Hsueh Wen Tsau

Person

Zhunan Township, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing a semiconductor device including capping la...
- Patent number 12,046,657
- Issue date Jul 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsueh Wen Tsau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure
- Patent number 12,040,364
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsueh-Wen Tsau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact plug with impurity variation
- Patent number 12,033,893
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Geometry for threshold voltage tuning on semiconductor device
- Patent number 11,935,957
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance fill metal layer material as stressor in metal gates
- Patent number 11,923,367
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mrunal A Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tuning threshold voltage in field-effect transistors
- Patent number 11,855,181
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsueh Wen Tsau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact plug with impurity variation
- Patent number 11,769,694
- Issue date Sep 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure
- Patent number 11,626,493
- Issue date Apr 11, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsueh-Wen Tsau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact plug with impurity variation
- Patent number 11,404,312
- Issue date Aug 2, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance fill metal layer material as stressor in metal gates
- Patent number 11,404,416
- Issue date Aug 2, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mrunal A Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tuning threshold voltage in field-effect transistors
- Patent number 11,257,923
- Issue date Feb 22, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsueh Wen Tsau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Copper contact plugs with barrier layers
- Patent number 11,251,131
- Issue date Feb 15, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Li-Lin Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having gate dielectric and inhibitor film over...
- Patent number 11,211,465
- Issue date Dec 28, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Mrunal A. Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate scheme for device and methods of forming
- Patent number 11,127,836
- Issue date Sep 21, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Geometry for threshold voltage tuning on semiconductor device
- Patent number 11,094,828
- Issue date Aug 17, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and method for forming the same
- Patent number 11,038,029
- Issue date Jun 15, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsueh-Wen Tsau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor device structure
- Patent number 10,985,265
- Issue date Apr 20, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor arrangement and method of manufacture
- Patent number 10,978,357
- Issue date Apr 13, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- I-Ming Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 10,867,848
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a metal gate electrode stack
- Patent number 10,818,767
- Issue date Oct 27, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsueh Wen Tsau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate replacement structures in semiconductor devices
- Patent number 10,741,400
- Issue date Aug 11, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsueh Wen Tsau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Copper contact plugs with barrier layers
- Patent number 10,700,010
- Issue date Jun 30, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Li-Lin Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Geometry for threshold voltage tuning on semiconductor device
- Patent number 10,692,770
- Issue date Jun 23, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having gate body and inhibitor film between co...
- Patent number 10,510,854
- Issue date Dec 17, 2019
- Taiwan Semiconductor Manufacturing Company Limited
- Mrunal A. Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pre-deposition treatment and atomic layer deposition (ALD) process...
- Patent number 10,297,453
- Issue date May 21, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Yen Tsai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Metal gate scheme for device and methods of forming
- Patent number 10,283,619
- Issue date May 7, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor (FinFET)
- Patent number 10,256,311
- Issue date Apr 9, 2019
- Taiwan Semiconductor Manufacturing Company Limited
- Hsueh-Wen Tsau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 10,170,417
- Issue date Jan 1, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of gate replacement in semiconductor devices
- Patent number 10,128,237
- Issue date Nov 13, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsueh Wen Tsau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with sidewall passivation and method of making
- Patent number 10,014,382
- Issue date Jul 3, 2018
- Taiwan Semiconductor Manufacturing Company Limited
- Mrunal A. Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LOW RESISTANCE FILL METAL LAYER MATERIAL AS STRESSOR IN METAL GATES
- Publication number 20240258318
- Publication date Aug 1, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Mrunal A Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tuning Threshold Voltage in Field-Effect Transistors
- Publication number 20240105813
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Hsueh Wen Tsau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE
- Publication number 20230246080
- Publication date Aug 3, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsueh-Wen TSAU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Resistance Fill Metal Layer Material as Stressor in Metal Gates
- Publication number 20220384439
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Mrunal A Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tuning Threshold Voltage in Field-Effect Transistors
- Publication number 20220181467
- Publication date Jun 9, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Hsueh Wen Tsau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Geometry for Threshold Voltage Tuning on Semiconductor Device
- Publication number 20210367076
- Publication date Nov 25, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE
- Publication number 20210305376
- Publication date Sep 30, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsueh-Wen TSAU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Resistance Fill Metal Layer Material as Stressor in Metal Gates
- Publication number 20210183858
- Publication date Jun 17, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Mrunal A Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE
- Publication number 20210057550
- Publication date Feb 25, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Liang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
- Publication number 20210036123
- Publication date Feb 4, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsueh Wen TSAU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Geometry for Threshold Voltage Tuning on Semiconductor Device
- Publication number 20200321252
- Publication date Oct 8, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Copper Contact Plugs with Barrier Layers
- Publication number 20200321279
- Publication date Oct 8, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Li-Lin Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ARRANGEMENT AND METHOD OF MANUFACTURE
- Publication number 20200176328
- Publication date Jun 4, 2020
- Taiwan Semiconductor Manufacturing Company Limited
- I-Ming CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20200152746
- Publication date May 14, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsueh-Wen TSAU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tuning Threshold Voltage in Field-Effect Transistors
- Publication number 20200119164
- Publication date Apr 16, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Hsueh Wen Tsau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SIDEWALL PASSIVATION AND METHOD OF MAKING
- Publication number 20200119153
- Publication date Apr 16, 2020
- Taiwan Semiconductor Manufacturing Company Limited
- Mrunal A. KHADERBAD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Geometry for Threshold Voltage Tuning on Semiconductor Device
- Publication number 20190371674
- Publication date Dec 5, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20190333808
- Publication date Oct 31, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal Gate Scheme for Device and Methods of Forming
- Publication number 20190259853
- Publication date Aug 22, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Gate Replacement in Semiconductor Devices
- Publication number 20190067279
- Publication date Feb 28, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsueh Wen TSAU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND SIDEWALL PASSIVATION AND METHOD OF MAKING
- Publication number 20180308944
- Publication date Oct 25, 2018
- Taiwan Semiconductor Manufacturing Company Limited
- Mrunal A. KHADERBAD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Pre-Deposition Treatment and Atomic Layer Deposition (ALD) Process...
- Publication number 20180218912
- Publication date Aug 2, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Yen Tsai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Metal Gate Scheme for Device and Methods of Forming
- Publication number 20180145151
- Publication date May 24, 2018
- Taiwan Semiconductor Manufacturing company Ltd.
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20180090431
- Publication date Mar 29, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Chiang WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF GATE REPLACEMENT IN SEMICONDUCTOR DEVICES
- Publication number 20170373058
- Publication date Dec 28, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsueh Wen TSAU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20170330829
- Publication date Nov 16, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Chiang WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Copper Contact Plugs with Barrier Layers
- Publication number 20170207167
- Publication date Jul 20, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Li-Lin Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal Gate Scheme for Device and Methods of Forming
- Publication number 20170092740
- Publication date Mar 30, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRE-DEPOSITION TREATMENT AND ATOMIC LAYER DEPOSITION (ALD) PROCESS...
- Publication number 20170032972
- Publication date Feb 2, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Yen Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field Effect Transistor (FinFET)
- Publication number 20160155811
- Publication date Jun 2, 2016
- Taiwan Semiconductor Manufacturing Company Limited
- HSUEH-WEN TSAU
- H01 - BASIC ELECTRIC ELEMENTS

