Claims
- 1. An epitaxial wafer comprising:
- a GaAs or GaP single crystal substrate;
- a GaAs.sub.1-x P.sub.x fixed-composition layer that is crystally grown over said GaAs or GaP single crystal substrate; and
- a varied-composition region that is formed between said substrate and said fixed-composition layer, said varied-composition region comprising at least two varied-composition layer portions and at least one fixed-composition layer portion with a thickness of 1 .mu.m or more formed between said two varied-composition layer portions, at least one of said varied-composition layer portions being formed such that the rate of change in the composition .DELTA.x per .mu.m satisfies the following condition:
- about 0.02.ltoreq..DELTA.x.ltoreq.about 0.08
Priority Claims (1)
Number |
Date |
Country |
Kind |
1-303677 |
Nov 1989 |
JPX |
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Parent Case Info
This application is a continuation-in-part of application Ser. No. 07/616,266, filed Nov. 20, 1990 now abandoned.
US Referenced Citations (5)
Number |
Name |
Date |
Kind |
4007074 |
Ogirima et al. |
Feb 1977 |
|
4088515 |
Blakeslee et al. |
May 1978 |
|
4252576 |
Hasegawa et al. |
Feb 1981 |
|
4865655 |
Fujita et al. |
Sep 1989 |
|
5057442 |
Habuka |
Oct 1991 |
|
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
616266 |
Nov 1990 |
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