Hsueh-Chang Sung

Person

Zhubei City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and methods of manufacturing
- Patent number 12,170,228
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hung-Yao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method
- Patent number 12,112,986
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kun-Mu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain structures and method of forming
- Patent number 12,074,071
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Min Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial source/drain structure and method of forming same
- Patent number 12,062,720
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kun-Mu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor structure
- Patent number 12,034,061
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 12,002,854
- Issue date Jun 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Heng-Wen Ting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protective layer over FinFET and method of forming same
- Patent number 11,948,840
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hung-Yao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a source/drain
- Patent number 11,929,401
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Wei Lee
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial fin structures of finFET having an epitaxial buffer regio...
- Patent number 11,888,046
- Issue date Jan 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsueh-Chang Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,804,408
- Issue date Oct 31, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Min Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doping profile for strained source/drain region
- Patent number 11,749,752
- Issue date Sep 5, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsueh-Chang Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain regions of FINFET devices and methods of forming same
- Patent number 11,735,664
- Issue date Aug 22, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kun-Mu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interfacial layer between fin and source/drain region
- Patent number 11,735,668
- Issue date Aug 22, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Yun Chin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacture
- Patent number 11,710,777
- Issue date Jul 25, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Ao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,677,027
- Issue date Jun 13, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial source/drain structure and method of forming same
- Patent number 11,610,994
- Issue date Mar 21, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Kun-Mu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain structures and method of forming
- Patent number 11,600,534
- Issue date Mar 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Min Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interfacial layer between Fin and source/drain region
- Patent number 11,482,620
- Issue date Oct 25, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Yun Chin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source and drain stressors with recessed top surfaces
- Patent number 11,437,515
- Issue date Sep 6, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kun-Mu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices with strained source/drain structures and method of forming...
- Patent number 11,411,098
- Issue date Aug 9, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsz-Mei Kwok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS devices having epitaxy regions with reduced facets
- Patent number 11,411,109
- Issue date Aug 9, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsueh-Chang Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method of forming same
- Patent number 11,355,620
- Issue date Jun 7, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,348,840
- Issue date May 31, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Min Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with recessed silicon cap and method forming same
- Patent number 11,296,077
- Issue date Apr 5, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yen-Ting Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming fin field effect transistor device structure
- Patent number 11,271,096
- Issue date Mar 8, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a source/drain
- Patent number 11,217,672
- Issue date Jan 4, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial fin structures having an epitaxial buffer region and an e...
- Patent number 11,211,473
- Issue date Dec 28, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsueh-Chang Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 11,171,209
- Issue date Nov 9, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Heng-Wen Ting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 11,164,944
- Issue date Nov 2, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Heng-Wen Ting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Barrier layer above anti-punch through (APT) implant region to impr...
- Patent number 11,158,508
- Issue date Oct 26, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tsung-Yao Wen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Device Having FIN Structure and Method of Forming The...
- Publication number 20240429305
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Min YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET Device and Method
- Publication number 20240395625
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kun-Mu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240387731
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Source/Drain Structure and Method of Forming Same
- Publication number 20240363753
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kun-Mu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Structures and Method of Forming
- Publication number 20240363443
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Min Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacture
- Publication number 20240274667
- Publication date Aug 15, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Heng-Wen Ting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a Source/Drain
- Publication number 20240213330
- Publication date Jun 27, 2024
- Taiwan Semiconductor Manfacturing Co., Ltd.
- Chien-Wei Lee
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL FIN STRUCTURES OF FINFET HAVING AN EPITAXIAL BUFFER REGIO...
- Publication number 20240088266
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsueh-Chang Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING
- Publication number 20230402326
- Publication date Dec 14, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hung-Yao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20230369129
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Min Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPING PROFILE FOR STRAINED SOURCE/DRAIN REGION
- Publication number 20230369491
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsueh-Chang Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN REGIONS OF FINFET DEVICES AND METHODS OF FORMING SAME
- Publication number 20230352589
- Publication date Nov 2, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kun-Mu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20230275153
- Publication date Aug 31, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Source/Drain Structure and Method of Forming Same
- Publication number 20230231052
- Publication date Jul 20, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kun-Mu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Structures and Method of Forming
- Publication number 20230207396
- Publication date Jun 29, 2023
- Taiwan Semiconductor Manfacturing Co., Ltd.
- Wei-Min Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Methods of Manufacturing
- Publication number 20230064844
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hung-Yao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Bending Reduction Through Structure Design
- Publication number 20230011474
- Publication date Jan 12, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Interfacial Layer Between Fin and Source/Drain Region
- Publication number 20220376049
- Publication date Nov 24, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Yun Chin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING DEVICES WITH STRAINED SOURCE/DRAIN STRUCTURES
- Publication number 20220352346
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsz-Mei KWOK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Structures and Method of Forming
- Publication number 20220319934
- Publication date Oct 6, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Min Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET Device and Method of Forming Same
- Publication number 20220302282
- Publication date Sep 22, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20220293473
- Publication date Sep 15, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Min Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistors with Recessed Silicon Cap and Method Forming Same
- Publication number 20220223591
- Publication date Jul 14, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Ting Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR STRUCTURE
- Publication number 20220190139
- Publication date Jun 16, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Wei LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method for Manufacture
- Publication number 20220130979
- Publication date Apr 28, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Ao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a Source/Drain
- Publication number 20220123117
- Publication date Apr 21, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien-Wei Lee
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF FORMING EPITAXIAL FIN STRUCTURES OF FINFET
- Publication number 20220059676
- Publication date Feb 24, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsueh-Chang Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacture
- Publication number 20220059655
- Publication date Feb 24, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Heng-Wen Ting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN REGIONS OF FINFET DEVICES AND METHODS OF FORMING SAME
- Publication number 20210391456
- Publication date Dec 16, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kun-Mu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET Device and Method
- Publication number 20210351081
- Publication date Nov 11, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kun-Mu Li
- H01 - BASIC ELECTRIC ELEMENTS

