...

Static random access memory cell employing n-doped PFET gate electr...

Variable die size memory device and methods of manufacturing the same

Word line decoder circuitry under a three-dimensional memory array

Transparent antenna and transparent antenna-attached display device

Three-dimensional memory device containing compact bit line switch...

Three-dimensional memory device including stepped connection plates...

Three-dimensional memory device with horizontal silicon channels an...

Three-dimensional memory device containing bidirectional taper stai...

CMOS devices containing asymmetric contact via structures

Multi-tier three-dimensional memory devices containing annular diel...

Word line decoder circuitry under a three-dimensional memory array

Static random access memory cell employing n-doped PFET gate electr...

Display device with position inputting function

Patents Applicationslast 30 patents

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING INTEGRATED CONTACT-AND-S...

X-DIRECTION DIVIDED SUB-BLOCK MODE IN NAND

THREE-DIMENSIONAL MEMORY DEVICES WITH LATERAL BLOCK ISOLATION STRUC...

THREE-DIMENSIONAL MEMORY DEVICES WITH LATERAL BLOCK ISOLATION STRUC...

STAIRLESS THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THER...

STAIRLESS THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THER...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING DOPED SOURCE-CHANNEL INT...

SEMICONDUCTOR WAFER CONFIGURED FOR SINGLE TOUCH-DOWN TESTING

SEMICONDUCTOR WAFER CONFIGURED FOR SINGLE TOUCH-DOWN TESTING

SEMICONDUCTOR WAFER CONFIGURED FOR SINGLE TOUCH-DOWN TESTING

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING MEMORY OPENING MONITORIN...

THREE-DIMENSIONAL MEMORY ARRAY WITH DUAL-LEVEL PERIPHERAL CIRCUITS...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING SENSE AMPLIFIERS HAVING A...

FIELD EFFECT TRANSISTORS WITH REDUCED GATE FRINGE AREA AND METHOD O...

FIELD EFFECT TRANSISTORS WITH REDUCED GATE FRINGE AREA AND METHOD O...

FIELD EFFECT TRANSISTORS WITH REDUCED GATE FRINGE AREA AND METHOD O...

THREE-DIMENSIONAL MEMORY DEVICE WITH SEPARATED CONTACT REGIONS AND...

THREE-DIMENSIONAL MEMORY DEVICE WITH SEPARATED CONTACT REGIONS AND...

THREE-DIMENSIONAL MEMORY DEVICE WITH SEPARATED CONTACT REGIONS AND...

TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF...

TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF...

TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF...

THREE-DIMENSIONAL MEMORY DEVICE WITH OFF-CENTER OR REVERSE SLOPE ST...

HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH METAL-INSULATOR-SEMICOND...

THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF ERASING THEREOF FROM...

THREE-DIMENSIONAL MEMORY DEVICE WITH SEPARATED SOURCE-SIDE LINES AN...

THREE-DIMENSIONAL MEMORY DEVICE WITH SEPARATED SOURCE-SIDE LINES AN...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING A SHARED WORD LINE DRIVE...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING A SHARED WORD LINE DRIVE...

GATE MATERIAL-BASED CAPACITOR AND RESISTOR STRUCTURES AND METHODS O...