Hiroyuki Sugaya

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 7,714,385
- Issue date May 11, 2010
- Kabushiki Kaisha Toshiba
- Kenichi Tokano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with cavity and method of manufacture thereof
- Patent number 7,253,479
- Issue date Aug 7, 2007
- Kabushiki Kaisha Toshiba
- Hiroyuki Sugaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device and semiconductor device
- Patent number 6,258,686
- Issue date Jul 10, 2001
- Kabushiki Kaisha Toshiba
- Hiroyuki Sugaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming selective epitaxial film
- Patent number 5,963,822
- Issue date Oct 5, 1999
- Kabushiki Kaisha Toshiba
- Hidenori Saihara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing semiconductor devices with a reverse tapere...
- Patent number 5,926,725
- Issue date Jul 20, 1999
- Kabushiki Kaisha Toshiba
- Hidenori Saihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial-base bipolar transistor
- Patent number 5,877,540
- Issue date Mar 2, 1999
- Kabushiki Kaisha Toshiba
- Hiroshi Naruse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 5,864,180
- Issue date Jan 26, 1999
- Kabushiki Kaisha Toshiba
- Shizue Hori
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20110169081
- Publication date Jul 14, 2011
- Kabushiki Kaisha Toshiba
- Hironori Ishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20070148931
- Publication date Jun 28, 2007
- Kabushiki Kaisha Toshiba
- Kenichi Tokano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with cavity and method of manufacture thereof
- Publication number 20060194410
- Publication date Aug 31, 2006
- Hiroyuki Sugaya
- H01 - BASIC ELECTRIC ELEMENTS

Hiroyuki Sugaya

Person

Patents Grantslast 30 patents

Semiconductor device and method of fabricating the same

Semiconductor device with cavity and method of manufacture thereof

Manufacturing method of semiconductor device and semiconductor device

Method of forming selective epitaxial film

Method of manufacturing semiconductor devices with a reverse tapere...

Epitaxial-base bipolar transistor

Semiconductor device and method for manufacturing the same

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Semiconductor device with cavity and method of manufacture thereof