Hitoshi Wakabayashi

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having curved gate electrode aligned with curv...
- Patent number 10,854,751
- Issue date Dec 1, 2020
- Sony Corporation
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having curved gate electrode aligned with curv...
- Patent number 10,535,769
- Issue date Jan 14, 2020
- Sony Corporation
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having curved gate electrode aligned with curv...
- Patent number 10,269,961
- Issue date Apr 23, 2019
- Sony Corporation
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having curved gate electrode aligned with curv...
- Patent number 9,947,790
- Issue date Apr 17, 2018
- Sony Corporation
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having curved gate electrode aligned with curv...
- Patent number 9,601,622
- Issue date Mar 21, 2017
- Sony Corporation
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having curved gate electrode aligned with curv...
- Patent number 9,337,305
- Issue date May 10, 2016
- Sony Corporation
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a stress-inducing layer between channel...
- Patent number 9,153,663
- Issue date Oct 6, 2015
- Sony Corporation
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with field effect transistor and manufacturing...
- Patent number 8,384,167
- Issue date Feb 26, 2013
- Sony Corporation
- Yoshiaki Kikuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 7,830,703
- Issue date Nov 9, 2010
- NEC Corporation
- Koichi Takeda
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 7,723,808
- Issue date May 25, 2010
- NEC Corporation
- Yoshifumi Okuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fin-type field effect transistor and manu...
- Patent number 7,719,043
- Issue date May 18, 2010
- NEC Corporation
- Shigeharu Yamagami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 7,701,018
- Issue date Apr 20, 2010
- NEC Corporation
- Shigeharu Yamagami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a conductive portion below an interlaye...
- Patent number 7,612,416
- Issue date Nov 3, 2009
- NEC Corporation
- Kiyoshi Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI MOSFET
- Patent number 6,933,569
- Issue date Aug 23, 2005
- NEC Corporation
- Risho Koh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 6,916,695
- Issue date Jul 12, 2005
- NEC Corporation
- Hitoshi Wakabayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 6,483,151
- Issue date Nov 19, 2002
- NEC Corporation
- Hitoshi Wakabayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device capable of flattening...
- Patent number 6,121,120
- Issue date Sep 19, 2000
- NEC Corporation
- Hitoshi Wakabayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device having refractory metal...
- Patent number 5,593,923
- Issue date Jan 14, 1997
- NEC Corporation
- Tadahiko Horiuchi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE HAVING CURVED GATE ELECTRODE ALIGNED WITH CURV...
- Publication number 20200119194
- Publication date Apr 16, 2020
- SONY CORPORATION
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING CURVED GATE ELECTRODE ALIGNED WITH CURV...
- Publication number 20190207029
- Publication date Jul 4, 2019
- SONY CORPORATION
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING CURVED GATE ELECTRODE ALIGNED WITH CURV...
- Publication number 20180190820
- Publication date Jul 5, 2018
- SONY CORPORATION
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING CURVED GATE ELECTRODE ALIGNED WITH CURV...
- Publication number 20170148915
- Publication date May 25, 2017
- SONY CORPORATION
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING CURVED GATE ELECTRODE ALIGNED WITH CURV...
- Publication number 20160218213
- Publication date Jul 28, 2016
- SONY CORPORATION
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A STRESS-INTRODUCING LAYER BETWEEN CHAN...
- Publication number 20150340499
- Publication date Nov 26, 2015
- SONY CORPORATION
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20110042758
- Publication date Feb 24, 2011
- SONY CORPORATION
- Yoshiaki Kikuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20100314694
- Publication date Dec 16, 2010
- SONY CORPORATION
- Satoru Mayuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacturing Semiconductor Device
- Publication number 20090026504
- Publication date Jan 29, 2009
- Yoshifumi Okuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Substrate for field effect transistor, field effect transistor and...
- Publication number 20090014795
- Publication date Jan 15, 2009
- Risho Koh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method for Manufacturing Same
- Publication number 20080251849
- Publication date Oct 16, 2008
- Shigeharu Yamagami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device And Manufacturing Method Thereof
- Publication number 20080079077
- Publication date Apr 3, 2008
- NEC Corporation
- Koichi Takeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method for Production Thereof
- Publication number 20080029821
- Publication date Feb 7, 2008
- NEC Corporation
- Shigeharu Yamagami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method for Manufacturing the Same
- Publication number 20070257277
- Publication date Nov 8, 2007
- NEC Corporation
- Koichi Takeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having fin-type effect transistor
- Publication number 20070187682
- Publication date Aug 16, 2007
- NEC Corporation
- Kiyoshi Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for producing the same
- Publication number 20070132009
- Publication date Jun 14, 2007
- Kiyoshi Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing process therefor
- Publication number 20070075372
- Publication date Apr 5, 2007
- NEC Corporation
- Koichi Terashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for manufacturing the same
- Publication number 20040129975
- Publication date Jul 8, 2004
- NEC Corporation
- Risho Koh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20020179975
- Publication date Dec 5, 2002
- Hitoshi Wakabayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20010015463
- Publication date Aug 23, 2001
- NEC Corporation
- Hitoshi Wakabayashi
- H01 - BASIC ELECTRIC ELEMENTS

Hitoshi Wakabayashi

Person

Patents Grantslast 30 patents

Semiconductor device having curved gate electrode aligned with curv...

Semiconductor device having curved gate electrode aligned with curv...

Semiconductor device having curved gate electrode aligned with curv...

Semiconductor device having curved gate electrode aligned with curv...

Semiconductor device having curved gate electrode aligned with curv...

Semiconductor device having curved gate electrode aligned with curv...

Semiconductor device having a stress-inducing layer between channel...

Semiconductor device with field effect transistor and manufacturing...

Semiconductor device and manufacturing method thereof

Semiconductor device and method of manufacturing semiconductor device

Semiconductor device with fin-type field effect transistor and manu...

Semiconductor device and method for manufacturing same

Semiconductor device having a conductive portion below an interlaye...

SOI MOSFET

Semiconductor device and method of manufacturing the same

Semiconductor device and method of manufacturing the same

Method for manufacturing semiconductor device capable of flattening...

Method of fabricating semiconductor device having refractory metal...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE HAVING CURVED GATE ELECTRODE ALIGNED WITH CURV...

SEMICONDUCTOR DEVICE HAVING CURVED GATE ELECTRODE ALIGNED WITH CURV...

SEMICONDUCTOR DEVICE HAVING CURVED GATE ELECTRODE ALIGNED WITH CURV...

SEMICONDUCTOR DEVICE HAVING CURVED GATE ELECTRODE ALIGNED WITH CURV...

SEMICONDUCTOR DEVICE HAVING CURVED GATE ELECTRODE ALIGNED WITH CURV...

SEMICONDUCTOR DEVICE HAVING A STRESS-INTRODUCING LAYER BETWEEN CHAN...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Semiconductor Device and Method of Manufacturing Semiconductor Device

Substrate for field effect transistor, field effect transistor and...

Semiconductor Device and Method for Manufacturing Same

Semiconductor Device And Manufacturing Method Thereof

Semiconductor Device and Method for Production Thereof

Semiconductor Device and Method for Manufacturing the Same

Semiconductor device having fin-type effect transistor

Semiconductor device and method for producing the same

Semiconductor device and manufacturing process therefor

Semiconductor device and method for manufacturing the same

Semiconductor device and method of manufacturing the same

Semiconductor device and method of manufacturing the same