Hisashi Takemura

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 7,611,934
- Issue date Nov 3, 2009
- NEC Corporation
- Risho Koh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI semiconductor device with improved halo region and manufacturin...
- Patent number 7,485,923
- Issue date Feb 3, 2009
- NEC Corporation
- Hisashi Takemura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET formed on a silicon-on-insulator substrate having a SOI laye...
- Patent number 7,247,910
- Issue date Jul 24, 2007
- NEC Corporation
- Jong Wook Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method that includes reverse tapering mult...
- Patent number 7,211,517
- Issue date May 1, 2007
- NEC Corporation
- Yukishige Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 6,975,001
- Issue date Dec 13, 2005
- NEC Corporation
- Risho Koh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI MOSFET
- Patent number 6,933,569
- Issue date Aug 23, 2005
- NEC Corporation
- Risho Koh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-emission type cold cathode and application thereof
- Patent number 6,351,059
- Issue date Feb 26, 2002
- NEC Corporation
- Hisashi Takemura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electric field emission cold cathode
- Patent number 6,084,341
- Issue date Jul 4, 2000
- NEC Corporation
- Hisashi Takemura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field emission cold cathode element
- Patent number 6,060,823
- Issue date May 9, 2000
- NEC Corporation
- Akihiko Okamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-emission cold cathode and method of manufacturing same
- Patent number 6,043,103
- Issue date Mar 28, 2000
- NEC Corporation
- Hisashi Takemura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field emission cold cathode having a serial resistance layer divide...
- Patent number 6,031,322
- Issue date Feb 29, 2000
- NEC Corporation
- Hisashi Takemura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of operating electron tube
- Patent number 6,024,618
- Issue date Feb 15, 2000
- NEC Corporation
- Hideo Makishima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field emission cold cathode having a cone-shaped emitter
- Patent number 6,018,215
- Issue date Jan 25, 2000
- NEC Corporation
- Hisashi Takemura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a cold cathode for field emission
- Patent number 5,924,903
- Issue date Jul 20, 1999
- NEC Corporation
- Hisashi Takemura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-emission cold cathode and manufacturing method for same
- Patent number 5,910,701
- Issue date Jun 8, 1999
- NEC Corporation
- Hisashi Takemura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-emitter electron gun of a field emission type capable of emit...
- Patent number 5,717,275
- Issue date Feb 10, 1998
- NEC Corporation
- Hisashi Takemura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field emission electron gun and method for fabricating the same
- Patent number 5,666,020
- Issue date Sep 9, 1997
- NEC Corporation
- Hisashi Takemura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable-capacitance device and semiconductor integrated circuit de...
- Patent number 5,627,402
- Issue date May 6, 1997
- NEC Corporation
- Hisashi Takemura
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Method for making a field-emission type electron gun
- Patent number 5,620,350
- Issue date Apr 15, 1997
- NEC Corporation
- Hisashi Takemura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming bipolar junction transistor of epitaxial planar type
- Patent number 5,587,326
- Issue date Dec 24, 1996
- NEC Corporation
- Hisashi Takemura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device
- Patent number 5,576,221
- Issue date Nov 19, 1996
- NEC Corporation
- Hisashi Takemura
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Variable-capacitance device and semiconductor integrated circuit de...
- Patent number 5,506,442
- Issue date Apr 9, 1996
- NEC Corporation
- Hisashi Takemura
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Method of manufacturing semiconductor integrated circuit device
- Patent number 5,397,731
- Issue date Mar 14, 1995
- NEC Corporation
- Hisashi Takemura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with a particular base and collector regions
- Patent number 5,374,846
- Issue date Dec 20, 1994
- NEC Corporation
- Hisashi Takemura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with insulating isolation groove
- Patent number 5,099,304
- Issue date Mar 24, 1992
- NEC Corporation
- Hisashi Takemura
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device and method of fabricating the same
- Publication number 20050250317
- Publication date Nov 10, 2005
- Risho Koh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and its manufacturing method
- Publication number 20050151172
- Publication date Jul 14, 2005
- Hisashi Takemura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and it's manufacturing method
- Publication number 20050098831
- Publication date May 12, 2005
- Jong Wook Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20040209438
- Publication date Oct 21, 2004
- Yukishige Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for manufacturing the same
- Publication number 20040129975
- Publication date Jul 8, 2004
- NEC Corporation
- Risho Koh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of fabricating the same
- Publication number 20020185687
- Publication date Dec 12, 2002
- NEC Corporation
- Risho Koh
- H01 - BASIC ELECTRIC ELEMENTS

Hisashi Takemura

Person

Patents Grantslast 30 patents

Semiconductor device and method of fabricating the same

SOI semiconductor device with improved halo region and manufacturin...

MOSFET formed on a silicon-on-insulator substrate having a SOI laye...

Semiconductor device and method that includes reverse tapering mult...

Semiconductor device and method of fabricating the same

SOI MOSFET

Field-emission type cold cathode and application thereof

Electric field emission cold cathode

Field emission cold cathode element

Field-emission cold cathode and method of manufacturing same

Field emission cold cathode having a serial resistance layer divide...

Method of operating electron tube

Field emission cold cathode having a cone-shaped emitter

Method of fabricating a cold cathode for field emission

Field-emission cold cathode and manufacturing method for same

Multi-emitter electron gun of a field emission type capable of emit...

Field emission electron gun and method for fabricating the same

Variable-capacitance device and semiconductor integrated circuit de...

Method for making a field-emission type electron gun

Method of forming bipolar junction transistor of epitaxial planar type

Manufacturing method of semiconductor device

Variable-capacitance device and semiconductor integrated circuit de...

Method of manufacturing semiconductor integrated circuit device

Bipolar transistor with a particular base and collector regions

Semiconductor device with insulating isolation groove

Patents Applicationslast 30 patents

Semiconductor device and method of fabricating the same

Semiconductor device and its manufacturing method

Semiconductor device and it's manufacturing method

Semiconductor device and method of manufacturing the same

Semiconductor device and method for manufacturing the same

Semiconductor device and method of fabricating the same