Hon-Sum Phillip Wong

Person

Yorktown Heights, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating self-aligned nanotube field effect transistor
- Patent number 8,637,374
- Issue date Jan 28, 2014
- International Business Machines Corporation
- Joerg Appenzeller
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Field-enhanced programmable resistance memory cell
- Patent number 8,377,789
- Issue date Feb 19, 2013
- International Business Machines Corporation
- Gerhard Ingmar Meijer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned nanotube field effect transistor
- Patent number 8,138,491
- Issue date Mar 20, 2012
- International Business Machines Corporation
- Joerg Appenzeller
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Self-aligned process for nanotube/nanowire FETs
- Patent number 8,119,466
- Issue date Feb 21, 2012
- International Business Machines Corporation
- Phaedon Avouris
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Self-aligned process for nanotube/nanowire FETs
- Patent number 8,003,453
- Issue date Aug 23, 2011
- International Business Machines Corporation
- Phaedon Avouris
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Phase change tip storage cell
- Patent number 7,928,420
- Issue date Apr 19, 2011
- International Business Machines Corporation
- David V. Horak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned nanotube field effect transistor
- Patent number 7,897,960
- Issue date Mar 1, 2011
- International Business Machines Corporation
- Joerg Appenzeller
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of making integrated circuit (IC) including at least one sto...
- Patent number 7,795,068
- Issue date Sep 14, 2010
- International Business Machines Corporation
- David V. Horak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-enhanced programmable resistance memory cell
- Patent number 7,791,141
- Issue date Sep 7, 2010
- International Business Machines Corporation
- Gerhard Ingmar Meijer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having gates and active regions forming a regula...
- Patent number 7,791,110
- Issue date Sep 7, 2010
- International Business Machines Corporation
- Leland Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical nanotube field effect transistor
- Patent number 7,635,856
- Issue date Dec 22, 2009
- International Business Machines Corporation
- Joerg Appenzeller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned process for nanotube/nanowire FETs
- Patent number 7,598,516
- Issue date Oct 6, 2009
- International Business Machines Corporation
- Phaedon Avouris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-bit phase change memory cell and multi-bit phase change memor...
- Patent number 7,485,891
- Issue date Feb 3, 2009
- International Business Machines Corporation
- Hendrik F. Hamann
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit having gates and active regions forming a regula...
- Patent number 7,465,973
- Issue date Dec 16, 2008
- International Business Machines Corporation
- Leland Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having gates and active regions forming a regula...
- Patent number 7,402,848
- Issue date Jul 22, 2008
- International Business Machines Corporation
- Leland Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Connection device with actuating element for changing a conductive...
- Patent number 7,342,301
- Issue date Mar 11, 2008
- International Business Machines Corporation
- David J. Frank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile content addressable memory using phase-change-material...
- Patent number 7,319,608
- Issue date Jan 15, 2008
- International Business Machines Corporation
- Louis L. C. Hsu
- G11 - INFORMATION STORAGE
Information Patent Grant
Self-aligned nanotube field effect transistor and method of fabrica...
- Patent number 7,253,065
- Issue date Aug 7, 2007
- International Business Machines Corporation
- Joerg Appenzeller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing device substrate with metal back-gate and...
- Patent number 7,145,212
- Issue date Dec 5, 2006
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit and method of controlling integrated circuit power consumpt...
- Patent number 7,106,096
- Issue date Sep 12, 2006
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned double gate mosfet with separate gates
- Patent number 7,101,762
- Issue date Sep 5, 2006
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a connection device
- Patent number 7,074,707
- Issue date Jul 11, 2006
- International Business Machines Corporation
- David J. Frank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field emission phase change diode memory
- Patent number 7,057,923
- Issue date Jun 6, 2006
- International Buisness Machines Corp.
- Stephen S. Furkay
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory cell on silicon-on insulator substrate
- Patent number 7,005,665
- Issue date Feb 28, 2006
- International Business Machines Corporation
- Stephen S. Furkay
- G11 - INFORMATION STORAGE
Information Patent Grant
Image capture system for mobile communications
- Patent number 6,985,169
- Issue date Jan 10, 2006
- Lenovo (Singapore) Pte. Ltd.
- Zhong John Deng
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Self-aligned gate MOSFET with separate gates
- Patent number 6,982,460
- Issue date Jan 3, 2006
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double-gate fet with planarized surfaces and self-aligned silicides
- Patent number 6,967,377
- Issue date Nov 22, 2005
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned nanotube field effect transistor and method of fabrica...
- Patent number 6,891,227
- Issue date May 10, 2005
- International Business Machines Corporation
- Joerg Appenzeller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium field effect transistor and method of fabricating the same
- Patent number 6,864,520
- Issue date Mar 8, 2005
- International Business Machines Corporation
- Massimo V. Fischetti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing device substrate with metal back-gate and...
- Patent number 6,797,604
- Issue date Sep 28, 2004
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Self-Aligned Nanotube Field Effect Transistor and Method of Fabrica...
- Publication number 20120142158
