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Hisanori Fujita
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Ushiku, JP
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last 30 patents
Information
Patent Grant
Epitaxial wafer of gallium arsenide phosphide
Patent number
5,456,765
Issue date
Oct 10, 1995
Mitsubishi Kasei Corporation
Tadashige Sato
C30 - CRYSTAL GROWTH
Information
Patent Grant
Epitaxial wafer and process for producing the same
Patent number
5,445,897
Issue date
Aug 29, 1995
Mitsubishi Kasei Polytec Company
Tadashige Satoh
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Double hetero type epitaxial wafer with refractive indices
Patent number
5,103,270
Issue date
Apr 7, 1992
Mitsubishi Monsanto Chemical Company
Tadashige Sato
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of making a gallium arsenide phosphide-, mixed crystal-epita...
Patent number
4,968,642
Issue date
Nov 6, 1990
Mitsubishi Chemical Industries, Ltd.
Hisanori Fujita
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Gallium arsenide phosphide mixed crystal epitaxial wafer with a gra...
Patent number
4,865,655
Issue date
Sep 12, 1989
Mitsubishi Monsanto Chemical Co., Ltd.
Hisanori Fujita
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Growth method of an organic compound single crystal and a boat used...
Patent number
4,865,682
Issue date
Sep 12, 1989
Mitsubishi Monsanto Chemical Co., Ltd.
Takeshi Okano
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method for vapor-phase epitaxial growth of a single crystalline-, g...
Patent number
4,756,792
Issue date
Jul 12, 1988
Mitsubishi Monsanto Chemical Co., Ltd.
Hisanori Fujita
C30 - CRYSTAL GROWTH
Information
Patent Grant
Liquid-phase epitaxial growth method of a IIIb-Vb group compound
Patent number
4,609,411
Issue date
Sep 2, 1986
Mitsubishi Monsanto Chemical Co., Ltd.
Yasuji Kohashi
C30 - CRYSTAL GROWTH
Information
Patent Grant
Epitaxial wafer of compound semiconductor display device
Patent number
4,510,515
Issue date
Apr 9, 1985
Stanley Electric Co., Ltd.
Masaki Kajita
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for producing mixed crystal wafer using special temperature...
Patent number
4,378,259
Issue date
Mar 29, 1983
Mitsubishi Monsanto Chemical Co.
Shinichi Hasegawa
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Epitaxial wafer for use in production of light emitting diode
Patent number
4,252,576
Issue date
Feb 24, 1981
Mitsubishi Monsanto Chemical Co.
Shinichi Hasegawa
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of fabricating electroluminescent element utilizing multi-st...
Patent number
4,218,270
Issue date
Aug 19, 1980
Mitsubishi Monsanto Chemical Company
Shinichi Hasegawa
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of manufacturing electroluminescent compound semiconductor w...
Patent number
4,216,484
Issue date
Aug 5, 1980
Mitsubishi Monsanto Chemical Company
Shinichi Hasegawa
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Process for manufacturing a vapor phase epitaxial wafer of compound...
Patent number
4,168,998
Issue date
Sep 25, 1979
Mitsubishi Monsanto Chemical Co.
Shinichi Hasegawa
C30 - CRYSTAL GROWTH