Hsueh-Wei Chen

Person

Hsinchu City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Incorporating nitrogen in dipole engineering for multi-threshold vo...
- Patent number 12,040,365
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Pei Ying Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Erasable programmable single-ploy non-volatile memory cell and asso...
- Patent number 11,980,029
- Issue date May 7, 2024
- eMemory Technology Inc.
- Hsueh-Wei Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Multiple gate field-effect transistors having various gate oxide th...
- Patent number 11,894,276
- Issue date Feb 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell of non-volatile memory
- Patent number 11,877,456
- Issue date Jan 16, 2024
- eMemory Technology Inc.
- Ying-Je Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit substrate and method for manufacturing the same
- Patent number 11,856,694
- Issue date Dec 26, 2023
- National Taiwan University of Science and Technology
- Chen-Hao Wang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Erasable programmable single-poly non-volatile memory cell and asso...
- Patent number 11,818,887
- Issue date Nov 14, 2023
- eMemory Technology Inc.
- Hsueh-Wei Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Nanostructure field-effect transistor device and method of forming
- Patent number 11,791,216
- Issue date Oct 17, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum dot structure with excellent stability and method for makin...
- Patent number 11,685,861
- Issue date Jun 27, 2023
- National Tsing Hua University
- Chang-Wei Yeh
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Resistive random-access memory cell and associated cell array struc...
- Patent number 11,663,455
- Issue date May 30, 2023
- eMemory Technology Inc.
- Tsung-Mu Lai
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Clustered reaction system
- Patent number 11,584,995
- Issue date Feb 21, 2023
- National Tsing Hua University
- Shih-Jung Ho
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Communication system, data transmission method and base station the...
- Patent number 11,522,645
- Issue date Dec 6, 2022
- Arcadyan Technology Corporation
- Hsueh-Chien Chen
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Nanocrystal with a large stokes shift and a method for preparing th...
- Patent number 11,401,466
- Issue date Aug 2, 2022
- National Tsing Hua University
- Hsueh-Shih Chen
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for canceling crosstalk of QLED display panel and QLED displ...
- Patent number 11,341,895
- Issue date May 24, 2022
- National Tsing Hua University
- Kuo-Yang Lai
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS
Information Patent Grant
White-light QLED component, backlight module and illumination appar...
- Patent number 11,342,522
- Issue date May 24, 2022
- National Tsing Hua University
- Hsueh-Shih Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum dot
- Patent number 11,279,874
- Issue date Mar 22, 2022
- National Tsing Hua University
- Hsueh-Shih Chen
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory cell with isolated well region and associated non-volatile m...
- Patent number 11,245,004
- Issue date Feb 8, 2022
- eMemory Technology Inc.
- Hsueh-Wei Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for making inkjet-printed encapsulated quantum dots, light c...
- Patent number 11,145,636
- Issue date Oct 12, 2021
- National Tsing Hua University
- Hsueh-Shih Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Erasable programmable non-volatile memory
- Patent number 11,049,564
- Issue date Jun 29, 2021
- eMemory Technology Inc.
- Wein-Town Sun
- G11 - INFORMATION STORAGE
Information Patent Grant
Light conversion material with high conversion efficiency
- Patent number 10,935,694
- Issue date Mar 2, 2021
- National Tsing Hua University
- Hsueh-Shih Chen
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Light-diffusion quantum dot nanostructure with voids and LED compon...
- Patent number 10,896,997
- Issue date Jan 19, 2021
- National Tsing Hua University
- Hsueh-Shih Chen
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Methods of fabricating semiconductor devices having isolation struc...
- Patent number 10,867,859
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsueh-Ju Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-poly nonvolatile memory unit
- Patent number 10,797,063
- Issue date Oct 6, 2020
- eMemory Technology Inc.
- Hsueh-Wei Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Combination solution of colloidal quantum dots and method for makin...
- Patent number 10,781,365
- Issue date Sep 22, 2020
- National Tsing Hua University
- Hsueh-Shih Chen
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Anti-counterfeit security verification method and device using quan...
- Patent number 10,713,977
- Issue date Jul 14, 2020
- National Tsing Hua University
- Hsueh-Shih Chen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Light conversion material with light reflective structure and light...
- Patent number 10,670,231
- Issue date Jun 2, 2020
- National Tsing Hua University
- Hsueh-Shih Chen
- F21 - LIGHTING
Information Patent Grant
Quantum dot luminophore
- Patent number 10,611,957
- Issue date Apr 7, 2020
- TSING YAN TECHNOLOGY CO., LTD.
- Ying-Fang Chen
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Transparent conductive film
- Patent number 10,261,643
- Issue date Apr 16, 2019
- National Tsing Hua University
- Hsueh-Shih Chen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Nanowire composite structure and methods of forming the same, sensi...
- Patent number 10,193,006
- Issue date Jan 29, 2019
- National Tsing Hua University
- Hsueh-Shih Chen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Erasable programmable non-volatile memory
- Patent number 10,115,682
- Issue date Oct 30, 2018
- eMemory Technology Inc.
- Chun-Hsiao Li
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Non-contact reactor and nanocrystal fabrication system having the same
- Patent number 10,010,850
- Issue date Jul 3, 2018
- National Tsing Hua University
- Hsueh-Shih Chen
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
MULTI-VT SOLUTION FOR BOTTOM AND TOP TIER DEVICE
- Publication number 20240413152
- Publication date Dec 12, 2024
- TAIWAN SEMICODUCTOR MANUFACTURING CO., LTD.
- Hsueh-Ju Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tuning Work Functions of Complementary Transistors
- Publication number 20240371997
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsueh-Ju Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Incorporating Nitrogen in Dipole Engineering for Multi-Threshold Vo...
- Publication number 20240347606
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Pei Ying Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Incorporating Nitrogen in Dipole Engineering for Multi-Threshold Vo...
- Publication number 20240290630
- Publication date Aug 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Pei Ying Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE GATE FIELD-EFFECT TRANSISTORS HAVING VARIOUS GATE OXIDE TH...
- Publication number 20240243016
- Publication date Jul 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE QUANTUM DOT, METHOD FOR PREPARING THE SAME, AND METHOD FO...
- Publication number 20240228871
- Publication date Jul 11, 2024
- National Tsing-Hua University
- Hsueh-Shih CHEN
- B82 - NANO-TECHNOLOGY
Information Patent Application
COMPOSITE QUANTUM DOT, METHOD FOR PREPARING THE SAME, AND METHOD FO...
- Publication number 20240132775
- Publication date Apr 25, 2024
- National Tsing-Hua University
- Hsueh-Shih CHEN
- B82 - NANO-TECHNOLOGY
Information Patent Application
Volume-less Fluorine Incorporation Method
- Publication number 20240071767
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsueh-Ju Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR QUANTUM DOT STRUCTURE AND METHOD FOR MAKING THE SAME
- Publication number 20240052241
- Publication date Feb 15, 2024
- National Tsing-Hua University
- Chang-Wei YEH
- B82 - NANO-TECHNOLOGY
Information Patent Application
QUANTUM DOT AND METHOD FOR PREPARING THE SAME
- Publication number 20240023357
- Publication date Jan 18, 2024
- National Tsing-Hua University
- Chang-Wei YEH
- B82 - NANO-TECHNOLOGY
Information Patent Application
ELECTRODE STRUCTURE AND QUANTUM DOT ELECTROLUMINESCENT DEVICE
- Publication number 20230380201
- Publication date Nov 23, 2023
- National Tsing-Hua University
- HSUEH-SHIH CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nanostructure Field-Effect Transistor Device and Method of Forming
- Publication number 20230369124
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ERASABLE PROGRAMMABLE NON-VOLATILE MEMORY CELL
- Publication number 20230328978
- Publication date Oct 12, 2023
- eMemory Technology Inc.
- Wein-Town SUN
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor Device Having Doped Gate Dielectric Layer and Method...
- Publication number 20230178601
- Publication date Jun 8, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Gate Structures and Methods of Forming the Same
- Publication number 20230163129
- Publication date May 25, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsueh-Ju Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ERASABLE PROGRAMMABLE SINGLE-PLOY NON-VOLATILE MEMORY CELL AND ASSO...
- Publication number 20230157017
- Publication date May 18, 2023
- EMEMORY TECHNOLOGY INC.
- Hsueh-Wei CHEN
- G11 - INFORMATION STORAGE
Information Patent Application
ERASABLE PROGRAMMABLE SINGLE-POLY NON-VOLATILE MEMORY CELL AND ASSO...
- Publication number 20230119398
- Publication date Apr 20, 2023
- EMEMORY TECHNOLOGY INC.
- Hsueh-Wei CHEN
- G11 - INFORMATION STORAGE
Information Patent Application
Multiple Gate Field-Effect Transistors Having Various Gate Oxide Th...
- Publication number 20230061018
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
QUANTUM DOT STRUCTURE WITH EXCELLENT STABILITY AND METHOD FOR MAKIN...
- Publication number 20220267672
- Publication date Aug 25, 2022
- National Tsing-Hua University
- Chang-Wei YEH
- B82 - NANO-TECHNOLOGY
Information Patent Application
MEMORY CELL OF NON-VOLATILE MEMORY
- Publication number 20220085038
- Publication date Mar 17, 2022
- EMEMORY TECHNOLOGY INC.
- Ying-Je CHEN
- G11 - INFORMATION STORAGE
Information Patent Application
Nanostructure Field-Effect Transistor Device and Method of Forming
- Publication number 20220084889
- Publication date Mar 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20210392747
- Publication date Dec 16, 2021
- National Taiwan University of Science and Technology
- Chen-Hao Wang
- B33 - ADDITIVE MANUFACTURING TECHNOLOGY
Information Patent Application
CLUSTERED REACTION SYSTEM
- Publication number 20210363641
- Publication date Nov 25, 2021
- National Tsing-Hua University
- Shih-Jung HO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
COMPOSITE QUANTUM DOT, METHOD FOR PREPARING THE SAME, AND METHOD FO...
- Publication number 20210340438
- Publication date Nov 4, 2021
- National Tsing-Hua University
- Hsueh-Shih CHEN
- B82 - NANO-TECHNOLOGY
Information Patent Application
QUANTUM DOT
- Publication number 20210340440
- Publication date Nov 4, 2021
- National Tsing-Hua University
- Hsueh-Shih CHEN
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method for canceling crosstalk of QLED display panel and QLED displ...
- Publication number 20210319741
- Publication date Oct 14, 2021
- National Tsing Hua University
- HSUEH-SHIH CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
White-light QLED component, backlight module and illumination appar...
- Publication number 20210320271
- Publication date Oct 14, 2021
- National Tsing Hua University
- HSUEH-SHIH CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING INKJET-PRINTED ENCAPSULATED QUANTUM DOTS, LIGHT C...
- Publication number 20210320092
- Publication date Oct 14, 2021
- National Tsing Hua University
- HSUEH-SHIH CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMMUNICATION SYSTEM, DATA TRANSMISSION METHOD AND BASE STATION THE...
- Publication number 20210314091
- Publication date Oct 7, 2021
- ARCADYAN TECHNOLOGY CORPORATION
- Hsueh-Chien CHEN
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
RESISTIVE RANDOM-ACCESS MEMORY CELL AND ASSOCIATED CELL ARRAY STRUC...
- Publication number 20210249601
- Publication date Aug 12, 2021
- EMEMORY TECHNOLOGY INC.
- Tsung-Mu LAI
- H01 - BASIC ELECTRIC ELEMENTS

