Hsin-Neng TAI

Person

Clifton Park, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Shallow trench isolation integration methods and devices formed the...
- Patent number 9,385,192
- Issue date Jul 5, 2016
- GLOBALFOUNDRIES Inc.
- Hongliang Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate height uniformity in semiconductor devices
- Patent number 9,349,814
- Issue date May 24, 2016
- GLOBALFOUNDRIES Inc.
- Tsung-Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of oxide recesses for gate height control
- Patent number 9,257,516
- Issue date Feb 9, 2016
- GLOBALFOUNDRIES Inc.
- Tsung-Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation integration methods and devices formed the...
- Patent number 9,123,771
- Issue date Sep 1, 2015
- GLOBALFOUNDRIES Inc.
- Hongliang Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate height uniformity in semiconductor devices
- Patent number 9,093,560
- Issue date Jul 28, 2015
- GLOBALFOUNDRIES Inc.
- Tsung-Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Removal of nitride bump in opening replacement gate structure
- Patent number 8,927,356
- Issue date Jan 6, 2015
- GLOBALFOUNDRIES Inc.
- Tsung-Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of oxide recesses for gate height control
- Patent number 8,877,580
- Issue date Nov 4, 2014
- GLOBALFOUNDRIES Inc.
- Tsung-Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SHALLOW TRENCH ISOLATION INTEGRATION METHODS AND DEVICES FORMED THE...
- Publication number 20150333121
- Publication date Nov 19, 2015
- GLOBALFOUNDRIES INC.
- Hongliang Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE HEIGHT UNIFORMITY IN SEMICONDUCTOR DEVICES
- Publication number 20150270364
- Publication date Sep 24, 2015
- GLOBALFOUNDRIES INC.
- Tsung-Liang CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE HEIGHT UNIFORMITY IN SEMICONDUCTOR DEVICES
- Publication number 20150084131
- Publication date Mar 26, 2015
- Tsung-Liang CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ISOLATION REGION UNIFORMITY
- Publication number 20150087134
- Publication date Mar 26, 2015
- GLOBALFOUNDRIES INC.
- Tsung-Liang CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCTION OF OXIDE RECESSES FOR GATE HEIGHT CONTROL
- Publication number 20150048446
- Publication date Feb 19, 2015
- GLOBALFOUNDRIES INC.
- Tsung-Liang CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REMOVAL OF NITRIDE BUMP IN OPENING REPLACEMENT GATE STRUCTURE
- Publication number 20140370697
- Publication date Dec 18, 2014
- Tsung-Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCTION OF OXIDE RECESSES FOR GATE HEIGHT CONTROL
- Publication number 20140339642
- Publication date Nov 20, 2014
- Tsung-Liang CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW TRENCH ISOLATION INTEGRATION METHODS AND DEVICES FORMED THE...
- Publication number 20140227858
- Publication date Aug 14, 2014
- GLOBALFOUNDRIES INC.
- Hongliang Shen
- H01 - BASIC ELECTRIC ELEMENTS

Hsin-Neng TAI

Person

Patents Grantslast 30 patents

Shallow trench isolation integration methods and devices formed the...

Gate height uniformity in semiconductor devices

Reduction of oxide recesses for gate height control

Shallow trench isolation integration methods and devices formed the...

Gate height uniformity in semiconductor devices

Removal of nitride bump in opening replacement gate structure

Reduction of oxide recesses for gate height control

Patents Applicationslast 30 patents

SHALLOW TRENCH ISOLATION INTEGRATION METHODS AND DEVICES FORMED THE...

GATE HEIGHT UNIFORMITY IN SEMICONDUCTOR DEVICES

GATE HEIGHT UNIFORMITY IN SEMICONDUCTOR DEVICES

SEMICONDUCTOR ISOLATION REGION UNIFORMITY

REDUCTION OF OXIDE RECESSES FOR GATE HEIGHT CONTROL

REMOVAL OF NITRIDE BUMP IN OPENING REPLACEMENT GATE STRUCTURE

REDUCTION OF OXIDE RECESSES FOR GATE HEIGHT CONTROL

SHALLOW TRENCH ISOLATION INTEGRATION METHODS AND DEVICES FORMED THE...