Hisashi Hasegawa

Person

Chiba-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,587,869
- Issue date Feb 21, 2023
- ABLIC INC.
- Hisashi Hasegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing a semiconductor de...
- Patent number 10,297,562
- Issue date May 21, 2019
- ABLIC INC.
- Kaku Igarashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor integrated circuit device
- Patent number 9,972,625
- Issue date May 15, 2018
- SII Semiconductor Corporation
- Hirofumi Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device having low and high withsta...
- Patent number 9,698,147
- Issue date Jul 4, 2017
- SII Semiconductor Corporation
- Hirofumi Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,570,537
- Issue date Feb 14, 2017
- SII Semiconductor Corporation
- Hisashi Hasegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,524,961
- Issue date Dec 20, 2016
- SII Semiconductor Corporation
- Masayuki Hashitani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,803,281
- Issue date Aug 12, 2014
- Seiko Instruments Inc.
- Hisashi Hasegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor formed on an insulating substrate and integ...
- Patent number 8,450,799
- Issue date May 28, 2013
- Seiko Instruments Inc.
- Yutaka Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 8,263,443
- Issue date Sep 11, 2012
- Seiko Instruments Inc.
- Hideo Yoshino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,129,820
- Issue date Mar 6, 2012
- Seiko Instruments Inc.
- Hideo Yoshino
- G01 - MEASURING TESTING
Information Patent Grant
Method of high voltage operation of field effect transistor
- Patent number 8,012,835
- Issue date Sep 6, 2011
- Seiko Instruments Inc.
- Yutaka Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET having SOI and method
- Patent number 7,851,858
- Issue date Dec 14, 2010
- Seiko Instruments Inc.
- Hideo Yoshino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of high voltage operation of a field effect transistor
- Patent number 7,816,212
- Issue date Oct 19, 2010
- Seiko Instruments Inc.
- Yutaka Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufacturing method with spin-coating of phot...
- Patent number 7,790,555
- Issue date Sep 7, 2010
- Seiko Instruments Inc.
- Akiko Tsukamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device
- Patent number 7,750,411
- Issue date Jul 6, 2010
- Seiko Instruments Inc.
- Hirofumi Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device to suppress leak current at an end of an isola...
- Patent number 7,566,934
- Issue date Jul 28, 2009
- Seiko Instruments Inc.
- Hisashi Hasegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage operating field effect transistor, bias circuit theref...
- Patent number 7,545,018
- Issue date Jun 9, 2009
- Seiko Instruments Inc.
- Yutaka Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 7,528,032
- Issue date May 5, 2009
- Seiko Instruments Inc.
- Hisashi Hasegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage operating field effect transistor, and bias circuit th...
- Patent number 7,432,568
- Issue date Oct 7, 2008
- Seiko Instruments Inc.
- Yutaka Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method therefore
- Patent number 7,375,001
- Issue date May 20, 2008
- Seiko Instruments Inc.
- Hisashi Hasegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor formed on an insulating substrate and integ...
- Patent number 7,282,763
- Issue date Oct 16, 2007
- Seiko Instruments Inc.
- Yutaka Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film memory, array, and operation method and manufacture metho...
- Patent number 7,211,867
- Issue date May 1, 2007
- Seiko Instruments Inc.
- Yutaka Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate transistor
- Patent number 7,190,032
- Issue date Mar 13, 2007
- Seiko Instruments Inc.
- Yutaka Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,002,235
- Issue date Feb 21, 2006
- Seiko Instruments Inc.
- Hisashi Hasegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of controlling insulated gate transistor
- Patent number 6,949,777
- Issue date Sep 27, 2005
- Seiko Instruments Inc.
- Yutaka Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary MOS semiconductor device
- Patent number 6,777,752
- Issue date Aug 17, 2004
- Seiko Instruments Inc.
- Jun Osanai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary MOS transistors having p-type gate electrodes
- Patent number 6,768,174
- Issue date Jul 27, 2004
- Seiko Instruments Inc.
- Hisashi Hasegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 6,613,625
- Issue date Sep 2, 2003
- Seiko Instruments Inc.
- Hisashi Hasegawa
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE WITH REFERENCE VOLTAGE CIRCUIT
- Publication number 20240094756
- Publication date Mar 21, 2024
- ABLIC Inc.
- Takeshi KOYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH REFERENCE VOLTAGE CIRCUIT
- Publication number 20220137658
- Publication date May 5, 2022
- ABLIC Inc.
- Takeshi KOYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20210134714
- Publication date May 6, 2021
- ABLIC Inc.
- Hisashi HASEGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20180269270
- Publication date Sep 20, 2018
- ABLIC Inc.
- Hisashi HASEGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DE...
- Publication number 20180269170
- Publication date Sep 20, 2018
- ABLIC Inc.
- Kaku IGARASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
- Publication number 20170256545
- Publication date Sep 7, 2017
- SII Semiconductor Corporation
- Hirofumi HARADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING...
- Publication number 20160247804
- Publication date Aug 25, 2016
- SII Semiconductor Corporation
- Hirofumi HARADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20160233207
- Publication date Aug 11, 2016
- SII Semiconductor Corporation
- Masayuki HASHITANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20140210042
- Publication date Jul 31, 2014
- Seiko Instruments Inc.
- Hisashi HASEGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20130082349
- Publication date Apr 4, 2013
- Hisashi HASEGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20110027949
- Publication date Feb 3, 2011
- Seiko Instruments Inc.
- Hideo YOSHINO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20100224933
- Publication date Sep 9, 2010
- Hisashi Hasegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20090283864
- Publication date Nov 19, 2009
- Hideo Yoshino
- G01 - MEASURING TESTING
Information Patent Application
Field effect transistor formed on an insulating substrate and integ...
- Publication number 20090101973
- Publication date Apr 23, 2009
- Yutaka Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High voltage operating field effect transistor, bias circuit theref...
- Publication number 20090014765
- Publication date Jan 15, 2009
- Yutaka Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High voltage operating field effect transistor, and bias circuit th...
- Publication number 20090014816
- Publication date Jan 15, 2009
- Yutaka Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20080012077
- Publication date Jan 17, 2008
- Hisashi Hasegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor integrated circuit device
- Publication number 20080006879
- Publication date Jan 10, 2008
- Hirofumi Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device manufacturing method and semiconductor device
- Publication number 20070272984
- Publication date Nov 29, 2007
- Akiko Tsukamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20070210382
- Publication date Sep 13, 2007
- Hideo Yoshino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor integrated circuit device and method of manufacturing...
- Publication number 20060176628
- Publication date Aug 10, 2006
- Hisashi Hasegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method therefore
- Publication number 20060035421
- Publication date Feb 16, 2006
- Hisashi Hasegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor integrated circuit device
- Publication number 20060022274
- Publication date Feb 2, 2006
- Hisashi Hasegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated gate transistor
- Publication number 20050194618
- Publication date Sep 8, 2005
- Yutaka Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High voltage operating field effect transistor, bias circuit theref...
- Publication number 20050184349
- Publication date Aug 25, 2005
- Yutaka Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High voltage operating field effect transistor, and bias circuit th...
- Publication number 20050184350
- Publication date Aug 25, 2005
- Yutaka Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing semiconductor device
- Publication number 20050074929
- Publication date Apr 7, 2005
- Hisashi Hasegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin film memory, array, and operation method and manufacture metho...
- Publication number 20050001269
- Publication date Jan 6, 2005
- Yutaka Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method therefore
- Publication number 20040026738
- Publication date Feb 12, 2004
- Hisashi Hasegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a semiconductor device
- Publication number 20040014275
- Publication date Jan 22, 2004
- Hisashi Hasegawa
- H01 - BASIC ELECTRIC ELEMENTS