Hsueh-Wei Chen

Person

Patents Grantslast 30 patents

Incorporating nitrogen in dipole engineering for multi-threshold vo...

Erasable programmable single-ploy non-volatile memory cell and asso...

Multiple gate field-effect transistors having various gate oxide th...

Memory cell of non-volatile memory

Circuit substrate and method for manufacturing the same

Erasable programmable single-poly non-volatile memory cell and asso...

Nanostructure field-effect transistor device and method of forming

Quantum dot structure with excellent stability and method for makin...

Resistive random-access memory cell and associated cell array struc...

Clustered reaction system

Communication system, data transmission method and base station the...

Nanocrystal with a large stokes shift and a method for preparing th...

Method for canceling crosstalk of QLED display panel and QLED displ...

White-light QLED component, backlight module and illumination appar...

Quantum dot

Memory cell with isolated well region and associated non-volatile m...

Method for making inkjet-printed encapsulated quantum dots, light c...

Erasable programmable non-volatile memory

Light conversion material with high conversion efficiency

Light-diffusion quantum dot nanostructure with voids and LED compon...

Methods of fabricating semiconductor devices having isolation struc...

Single-poly nonvolatile memory unit

Combination solution of colloidal quantum dots and method for makin...

Anti-counterfeit security verification method and device using quan...

Light conversion material with light reflective structure and light...

Quantum dot luminophore

Transparent conductive film

Nanowire composite structure and methods of forming the same, sensi...

Erasable programmable non-volatile memory

Non-contact reactor and nanocrystal fabrication system having the same

Patents Applicationslast 30 patents

MULTI-VT SOLUTION FOR BOTTOM AND TOP TIER DEVICE

Tuning Work Functions of Complementary Transistors

Incorporating Nitrogen in Dipole Engineering for Multi-Threshold Vo...

Incorporating Nitrogen in Dipole Engineering for Multi-Threshold Vo...

MULTIPLE GATE FIELD-EFFECT TRANSISTORS HAVING VARIOUS GATE OXIDE TH...

COMPOSITE QUANTUM DOT, METHOD FOR PREPARING THE SAME, AND METHOD FO...

COMPOSITE QUANTUM DOT, METHOD FOR PREPARING THE SAME, AND METHOD FO...

Volume-less Fluorine Incorporation Method

SEMICONDUCTOR QUANTUM DOT STRUCTURE AND METHOD FOR MAKING THE SAME

QUANTUM DOT AND METHOD FOR PREPARING THE SAME

ELECTRODE STRUCTURE AND QUANTUM DOT ELECTROLUMINESCENT DEVICE

Nanostructure Field-Effect Transistor Device and Method of Forming

ERASABLE PROGRAMMABLE NON-VOLATILE MEMORY CELL

Semiconductor Device Having Doped Gate Dielectric Layer and Method...

Transistor Gate Structures and Methods of Forming the Same

ERASABLE PROGRAMMABLE SINGLE-PLOY NON-VOLATILE MEMORY CELL AND ASSO...

ERASABLE PROGRAMMABLE SINGLE-POLY NON-VOLATILE MEMORY CELL AND ASSO...

Multiple Gate Field-Effect Transistors Having Various Gate Oxide Th...

QUANTUM DOT STRUCTURE WITH EXCELLENT STABILITY AND METHOD FOR MAKIN...

MEMORY CELL OF NON-VOLATILE MEMORY

Nanostructure Field-Effect Transistor Device and Method of Forming

CIRCUIT SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

CLUSTERED REACTION SYSTEM

COMPOSITE QUANTUM DOT, METHOD FOR PREPARING THE SAME, AND METHOD FO...

QUANTUM DOT

Method for canceling crosstalk of QLED display panel and QLED displ...

White-light QLED component, backlight module and illumination appar...

METHOD FOR MAKING INKJET-PRINTED ENCAPSULATED QUANTUM DOTS, LIGHT C...

COMMUNICATION SYSTEM, DATA TRANSMISSION METHOD AND BASE STATION THE...

RESISTIVE RANDOM-ACCESS MEMORY CELL AND ASSOCIATED CELL ARRAY STRUC...