- Publication date Jun 7, 2012
- JOERG APPENZELLER
- B82 - NANO-TECHNOLOGY
Information Patent Application
SELF-ALIGNED PROCESS FOR NANOTUBE/NANOWIRE FETs
- Publication number 20110256675
- Publication date Oct 20, 2011
- International Business Machines Corporation
- Phaedon Avouris
- B82 - NANO-TECHNOLOGY
Information Patent Application
SELF-ALIGNED NANOTUBE FIELD EFFECT TRANSISTOR AND METHOD OF FABRICA...
- Publication number 20100001260
- Publication date Jan 7, 2010
- JOERG APPENZELLER
- B82 - NANO-TECHNOLOGY
Information Patent Application
SELF-ALIGNED NANOTUBE FIELD EFFECT TRANSISTOR AND METHOD OF FABRICA...
- Publication number 20090309092
- Publication date Dec 17, 2009
- JOERG APPENZELLER
- B82 - NANO-TECHNOLOGY
Information Patent Application
FIELD-ENHANCED PROGRAMMABLE RESISTANCE MEMORY CELL
- Publication number 20090298252
- Publication date Dec 3, 2009
- International Business Machines Corporation
- Gerhard Ingmar Meijer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING INTEGRATED CIRCUIT (IC) INCLUDING AT LEAST ONE STO...
- Publication number 20080248624
- Publication date Oct 9, 2008
- International Business Machines Corporation
- David V. Horak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED PROCESS FOR NANOTUBE/NANOWIRE FETs
- Publication number 20080227259
- Publication date Sep 18, 2008
- International Business Machines Corporation
- Phaedon Avouris
- B82 - NANO-TECHNOLOGY
Information Patent Application
Integrated Circuit Having Gates and Active Regions Forming a Regula...
- Publication number 20080210981
- Publication date Sep 4, 2008
- International Business Machines Corporation
- Leland Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED PROCESS FOR NANOTUBE/NANOWIRE FETs
- Publication number 20080026534
- Publication date Jan 31, 2008
- International Business Machines Corporation
- Phaedon Avouris
- B82 - NANO-TECHNOLOGY
Information Patent Application
Self-Aligned Nanotube Field Effect Transistor and Method of Fabrica...
- Publication number 20080017899
- Publication date Jan 24, 2008
- Joerg Appenzeller
- B82 - NANO-TECHNOLOGY
Information Patent Application
Integrated Circuit Having Gates and Active Regions Forming a Regula...
- Publication number 20070235764
- Publication date Oct 11, 2007
- International Business Machines Corporation
- Leland Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-volatile content addressable memory using phase-change-material...
- Publication number 20070002608
- Publication date Jan 4, 2007
- International Business Machines Corporation
- Louis L.C. Hsu
- G11 - INFORMATION STORAGE
Information Patent Application
Connection device
- Publication number 20060214301
- Publication date Sep 28, 2006
- David J. Frank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-aligned process for nanotube/nanowire FETs
- Publication number 20060151844
- Publication date Jul 13, 2006
- International Business Machines Corporation
- Phaedon Avouris
- B82 - NANO-TECHNOLOGY
Information Patent Application
Integrated circuit having gates and active regions forming a regula...
- Publication number 20060121715
- Publication date Jun 8, 2006
- International Business Machines Corporation
- Leland Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Circuit and Method of Controlling Integrated Circuit Power Consumpt...
- Publication number 20060097775
- Publication date May 11, 2006
- International Business Machines Corporation
- Huilong Zhu
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Cross point array cell with series connected semiconductor diode an...
- Publication number 20060034116
- Publication date Feb 16, 2006
- Chung H. Lam
- G11 - INFORMATION STORAGE
Information Patent Application
Field-enhanced programmable resistance memory cell
- Publication number 20060027893
- Publication date Feb 9, 2006
- International Business Machines Corporation
- Gerhard Ingmar Meijer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Phase Change Memory Cell On Silicon-On Insulator Substrate
- Publication number 20050208699
- Publication date Sep 22, 2005
- International Business Machines Corporation
- Stephen S. Furkay
- G11 - INFORMATION STORAGE
Information Patent Application
Phase change tip storage cell
- Publication number 20050127349
- Publication date Jun 16, 2005
- David V. Horak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field emission phase change diode memory
- Publication number 20050127350
- Publication date Jun 16, 2005
- Stephen S. Furkay
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-aligned double gate mosfet with separate gates
- Publication number 20050127412
- Publication date Jun 16, 2005
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-spectral imaging with almost-full fill-factor using 3D pixels
- Publication number 20050109917
- Publication date May 26, 2005
- Hon-Sum P. Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-bit phase change memory cell and multi-bit phase change memor...
- Publication number 20050112896
- Publication date May 26, 2005
- International Business Machines Corporation
- Hendrik F. Hamann
- G11 - INFORMATION STORAGE
Information Patent Application
Connection device and method of forming a connection device
- Publication number 20050056937
- Publication date Mar 17, 2005
- International Business Machines Corporation
- David J. Frank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-aligned nanotube field effect transistor and method of fabrica...
- Publication number 20050056826
- Publication date Mar 17, 2005
- Joerg Appenzeller
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method for manufacturing device substrate with metal back-gate and...
- Publication number 20040235284
- Publication date Nov 25, 2004
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Double-gate fet with planarized surfaces and self-aligned silicides
- Publication number 20040023460
- Publication date Feb 5, 2004
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Damascene double-gate FET
- Publication number 20030193070
- Publication date Oct 16, 2003
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Germanium field effect transistor and method of fabricating the same
- Publication number 20030190791
- Publication date Oct 9, 2003
- International Business Machines Corporation
- Massimo V. Fischetti
- H01 - BASIC ELECTRIC ELEMENTS

