Hong Yang

Person

Singapore, SG

People

Patents Grantslast 30 patents

Information Patent Grant
Low power memory cell with high sensing margin
- Patent number 9,583,167
- Issue date Feb 28, 2017
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Tze Ho Simon Chan
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit system with double doped drain transistor
- Patent number 9,269,770
- Issue date Feb 23, 2016
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Yisuo Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive non-volatile memory
- Patent number 9,218,875
- Issue date Dec 22, 2015
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Yang Hong
- G11 - INFORMATION STORAGE
Information Patent Grant
Stackable non-volatile memory
- Patent number 9,196,356
- Issue date Nov 24, 2015
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Yang Hong
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolative memory with filament
- Patent number 9,082,964
- Issue date Jul 14, 2015
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Yang Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolative memory
- Patent number 9,076,962
- Issue date Jul 7, 2015
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Yang Hong
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DEVICE FOR PROCESSING HOMOMORPHICALLY ENCRYPTED DATA
- Publication number 20240039694
- Publication date Feb 1, 2024
- Agency for Science, Technology and Research
- Hong YANG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Active Storage Unit and Array
- Publication number 20170270044
- Publication date Sep 21, 2017
- Agency for Science, Technology and Research
- Hong YANG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
LOW POWER MEMORY CELL WITH HIGH SENSING MARGIN
- Publication number 20160322090
- Publication date Nov 3, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Tze Ho, Simon CHAN
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATIVE MEMORY
- Publication number 20140264244
- Publication date Sep 18, 2014
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Yang HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATIVE MEMORY WITH FILAMENT
- Publication number 20140264243
- Publication date Sep 18, 2014
- GLOBAL FOUNDERS Singapore Pte. Ltd.
- Yang HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKABLE NON-VOLATILE MEMORY
- Publication number 20140268990
- Publication date Sep 18, 2014
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Yang HONG
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE NON-VOLATILE MEMORY
- Publication number 20140268989
- Publication date Sep 18, 2014
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Yang HONG
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT SYSTEM WITH DOUBLE DOPED DRAIN TRANSISTOR
- Publication number 20070210376
- Publication date Sep 13, 2007
- Chartered Semiconductor Manufacturing LTD.
- Yisuo Li
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Low power memory cell with high sensing margin

Integrated circuit system with double doped drain transistor

Resistive non-volatile memory

Stackable non-volatile memory

Nonvolative memory with filament

Nonvolative memory

Patents Applicationslast 30 patents

DEVICE FOR PROCESSING HOMOMORPHICALLY ENCRYPTED DATA

Active Storage Unit and Array

LOW POWER MEMORY CELL WITH HIGH SENSING MARGIN

NONVOLATIVE MEMORY

NONVOLATIVE MEMORY WITH FILAMENT

STACKABLE NON-VOLATILE MEMORY

RESISTIVE NON-VOLATILE MEMORY

INTEGRATED CIRCUIT SYSTEM WITH DOUBLE DOPED DRAIN TRANSISTOR