Hsueh-Chang Sung

Person

Patents Grantslast 30 patents

Semiconductor device and methods of manufacturing

FinFET device and method

Source/drain structures and method of forming

Epitaxial source/drain structure and method of forming same

Method for forming semiconductor structure

Semiconductor device and method of manufacture

Protective layer over FinFET and method of forming same

Method of forming a source/drain

Epitaxial fin structures of finFET having an epitaxial buffer regio...

Semiconductor device and method

Doping profile for strained source/drain region

Source/drain regions of FINFET devices and methods of forming same

Interfacial layer between fin and source/drain region

Semiconductor device and method for manufacture

Semiconductor device and method

Epitaxial source/drain structure and method of forming same

Source/drain structures and method of forming

Interfacial layer between Fin and source/drain region

Source and drain stressors with recessed top surfaces

Devices with strained source/drain structures and method of forming...

MOS devices having epitaxy regions with reduced facets

FinFET device and method of forming same

Semiconductor device and method

Transistors with recessed silicon cap and method forming same

Method for forming fin field effect transistor device structure

Method of forming a source/drain

Epitaxial fin structures having an epitaxial buffer region and an e...

Semiconductor device and method of manufacture

Method of manufacturing a semiconductor device

Barrier layer above anti-punch through (APT) implant region to impr...

Patents Applicationslast 30 patents

Semiconductor Device Having FIN Structure and Method of Forming The...

FinFET Device and Method

SEMICONDUCTOR DEVICE AND METHOD

Epitaxial Source/Drain Structure and Method of Forming Same

Source/Drain Structures and Method of Forming

Semiconductor Device and Method of Manufacture

Method of Forming a Source/Drain

EPITAXIAL FIN STRUCTURES OF FINFET HAVING AN EPITAXIAL BUFFER REGIO...

SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING

Semiconductor Device and Method

DOPING PROFILE FOR STRAINED SOURCE/DRAIN REGION

SOURCE/DRAIN REGIONS OF FINFET DEVICES AND METHODS OF FORMING SAME

Semiconductor Device and Method

Epitaxial Source/Drain Structure and Method of Forming Same

Source/Drain Structures and Method of Forming

Semiconductor Device and Methods of Manufacturing

Fin Bending Reduction Through Structure Design

Interfacial Layer Between Fin and Source/Drain Region

METHOD OF FORMING DEVICES WITH STRAINED SOURCE/DRAIN STRUCTURES

Source/Drain Structures and Method of Forming

FINFET Device and Method of Forming Same

Semiconductor Device and Method

Transistors with Recessed Silicon Cap and Method Forming Same

METHOD FOR FORMING SEMICONDUCTOR STRUCTURE

Semiconductor Device and Method for Manufacture

Method of Forming a Source/Drain

METHOD OF FORMING EPITAXIAL FIN STRUCTURES OF FINFET

Semiconductor Device and Method of Manufacture

SOURCE/DRAIN REGIONS OF FINFET DEVICES AND METHODS OF FORMING SAME

FinFET Device and Method