Hisashi Hasegawa

Person

Patents Grantslast 30 patents

Semiconductor device and method of manufacturing the same

Semiconductor device and method of manufacturing a semiconductor de...

Method of manufacturing semiconductor integrated circuit device

Semiconductor integrated circuit device having low and high withsta...

Semiconductor device

Semiconductor device

Semiconductor device

Field effect transistor formed on an insulating substrate and integ...

Semiconductor device and method of manufacturing the same

Semiconductor device

Method of high voltage operation of field effect transistor

MOSFET having SOI and method

Method of high voltage operation of a field effect transistor

Semiconductor device manufacturing method with spin-coating of phot...

Semiconductor integrated circuit device

Semiconductor device to suppress leak current at an end of an isola...

High voltage operating field effect transistor, bias circuit theref...

Method for manufacturing semiconductor device

High voltage operating field effect transistor, and bias circuit th...

Semiconductor device and method therefore

Field effect transistor formed on an insulating substrate and integ...

Thin film memory, array, and operation method and manufacture metho...

Insulated gate transistor

Semiconductor device

Method of controlling insulated gate transistor

Complementary MOS semiconductor device

Complementary MOS transistors having p-type gate electrodes

Method of manufacturing a semiconductor device

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE WITH REFERENCE VOLTAGE CIRCUIT

SEMICONDUCTOR DEVICE WITH REFERENCE VOLTAGE CIRCUIT

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DE...

METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Semiconductor device

Semiconductor device

Field effect transistor formed on an insulating substrate and integ...

High voltage operating field effect transistor, bias circuit theref...

High voltage operating field effect transistor, and bias circuit th...

Semiconductor device

Semiconductor integrated circuit device

Semiconductor device manufacturing method and semiconductor device

Semiconductor device and method of manufacturing the same

Semiconductor integrated circuit device and method of manufacturing...

Semiconductor device and method therefore

Semiconductor integrated circuit device

Insulated gate transistor

High voltage operating field effect transistor, bias circuit theref...

High voltage operating field effect transistor, and bias circuit th...

Method for manufacturing semiconductor device

Thin film memory, array, and operation method and manufacture metho...

Semiconductor device and method therefore

Method of manufacturing a semiconductor device