Hsiang-Lan Lung

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Dobbs Ferry, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Reconfigurable AI system
- Patent number 12,299,597
- Issue date May 13, 2025
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
3D virtual ground memory and manufacturing methods for same
- Patent number 11,916,011
- Issue date Feb 27, 2024
- Macronix International Co., Ltd.
- Erh-Kun Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D memory with confined cell
- Patent number 11,751,407
- Issue date Sep 5, 2023
- Macronix International Co., Ltd.
- Erh-Kun Lai
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-level cell threshold voltage operation of one-selector-one-re...
- Patent number 11,557,342
- Issue date Jan 17, 2023
- International Business Machines Corporation
- Nanbo Gong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Array of pillars located in a uniform pattern
- Patent number 11,424,260
- Issue date Aug 23, 2022
- Macronix International Co., Ltd.
- Erh-Kun Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High thermal stability SiOx doped GeSbTe materials suitable for emb...
- Patent number 11,362,276
- Issue date Jun 14, 2022
- Macronix International Co., Ltd.
- Huai-Yu Cheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and memory cell
- Patent number 11,289,540
- Issue date Mar 29, 2022
- Macronix International Co., Ltd.
- Huai-Yu Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Suppressing oxidation of silicon germanium selenium arsenide material
- Patent number 11,271,155
- Issue date Mar 8, 2022
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D memory array having select lines
- Patent number 11,211,395
- Issue date Dec 28, 2021
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
C—As—Se—Ge ovonic materials for selector devices and memory devices...
- Patent number 11,158,787
- Issue date Oct 26, 2021
- Macronix International Co., Ltd.
- Huai-Yu Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-level cell threshold voltage operation of one-selector-one-re...
- Patent number 11,139,025
- Issue date Oct 5, 2021
- International Business Machines Corporation
- Nanbo Gong
- G11 - INFORMATION STORAGE
Information Patent Grant
Layer cost scalable 3D phase change cross-point memory
- Patent number 10,950,786
- Issue date Mar 16, 2021
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D memory with confined cell
- Patent number 10,937,832
- Issue date Mar 2, 2021
- Macronix International Co., Ltd.
- Erh-Kun Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pitch scalable 3D NAND
- Patent number 10,840,254
- Issue date Nov 17, 2020
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bit cost scalable 3D phase change cross-point memory
- Patent number 10,818,729
- Issue date Oct 27, 2020
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing word line capacitance in 3D memory
- Patent number 10,636,812
- Issue date Apr 28, 2020
- Macronix International Co., Ltd.
- Erh-Kun Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned 3D memory with confined cell
- Patent number 10,593,875
- Issue date Mar 17, 2020
- Macronix International Co., Ltd.
- Erh-Kun Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superlattice-like switching devices
- Patent number 10,541,271
- Issue date Jan 21, 2020
- Macronix International Co., Ltd.
- Huai-Yu Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Decoding scheme for 3D cross-point memory array
- Patent number 10,497,437
- Issue date Dec 3, 2019
- Macronix International Co., Ltd.
- Hsin-Yi Ho
- G11 - INFORMATION STORAGE
Information Patent Grant
Low resistance vertical channel 3D memory
- Patent number 10,453,856
- Issue date Oct 22, 2019
- Macronix International Co., Ltd.
- Erh-Kun Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Te-free AsSeGe chalcogenides for selector devices and memory device...
- Patent number 10,374,009
- Issue date Aug 6, 2019
- Macronix International Co., Ltd.
- Huai-Yu Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fast switching 3D cross-point array
- Patent number 10,157,671
- Issue date Dec 18, 2018
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- G11 - INFORMATION STORAGE
Information Patent Grant
Dielectric doped, Sb-rich GST phase change memory
- Patent number 10,050,196
- Issue date Aug 14, 2018
- Macronix International Co., Ltd.
- Huai-Yu Cheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for manufacturing 3D NAND memory using gate replacement, and...
- Patent number 10,043,819
- Issue date Aug 7, 2018
- Macronix International Co., Ltd.
- Erh-Kun Lai
- G11 - INFORMATION STORAGE
Information Patent Grant
3D phase change memory with high endurance
- Patent number 9,972,660
- Issue date May 15, 2018
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaSbGe phase change memory materials
- Patent number 9,917,252
- Issue date Mar 13, 2018
- Macronix International Co., Ltd.
- Huai-Yu Cheng
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Stacked bit line dual word line nonvolatile memory
- Patent number 9,799,663
- Issue date Oct 24, 2017
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory with high endurance
- Patent number 9,793,323
- Issue date Oct 17, 2017
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory array architecture achieving high write/read speed
- Patent number 9,779,813
- Issue date Oct 3, 2017
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory with inter-granular switching
- Patent number 9,672,906
- Issue date Jun 6, 2017
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
3D BIT COST SCALABLE MEMORY
- Publication number 20240431120
- Publication date Dec 26, 2024
- Macronix International Co., Ltd.
- HSIANG-LAN LUNG
Information Patent Application
3D Hybrid Bonding 3D Memory Devices with NPU/CPU for AI Inference A...
- Publication number 20240370715