Hon-Sum Phillip Wong

Person

Patents Grantslast 30 patents

Method of fabricating self-aligned nanotube field effect transistor

Field-enhanced programmable resistance memory cell

Self-aligned nanotube field effect transistor

Self-aligned process for nanotube/nanowire FETs

Self-aligned process for nanotube/nanowire FETs

Phase change tip storage cell

Self-aligned nanotube field effect transistor

Method of making integrated circuit (IC) including at least one sto...

Field-enhanced programmable resistance memory cell

Integrated circuit having gates and active regions forming a regula...

Vertical nanotube field effect transistor

Self-aligned process for nanotube/nanowire FETs

Multi-bit phase change memory cell and multi-bit phase change memor...

Integrated circuit having gates and active regions forming a regula...

Integrated circuit having gates and active regions forming a regula...

Connection device with actuating element for changing a conductive...

Non-volatile content addressable memory using phase-change-material...

Self-aligned nanotube field effect transistor and method of fabrica...

Method for manufacturing device substrate with metal back-gate and...

Circuit and method of controlling integrated circuit power consumpt...

Self-aligned double gate mosfet with separate gates

Method of fabricating a connection device

Field emission phase change diode memory

Phase change memory cell on silicon-on insulator substrate

Image capture system for mobile communications

Self-aligned gate MOSFET with separate gates

Double-gate fet with planarized surfaces and self-aligned silicides

Self-aligned nanotube field effect transistor and method of fabrica...

Germanium field effect transistor and method of fabricating the same

Method for manufacturing device substrate with metal back-gate and...

Patents Applicationslast 30 patents

Self-Aligned Nanotube Field Effect Transistor and Method of Fabrica...

SELF-ALIGNED PROCESS FOR NANOTUBE/NANOWIRE FETs

SELF-ALIGNED NANOTUBE FIELD EFFECT TRANSISTOR AND METHOD OF FABRICA...

SELF-ALIGNED NANOTUBE FIELD EFFECT TRANSISTOR AND METHOD OF FABRICA...

FIELD-ENHANCED PROGRAMMABLE RESISTANCE MEMORY CELL

METHOD OF MAKING INTEGRATED CIRCUIT (IC) INCLUDING AT LEAST ONE STO...

SELF-ALIGNED PROCESS FOR NANOTUBE/NANOWIRE FETs

Integrated Circuit Having Gates and Active Regions Forming a Regula...

SELF-ALIGNED PROCESS FOR NANOTUBE/NANOWIRE FETs

Self-Aligned Nanotube Field Effect Transistor and Method of Fabrica...

Integrated Circuit Having Gates and Active Regions Forming a Regula...

Non-volatile content addressable memory using phase-change-material...

Connection device

Self-aligned process for nanotube/nanowire FETs

Integrated circuit having gates and active regions forming a regula...

Circuit and Method of Controlling Integrated Circuit Power Consumpt...

Cross point array cell with series connected semiconductor diode an...

Field-enhanced programmable resistance memory cell

Phase Change Memory Cell On Silicon-On Insulator Substrate

Phase change tip storage cell

Field emission phase change diode memory

Self-aligned double gate mosfet with separate gates

Multi-spectral imaging with almost-full fill-factor using 3D pixels

Multi-bit phase change memory cell and multi-bit phase change memor...

Connection device and method of forming a connection device

Self-aligned nanotube field effect transistor and method of fabrica...

Method for manufacturing device substrate with metal back-gate and...

Double-gate fet with planarized surfaces and self-aligned silicides

Damascene double-gate FET

Germanium field effect transistor and method of fabricating the same