Hua Shen

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for forming crystalline silicon nitride
- Patent number 6,707,086
- Issue date Mar 16, 2004
- Infineon Technologies AG
- Rajarao Jammy
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Structures and methods for selectively applying a well bias to port...
- Patent number 6,621,325
- Issue date Sep 16, 2003
- Xilinx, Inc.
- Michael J. Hart
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method of forming an integrated circuit comprising a self aligned t...
- Patent number 6,537,870
- Issue date Mar 25, 2003
- Infineon Technologies AG
- Hua Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for removal of hard mask used to define noble metal electrode
- Patent number 6,420,272
- Issue date Jul 16, 2002
- Infineon Technologies A G
- Hua Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming an integrated barrier/plug for a stacked capacitor
- Patent number 6,420,267
- Issue date Jul 16, 2002
- Infineon Technologies AG
- Chenting Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hydrogen peroxide and acid etchant for a wet etch process
- Patent number 6,379,577
- Issue date Apr 30, 2002
- International Business Machines Corporation
- Hiroyuki Akatsu
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Semiconductor structure and manufacturing method
- Patent number 6,365,328
- Issue date Apr 2, 2002
- Infineon Technologies North America Corp.
- Hua Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor stack structure and method of fabricating description
- Patent number 6,339,007
- Issue date Jan 15, 2002
- International Business Machines Corporation
- Yun-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stack capacitor with improved plug conductivity
- Patent number 6,313,495
- Issue date Nov 6, 2001
- Siemens Aktiengesellschaft
- Hua Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Easy to remove hard mask layer for semiconductor device fabrication
- Patent number 6,261,967
- Issue date Jul 17, 2001
- Infineon Technologies North America Corp.
- Satish D. Athavale
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High dielectric constant material deposition to achieve high capaci...
- Patent number 6,207,584
- Issue date Mar 27, 2001
- International Business Machines Corp.
- Hua Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tapered electrode for stacked capacitors
- Patent number 6,165,864
- Issue date Dec 26, 2000
- Siemens Aktiengesellschaft
- Hua Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked capacitator memory cell and method of fabrication
- Patent number 6,136,660
- Issue date Oct 24, 2000
- Siemens Aktiengesellschaft
- Hua Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature diffusion process for dopant concentration enhancement
- Patent number 6,057,216
- Issue date May 2, 2000
- International Business Machines Corporation
- Laertis Economikos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming stack capacitor with improved plug conductivity
- Patent number 6,046,059
- Issue date Apr 4, 2000
- Siemens Aktiengesellschaft
- Hua Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a capacitor
- Patent number 6,001,684
- Issue date Dec 14, 1999
- Siemens Aktiengesellschaft
- Hua Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor structure having a crystall...
- Patent number 5,966,624
- Issue date Oct 12, 1999
- Siemens Aktiengesellschaft
- Hua Shen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method for forming a (111) oriented BSTO thin film layer for high d...
- Publication number 20050196917
- Publication date Sep 8, 2005
- Jingyu Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structures and methods for selectively applying a well bias to port...
- Publication number 20030053335
- Publication date Mar 20, 2003
- Xilinx, Inc.
- Michael J. Hart
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD FOR FORMING CRYSTALLINE SILICON NITRIDE
- Publication number 20020137362
- Publication date Sep 26, 2002
- RAJARAO JAMMY
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
HYDROGEN PEROXIDE AND ACID ETCHANT FOR A WET ETCH PROCESS
- Publication number 20010037995
- Publication date Nov 8, 2001
- HIROYUKI AKATSU
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES

Person

Patents Grantslast 30 patents

Method for forming crystalline silicon nitride

Structures and methods for selectively applying a well bias to port...

Method of forming an integrated circuit comprising a self aligned t...

Method for removal of hard mask used to define noble metal electrode

Method for forming an integrated barrier/plug for a stacked capacitor

Hydrogen peroxide and acid etchant for a wet etch process

Semiconductor structure and manufacturing method

Capacitor stack structure and method of fabricating description

Stack capacitor with improved plug conductivity

Easy to remove hard mask layer for semiconductor device fabrication

High dielectric constant material deposition to achieve high capaci...

Tapered electrode for stacked capacitors

Stacked capacitator memory cell and method of fabrication

Low temperature diffusion process for dopant concentration enhancement

Method of forming stack capacitor with improved plug conductivity

Method for forming a capacitor

Method of manufacturing a semiconductor structure having a crystall...

Patents Applicationslast 30 patents

Method for forming a (111) oriented BSTO thin film layer for high d...

Structures and methods for selectively applying a well bias to port...

METHOD FOR FORMING CRYSTALLINE SILICON NITRIDE

HYDROGEN PEROXIDE AND ACID ETCHANT FOR A WET ETCH PROCESS