Hsing-San Lee

Person

Williston, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Process for forming a polysilicon electrode in a trench
- Patent number 5,656,544
- Issue date Aug 12, 1997
- International Business Machines Corporation
- Albert Stephan Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fast check bit write for a semiconductor memory
- Patent number 5,638,385
- Issue date Jun 10, 1997
- International Business Machines Corporation
- John A. Fifield
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method of making shadow RAM cell having a shallow trench EEPROM
- Patent number 5,399,516
- Issue date Mar 21, 1995
- International Business Machines Corporation
- Albert S. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fault tolerant logic system
- Patent number 5,260,952
- Issue date Nov 9, 1993
- IBM Corporation
- Kenneth E. Beilstein
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Shadow ram cell having a shallow trench eeprom
- Patent number 5,196,722
- Issue date Mar 23, 1993
- International Business Machines Corporation
- Albert S. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sense amplifier control circuit
- Patent number 4,825,410
- Issue date Apr 25, 1989
- International Business Machines Corporation
- Hsing-San Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Sensing technique for memories with small cells
- Patent number 4,301,519
- Issue date Nov 17, 1981
- International Business Machines Corporation
- Hsing-San Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Accessing arrangement for memories with small cells
- Patent number 4,160,275
- Issue date Jul 3, 1979
- International Business Machines Corporation
- Hsing-San Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Twin nodes capacitance memory
- Patent number 4,040,016
- Issue date Aug 2, 1977
- International Business Machines Corporation
- Hsing-San Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Injected charge capacitor memory
- Patent number 4,040,017
- Issue date Aug 2, 1977
- International Business Machines Corporation
- Hsing-San Lee
- G11 - INFORMATION STORAGE

Hsing-San Lee

Person

Patents Grantslast 30 patents

Process for forming a polysilicon electrode in a trench

Fast check bit write for a semiconductor memory

Method of making shadow RAM cell having a shallow trench EEPROM

Fault tolerant logic system

Shadow ram cell having a shallow trench eeprom

Sense amplifier control circuit

Sensing technique for memories with small cells

Accessing arrangement for memories with small cells

Twin nodes capacitance memory

Injected charge capacitor memory