Huai-Yu Cheng

Person

White Plains, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Mitigating moisture driven degradation of silicon doped chalcogenides
- Patent number 11,889,771
- Issue date Jan 30, 2024
- International Business Machines Corporation
- Cheng-Wei Cheng
Information Patent Grant
High thermal stability SiOx doped GeSbTe materials suitable for emb...
- Patent number 11,362,276
- Issue date Jun 14, 2022
- Macronix International Co., Ltd.
- Huai-Yu Cheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and memory cell
- Patent number 11,289,540
- Issue date Mar 29, 2022
- Macronix International Co., Ltd.
- Huai-Yu Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Suppressing oxidation of silicon germanium selenium arsenide material
- Patent number 11,271,155
- Issue date Mar 8, 2022
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
C—As—Se—Ge ovonic materials for selector devices and memory devices...
- Patent number 11,158,787
- Issue date Oct 26, 2021
- Macronix International Co., Ltd.
- