Hsu-Yu CHANG

Person

Hillsboro, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
High voltage extended-drain MOS (EDMOS) nanowire transistors
- Patent number 12,040,395
- Issue date Jul 16, 2024
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ESD diode solution for nanoribbon architectures
- Patent number 11,996,403
- Issue date May 28, 2024
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual threshold voltage (VT) channel devices and their methods of fa...
- Patent number 11,967,615
- Issue date Apr 23, 2024
- Intel Corporation
- Hsu-Yu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having dual nanoribbo...
- Patent number 11,862,703
- Issue date Jan 2, 2024
- Intel Corporation
- Tanuj Trivedi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single gated 3D nanowire inverter for high density thick gate SOC a...
- Patent number 11,791,380
- Issue date Oct 17, 2023
- Intel Corporation
- Rahul Ramaswamy
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Gate-all-around integrated circuit structures having depopulated ch...
- Patent number 11,581,404
- Issue date Feb 14, 2023
- Intel Corporation
- Tanuj Trivedi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate endcap architectures having relatively short vertical stack
- Patent number 11,563,000
- Issue date Jan 24, 2023
- Intel Corporation
- Sairam Subramanian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having dual nanoribbo...
- Patent number 11,437,483
- Issue date Sep 6, 2022
- Intel Corporation
- Tanuj Trivedi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi voltage threshold transistors through process and design-indu...
- Patent number 11,121,040
- Issue date Sep 14, 2021
- Intel Corporation
- Chen-Guan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having depopulated ch...
- Patent number 11,094,782
- Issue date Aug 17, 2021
- Intel Corporation
- Tanuj Trivedi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid finfet structure with bulk source/drain regions
- Patent number 11,075,286
- Issue date Jul 27, 2021
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistor between gates in self-aligned gate edge architecture
- Patent number 10,964,690
- Issue date Mar 30, 2021
- Intel Corporation
- Roman W. Olac-Vaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-based thin film resistor
- Patent number 10,930,729
- Issue date Feb 23, 2021
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation well doping with solid-state diffusion sources for finFET...
- Patent number 10,854,607
- Issue date Dec 1, 2020
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FINFET based junctionless wrap around structure
- Patent number 10,854,757
- Issue date Dec 1, 2020
- Intel Corporation
- Rahul Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic splitter using re-entrant poly silicon waveguides
- Patent number 10,811,751
- Issue date Oct 20, 2020
- Intel Corporation
- Rahul Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS antifuse with void-accelerated breakdown
- Patent number 10,763,209
- Issue date Sep 1, 2020
- Intel Corporation
- Roman Olac-Vaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transmission lines using bending fins from local stress
- Patent number 10,761,264
- Issue date Sep 1, 2020
- Intel Corporation
- Rahul Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Depletion mode gate in ultrathin FINFET based architecture
- Patent number 10,756,210
- Issue date Aug 25, 2020
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doping with solid-state diffusion sources for finFET architectures
- Patent number 10,643,999
- Issue date May 5, 2020
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with thermal performance boost
- Patent number 10,559,688
- Issue date Feb 11, 2020
- Intel Corporation
- Chen-Guan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doping with solid-state diffusion sources for finFET architectures
- Patent number 10,340,273
- Issue date Jul 2, 2019
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gate metal with laterally graduated work function
- Patent number 10,192,969
- Issue date Jan 29, 2019
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-linear fin-based devices
- Patent number 10,164,115
- Issue date Dec 25, 2018
- Intel Corporation
- Neville L. Dias
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Isolation well doping with solid-state diffusion sources for FinFET...
- Patent number 10,090,304
- Issue date Oct 2, 2018
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate transistor with variably sized fin
- Patent number 9,947,585
- Issue date Apr 17, 2018
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBO...
- Publication number 20240088253
- Publication date Mar 14, 2024
- Intel Corporation
- Tanuj TRIVEDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE GATED 3D NANOWIRE INVERTER FOR HIGH DENSITY THICK GATE SOC A...
- Publication number 20230420501
- Publication date Dec 28, 2023
- Intel Corporation
- Rahul RAMASWAMY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBO...
- Publication number 20220359697
- Publication date Nov 10, 2022
- Intel Corporation
- Tanuj TRIVEDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADJACENT GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING NON-M...
- Publication number 20220093588
- Publication date Mar 24, 2022
- Intel Corporation
- Sairam SUBRAMANIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ENDCAP ARCHITECTURES HAVING RELATIVELY SHORT VERTICAL STACK
- Publication number 20210305243
- Publication date Sep 30, 2021
- Intel Corporation
- Sairam SUBRAMANIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBO...
- Publication number 20210280683
- Publication date Sep 9, 2021
- Intel Corporation
- Tanuj TRIVEDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEPOPULATED CH...
- Publication number 20210257453
- Publication date Aug 19, 2021
- Intel Corporation
- Tanuj TRIVEDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEPOPULATED CH...
- Publication number 20210257452
- Publication date Aug 19, 2021
- Intel Corporation
- Tanuj TRIVEDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAIN BASED PERFORMANCE ENHANCEMENT USING SELECTIVE METAL OXIDATIO...
- Publication number 20210193844
- Publication date Jun 24, 2021
- Intel Corporation
- Rahul RAMASWAMY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ESD DIODE SOLUTION FOR NANORIBBON ARCHITECTURES
- Publication number 20210183850
- Publication date Jun 17, 2021
- Intel Corporation
- Nidhi NIDHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE GATED 3D NANOWIRE INVERTER FOR HIGH DENSITY THICK GATE SOC A...
- Publication number 20210184000
- Publication date Jun 17, 2021
- Intel Corporation
- Rahul RAMASWAMY
- B82 - NANO-TECHNOLOGY
Information Patent Application
NANORIBBON THICK GATE DEVICES WITH DIFFERENTIAL RIBBON SPACING AND...
- Publication number 20210184001
- Publication date Jun 17, 2021
- Intel Corporation
- Tanuj TRIVEDI
- B82 - NANO-TECHNOLOGY
Information Patent Application
HIGH VOLTAGE EXTENDED-DRAIN MOS (EDMOS) NANOWIRE TRANSISTORS
- Publication number 20210184032
- Publication date Jun 17, 2021
- Intel Corporation
- Nidhi NIDHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE ULTRA-LOW POWER THICK GATE NANORIBBON TRANSISTORS FOR...
- Publication number 20210184045
- Publication date Jun 17, 2021
- Intel Corporation
- Rahul RAMASWAMY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-INTEGRATED HIGH PERFORMANCE NANORIBBON TRANSISTORS WITH HIGH VOL...
- Publication number 20210184051
- Publication date Jun 17, 2021
- Intel Corporation
- Tanuj TRIVEDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANORIBBON THICK GATE DEVICE WITH HYBRID DIELECTRIC TUNING FOR HIGH...
- Publication number 20210183857
- Publication date Jun 17, 2021
- Intel Corporation
- Walid M. HAFEZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION WELL DOPING WITH SOLID-STATE DIFFUSION SOURCES FOR FINFET...
- Publication number 20200251471
- Publication date Aug 6, 2020
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPLETION MODE GATE IN ULTRATHIN FINFET BASED ARCHITECTURE
- Publication number 20200066907
- Publication date Feb 27, 2020
- Intel Corporation
- Chia-Hong JAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTOR BETWEEN GATES IN SELF-ALIGNED GATE EDGE ARCHITECTURE
- Publication number 20200043914
- Publication date Feb 6, 2020
- Intel Corporation
- ROMAN W. OLAC-VAW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC SPLITTER USING RE-ENTRANT POLY SILICON WAVEGUIDES
- Publication number 20190356032
- Publication date Nov 21, 2019
- Intel Corporation
- Rahul RAMASWAMY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI VOLTAGE THRESHOLD TRANSISTORS THROUGH PROCESS AND DESIGN-INDU...
- Publication number 20190304840
- Publication date Oct 3, 2019
- Intel Corporation
- Chen-Guan LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPING WITH SOLID-STATE DIFFUSION SOURCES FOR FINFET ARCHITECTURES
- Publication number 20190287973
- Publication date Sep 19, 2019
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSMISSION LINES USING BENDING FINS FROM LOCAL STRESS
- Publication number 20190278022
- Publication date Sep 12, 2019
- Intel Corporation
- Rahul RAMASWAMY
- G02 - OPTICS
Information Patent Application
FINFET BASED JUNCTIONLESS WRAP AROUND STRUCTURE
- Publication number 20190245098
- Publication date Aug 8, 2019
- Rahul RAMASWAMY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID FINFET STRUCTURE WITH BULK SOURCE/DRAIN REGIONS
- Publication number 20190237564
- Publication date Aug 1, 2019
- Intel Corporation
- Chia-Hong JAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-BASED THIN FILM RESISTOR
- Publication number 20190206980
- Publication date Jul 4, 2019
- Intel Corporation
- Chia-Hong JAN
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
NON-LINEAR FIN-BASED DEVICES
- Publication number 20190097057
- Publication date Mar 28, 2019
- Intel Corporation
- NEVILLE L. DIAS
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
TRANSISTOR WITH THERMAL PERFORMANCE BOOST
- Publication number 20190027604
- Publication date Jan 24, 2019
- Intel Corporation
- CHEN-GUAN LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL THRESHOLD VOLTAGE (VT) CHANNEL DEVICES AND THEIR METHODS OF FA...
- Publication number 20180323260
- Publication date Nov 8, 2018
- Intel Corporation
- Hsu-Yu CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR GATE METAL WITH LATERALLY GRADUATED WORK FUNCTION
- Publication number 20170207312
- Publication date Jul 20, 2017
- Intel Corporation
- Chia-Hong JAN
- H01 - BASIC ELECTRIC ELEMENTS