- Publication date Nov 7, 2024
- Macronix International Co., Ltd.
- HSIANG-LAN LUNG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DATA OPTIMIZATION FOR HIGH BANDWIDTH (HBW) NVM AI INFERENCE SYSTEM
- Publication number 20240281636
- Publication date Aug 22, 2024
- Macronix International Co., Ltd.
- I-Ting KUO
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
HIGH BANDWIDTH NON-VOLATILE MEMORY FOR AI INFERENCE SYSTEM
- Publication number 20240281142
- Publication date Aug 22, 2024
- Macronix International Co., Ltd.
- Hsiang-Lan LUNG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
3D VIRTUAL GROUND MEMORY AND MANUFACTURING METHODS FOR SAME
- Publication number 20240153869
- Publication date May 9, 2024
- Macronix International Co., Ltd.
- Erh-Kun LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL 3D CROSS POINT MEMORY
- Publication number 20240147877
- Publication date May 2, 2024
- Macronix International Co., Ltd.
- HSIANG-LAN LUNG
Information Patent Application
RECONFIGURABLE AI SYSTEM
- Publication number 20230067190
- Publication date Mar 2, 2023
- Macronix International Co., Ltd.
- HSIANG-LAN LUNG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY WITH LAMINATED CELL
- Publication number 20220407000
- Publication date Dec 22, 2022
- Macronix International Co., Ltd.
- Chih-Hsiang YANG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
3D VIRTUAL GROUND MEMORY AND MANUFACTURING METHODS FOR SAME
- Publication number 20220336347
- Publication date Oct 20, 2022
- Macronix International Co., Ltd.
- Erh-Kun LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTOR DEVICES INCLUDING S-DOPED AsSeGeSi CHALCOGENIDES
- Publication number 20220123209
- Publication date Apr 21, 2022
- International Business Machines Corporation
- Huai-Yu CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SMALL LINE OR PILLAR STRUCTURE AND PROCESS
- Publication number 20220069211
- Publication date Mar 3, 2022
- Macronix International Co., Ltd.
- Hsiang-Lan LUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LEVEL CELL THRESHOLD VOLTAGE OPERATION OF ONE-SELECTOR-ONE-RE...
- Publication number 20210375360
- Publication date Dec 2, 2021
- International Business Machines Corporation
- Nanbo Gong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH THERMAL STABILITY SiOX DOPED GeSbTe MATERIALS SUITABLE FOR EMB...
- Publication number 20210305507
- Publication date Sep 30, 2021
- Macronix International Co., Ltd.
- Huai-Yu CHENG
- G11 - INFORMATION STORAGE
Information Patent Application
SUPPRESSING OXIDATION OF SILICON GERMANIUM SELENIUM ARSENIDE MATERIAL
- Publication number 20210288251
- Publication date Sep 16, 2021
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY WITH A CARBON BUFFER LAYER
- Publication number 20210249600
- Publication date Aug 12, 2021
- Macronix International Co., Ltd.
- Wei-Chih CHIEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LEVEL CELL THRESHOLD VOLTAGE OPERATION OF ONE-SELECTOR-ONE-RE...
- Publication number 20210225441
- Publication date Jul 22, 2021
- International Business Machines Corporation
- Nanbo Gong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MEMORY CELL
- Publication number 20210210554
- Publication date Jul 8, 2021
- Macronix International Co., Ltd.
- Huai-Yu CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARRAY OF PILLARS LOCATED IN A UNIFORM PATTERN
- Publication number 20210193673
- Publication date Jun 24, 2021
- Macronix International Co., Ltd.
- Erh-Kun LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAsSeGe OVONIC MATERIALS FOR SELECTOR DEVICES AND MEMORY DEVICES US...
- Publication number 20210184112
- Publication date Jun 17, 2021
- Macronix International Co., Ltd.
- Huai-Yu CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D MEMORY WITH CONFINED CELL
- Publication number 20210143216
- Publication date May 13, 2021
- Macronix International Co., Ltd.
- Erh-Kun LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D MEMORY ARRAY HAVING SELECT LINES
- Publication number 20210066314
- Publication date Mar 4, 2021
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
BARRIER LAYER FOR SELECTOR DEVICES AND MEMORY DEVICES USING SAME
- Publication number 20200295083
- Publication date Sep 17, 2020
- Macronix International Co., Ltd.
- Huai-Yu CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D MEMORY WITH CONFINED CELL
- Publication number 20190393268
- Publication date Dec 26, 2019
- Macronix International Co., Ltd.
- Erh-Kun LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED 3D MEMORY WITH CONFINED CELL
- Publication number 20190386213
- Publication date Dec 19, 2019
- Macronix International Co., Ltd.
- Erh-Kun LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PITCH SCALABLE 3D NAND
- Publication number 20190363098
- Publication date Nov 28, 2019
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYER COST SCALABLE 3D PHASE CHANGE CROSS-POINT MEMORY
- Publication number 20190355903
- Publication date Nov 21, 2019
- Macronix International Co., Ltd.
- Hsiang-Lan LUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIT COST SCALABLE 3D PHASE CHANGE CROSS-POINT MEMORY
- Publication number 20190355790
- Publication date Nov 21, 2019
- Hsiang-Lan LUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRING SELECT LINE GATE OXIDE METHOD FOR 3D VERTICAL CHANNEL NAND M...
- Publication number 20190312050
- Publication date Oct 10, 2019
- Macronix International Co., Ltd.
- Erh-Kun LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE VERTICAL CHANNEL 3D MEMORY
- Publication number 20190304985
- Publication date Oct 3, 2019
- Macronix International Co., Ltd.
- Erh-Kun LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERLATTICE-LIKE SWITCHING DEVICES
- Publication number 20190115393
- Publication date Apr 18, 2019
- Macronix International Co., Ltd.
- Huai-Yu CHENG
- H01 - BASIC ELECTRIC ELEMENTS