Hsueh Wen Tsau

Person

Patents Grantslast 30 patents

Method of manufacturing a semiconductor device including capping la...

Semiconductor device structure

Contact plug with impurity variation

Geometry for threshold voltage tuning on semiconductor device

Low resistance fill metal layer material as stressor in metal gates

Tuning threshold voltage in field-effect transistors

Contact plug with impurity variation

Semiconductor device structure

Contact plug with impurity variation

Low resistance fill metal layer material as stressor in metal gates

Tuning threshold voltage in field-effect transistors

Copper contact plugs with barrier layers

Semiconductor device having gate dielectric and inhibitor film over...

Metal gate scheme for device and methods of forming

Geometry for threshold voltage tuning on semiconductor device

Semiconductor device structure and method for forming the same

Method for forming semiconductor device structure

Semiconductor arrangement and method of manufacture

Semiconductor device and method

Semiconductor device having a metal gate electrode stack

Gate replacement structures in semiconductor devices

Copper contact plugs with barrier layers

Geometry for threshold voltage tuning on semiconductor device

Semiconductor device having gate body and inhibitor film between co...

Pre-deposition treatment and atomic layer deposition (ALD) process...

Metal gate scheme for device and methods of forming

Fin field effect transistor (FinFET)

Semiconductor structure

Methods of gate replacement in semiconductor devices

Semiconductor device with sidewall passivation and method of making

Patents Applicationslast 30 patents

LOW RESISTANCE FILL METAL LAYER MATERIAL AS STRESSOR IN METAL GATES

Tuning Threshold Voltage in Field-Effect Transistors

SEMICONDUCTOR DEVICE STRUCTURE

Low Resistance Fill Metal Layer Material as Stressor in Metal Gates

Tuning Threshold Voltage in Field-Effect Transistors

Geometry for Threshold Voltage Tuning on Semiconductor Device

SEMICONDUCTOR DEVICE STRUCTURE

Low Resistance Fill Metal Layer Material as Stressor in Metal Gates

METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

Geometry for Threshold Voltage Tuning on Semiconductor Device

Copper Contact Plugs with Barrier Layers

SEMICONDUCTOR ARRANGEMENT AND METHOD OF MANUFACTURE

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

Tuning Threshold Voltage in Field-Effect Transistors

SEMICONDUCTOR DEVICE WITH SIDEWALL PASSIVATION AND METHOD OF MAKING

Geometry for Threshold Voltage Tuning on Semiconductor Device

Semiconductor Device and Method

Metal Gate Scheme for Device and Methods of Forming

Methods of Gate Replacement in Semiconductor Devices

SEMICONDUCTOR DEVICE AND SIDEWALL PASSIVATION AND METHOD OF MAKING

Pre-Deposition Treatment and Atomic Layer Deposition (ALD) Process...

Metal Gate Scheme for Device and Methods of Forming

SEMICONDUCTOR STRUCTURE

METHODS OF GATE REPLACEMENT IN SEMICONDUCTOR DEVICES

SEMICONDUCTOR STRUCTURE AND METHODS OF FORMING THE SAME

Copper Contact Plugs with Barrier Layers

Metal Gate Scheme for Device and Methods of Forming

PRE-DEPOSITION TREATMENT AND ATOMIC LAYER DEPOSITION (ALD) PROCESS...

Fin Field Effect Transistor (FinFET)