Hsu-Yu CHANG

Person

Patents Grantslast 30 patents

High voltage extended-drain MOS (EDMOS) nanowire transistors

ESD diode solution for nanoribbon architectures

Dual threshold voltage (VT) channel devices and their methods of fa...

Gate-all-around integrated circuit structures having dual nanoribbo...

Single gated 3D nanowire inverter for high density thick gate SOC a...

Gate-all-around integrated circuit structures having depopulated ch...

Gate endcap architectures having relatively short vertical stack

Gate-all-around integrated circuit structures having dual nanoribbo...

Multi voltage threshold transistors through process and design-indu...

Gate-all-around integrated circuit structures having depopulated ch...

Hybrid finfet structure with bulk source/drain regions

Resistor between gates in self-aligned gate edge architecture

Fin-based thin film resistor

Isolation well doping with solid-state diffusion sources for finFET...

FINFET based junctionless wrap around structure

Monolithic splitter using re-entrant poly silicon waveguides

MOS antifuse with void-accelerated breakdown

Transmission lines using bending fins from local stress

Depletion mode gate in ultrathin FINFET based architecture

Doping with solid-state diffusion sources for finFET architectures

Transistor with thermal performance boost

Doping with solid-state diffusion sources for finFET architectures

Transistor gate metal with laterally graduated work function

Non-linear fin-based devices

Isolation well doping with solid-state diffusion sources for FinFET...

Multi-gate transistor with variably sized fin

Patents Applicationslast 30 patents

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBO...

SINGLE GATED 3D NANOWIRE INVERTER FOR HIGH DENSITY THICK GATE SOC A...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBO...

ADJACENT GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING NON-M...

GATE ENDCAP ARCHITECTURES HAVING RELATIVELY SHORT VERTICAL STACK

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBO...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEPOPULATED CH...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEPOPULATED CH...

STRAIN BASED PERFORMANCE ENHANCEMENT USING SELECTIVE METAL OXIDATIO...

ESD DIODE SOLUTION FOR NANORIBBON ARCHITECTURES

SINGLE GATED 3D NANOWIRE INVERTER FOR HIGH DENSITY THICK GATE SOC A...

NANORIBBON THICK GATE DEVICES WITH DIFFERENTIAL RIBBON SPACING AND...

HIGH VOLTAGE EXTENDED-DRAIN MOS (EDMOS) NANOWIRE TRANSISTORS

HIGH VOLTAGE ULTRA-LOW POWER THICK GATE NANORIBBON TRANSISTORS FOR...

CO-INTEGRATED HIGH PERFORMANCE NANORIBBON TRANSISTORS WITH HIGH VOL...

NANORIBBON THICK GATE DEVICE WITH HYBRID DIELECTRIC TUNING FOR HIGH...

ISOLATION WELL DOPING WITH SOLID-STATE DIFFUSION SOURCES FOR FINFET...

DEPLETION MODE GATE IN ULTRATHIN FINFET BASED ARCHITECTURE

RESISTOR BETWEEN GATES IN SELF-ALIGNED GATE EDGE ARCHITECTURE

MONOLITHIC SPLITTER USING RE-ENTRANT POLY SILICON WAVEGUIDES

MULTI VOLTAGE THRESHOLD TRANSISTORS THROUGH PROCESS AND DESIGN-INDU...

DOPING WITH SOLID-STATE DIFFUSION SOURCES FOR FINFET ARCHITECTURES

TRANSMISSION LINES USING BENDING FINS FROM LOCAL STRESS

FINFET BASED JUNCTIONLESS WRAP AROUND STRUCTURE

HYBRID FINFET STRUCTURE WITH BULK SOURCE/DRAIN REGIONS

FIN-BASED THIN FILM RESISTOR

NON-LINEAR FIN-BASED DEVICES

TRANSISTOR WITH THERMAL PERFORMANCE BOOST

DUAL THRESHOLD VOLTAGE (VT) CHANNEL DEVICES AND THEIR METHODS OF FA...

TRANSISTOR GATE METAL WITH LATERALLY GRADUATED WORK FUNCTION