Hsiang-Lan Lung

Person

Patents Grantslast 30 patents

Reconfigurable AI system

3D virtual ground memory and manufacturing methods for same

3D memory with confined cell

Multi-level cell threshold voltage operation of one-selector-one-re...

Array of pillars located in a uniform pattern

High thermal stability SiOx doped GeSbTe materials suitable for emb...

Semiconductor device and memory cell

Suppressing oxidation of silicon germanium selenium arsenide material

3D memory array having select lines

C—As—Se—Ge ovonic materials for selector devices and memory devices...

Multi-level cell threshold voltage operation of one-selector-one-re...

Layer cost scalable 3D phase change cross-point memory

3D memory with confined cell

Pitch scalable 3D NAND

Bit cost scalable 3D phase change cross-point memory

Reducing word line capacitance in 3D memory

Self-aligned 3D memory with confined cell

Superlattice-like switching devices

Decoding scheme for 3D cross-point memory array

Low resistance vertical channel 3D memory

Te-free AsSeGe chalcogenides for selector devices and memory device...

Fast switching 3D cross-point array

Dielectric doped, Sb-rich GST phase change memory

Method for manufacturing 3D NAND memory using gate replacement, and...

3D phase change memory with high endurance

GaSbGe phase change memory materials

Stacked bit line dual word line nonvolatile memory

Phase change memory with high endurance

Phase change memory array architecture achieving high write/read speed

Phase change memory with inter-granular switching

Patents Applicationslast 30 patents

3D BIT COST SCALABLE MEMORY

3D Hybrid Bonding 3D Memory Devices with NPU/CPU for AI Inference A...

DATA OPTIMIZATION FOR HIGH BANDWIDTH (HBW) NVM AI INFERENCE SYSTEM

HIGH BANDWIDTH NON-VOLATILE MEMORY FOR AI INFERENCE SYSTEM

3D VIRTUAL GROUND MEMORY AND MANUFACTURING METHODS FOR SAME

VERTICAL 3D CROSS POINT MEMORY

RECONFIGURABLE AI SYSTEM

MEMORY WITH LAMINATED CELL

3D VIRTUAL GROUND MEMORY AND MANUFACTURING METHODS FOR SAME

SELECTOR DEVICES INCLUDING S-DOPED AsSeGeSi CHALCOGENIDES

SMALL LINE OR PILLAR STRUCTURE AND PROCESS

MULTI-LEVEL CELL THRESHOLD VOLTAGE OPERATION OF ONE-SELECTOR-ONE-RE...

HIGH THERMAL STABILITY SiOX DOPED GeSbTe MATERIALS SUITABLE FOR EMB...

SUPPRESSING OXIDATION OF SILICON GERMANIUM SELENIUM ARSENIDE MATERIAL

PHASE CHANGE MEMORY WITH A CARBON BUFFER LAYER

MULTI-LEVEL CELL THRESHOLD VOLTAGE OPERATION OF ONE-SELECTOR-ONE-RE...

SEMICONDUCTOR DEVICE AND MEMORY CELL

ARRAY OF PILLARS LOCATED IN A UNIFORM PATTERN

CAsSeGe OVONIC MATERIALS FOR SELECTOR DEVICES AND MEMORY DEVICES US...

3D MEMORY WITH CONFINED CELL

3D MEMORY ARRAY HAVING SELECT LINES

BARRIER LAYER FOR SELECTOR DEVICES AND MEMORY DEVICES USING SAME

3D MEMORY WITH CONFINED CELL

SELF-ALIGNED 3D MEMORY WITH CONFINED CELL

PITCH SCALABLE 3D NAND

LAYER COST SCALABLE 3D PHASE CHANGE CROSS-POINT MEMORY

BIT COST SCALABLE 3D PHASE CHANGE CROSS-POINT MEMORY

STRING SELECT LINE GATE OXIDE METHOD FOR 3D VERTICAL CHANNEL NAND M...

LOW RESISTANCE VERTICAL CHANNEL 3D MEMORY

SUPERLATTICE-LIKE SWITCHING DEVICES