Horng-Nan Chern

Person

Chia-Li Chen, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and operating method thereof
- Patent number 9,490,360
- Issue date Nov 8, 2016
- United Microelectronics Corp.
- Ming-Shing Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reducing stress between a nitride silicon spacer and a su...
- Patent number 6,429,135
- Issue date Aug 6, 2002
- United Microelectronics Corp.
- Horng-Nan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing lower electrode of DRAM capacitor
- Patent number 6,403,411
- Issue date Jun 11, 2002
- United Microelectronics Corp.
- Chih-Hsun Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a wide-based box-structured capacitor contain...
- Patent number 6,303,435
- Issue date Oct 16, 2001
- United Microelectronics Corp.
- Horng-Nan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor dielectric layer
- Patent number 6,255,229
- Issue date Jul 3, 2001
- United Microelectronics Corp.
- Kevin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming DRAM capacitors with a native oxide etch-stop
- Patent number 6,238,974
- Issue date May 29, 2001
- United Microelectronics Corp.
- Horng-Nan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a borderless contact
- Patent number 6,211,021
- Issue date Apr 3, 2001
- United Microelectronics Corp.
- Chuan-Fu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of avoiding CMP caused residue on wafer edge uncompleted field
- Patent number 6,211,086
- Issue date Apr 3, 2001
- United Microelectronics Corp.
- Tzung-Han Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming capacitor of memory cell
- Patent number 6,177,310
- Issue date Jan 23, 2001
- United Microelectronics Corp.
- Kuen-Yow Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for increasing the effective spacer width
- Patent number 6,159,806
- Issue date Dec 12, 2000
- United Microelectronics Corp.
- Horng-Nan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming gate spacers with different widths
- Patent number 6,150,223
- Issue date Nov 21, 2000
- United Microelectronics Corp.
- Horng-Non Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating double-cylinder capacitor
- Patent number 6,140,202
- Issue date Oct 31, 2000
- United Microelectronics Corp.
- Horng-Nan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a hemispherical silicon grain layer
- Patent number 6,124,161
- Issue date Sep 26, 2000
- United Microelectronics Corp.
- Horng-Nan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing an alignment mark with an etched back diele...
- Patent number 6,100,158
- Issue date Aug 8, 2000
- United Microelectronics Corp.
- Tzung-Han Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating method of stacked type capacitor
- Patent number 6,063,660
- Issue date May 16, 2000
- United Microelectronics Corp.
- Hua-Chou Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of avoiding sidewall residue in forming connections
- Patent number 6,040,241
- Issue date Mar 21, 2000
- United Microelectronics Corp.
- Tzung-Han Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND OPERATING METHOD THEREOF
- Publication number 20150236150
- Publication date Aug 20, 2015
- United Microelectronics Corp.
- Ming-Shing Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A MOS TRANSISTOR OF AN EMBEDDED MEMORY
- Publication number 20020173099
- Publication date Nov 21, 2002
- Horng-Nan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming a contact plug without a dimple surface
- Publication number 20020111011
- Publication date Aug 15, 2002
- King-Lung Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A BIT LINE AND A NODE CONTACT HOLE
- Publication number 20020098699
- Publication date Jul 25, 2002
- Horng-Nan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF REDUCING STRESS BETWEEN A NITRIDE SILICON SPACER AND A SU...
- Publication number 20020090828
- Publication date Jul 11, 2002
- Horng-Nan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating a wide-based box- structured capacitor contai...
- Publication number 20010032994
- Publication date Oct 25, 2001
- Horng-Nan Chern
- H01 - BASIC ELECTRIC ELEMENTS

Horng-Nan Chern

Person

Patents Grantslast 30 patents

Semiconductor device and operating method thereof

Method of reducing stress between a nitride silicon spacer and a su...

Method for manufacturing lower electrode of DRAM capacitor

Method of fabricating a wide-based box-structured capacitor contain...

Method for forming semiconductor dielectric layer

Method of forming DRAM capacitors with a native oxide etch-stop

Method for forming a borderless contact

Method of avoiding CMP caused residue on wafer edge uncompleted field

Method for forming capacitor of memory cell

Method for increasing the effective spacer width

Method for forming gate spacers with different widths

Method of fabricating double-cylinder capacitor

Method for fabricating a hemispherical silicon grain layer

Method of manufacturing an alignment mark with an etched back diele...

Fabricating method of stacked type capacitor

Method of avoiding sidewall residue in forming connections

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND OPERATING METHOD THEREOF

METHOD FOR FABRICATING A MOS TRANSISTOR OF AN EMBEDDED MEMORY

Method for forming a contact plug without a dimple surface

METHOD OF FORMING A BIT LINE AND A NODE CONTACT HOLE

METHOD OF REDUCING STRESS BETWEEN A NITRIDE SILICON SPACER AND A SU...

Method of fabricating a wide-based box- structured capacitor contai...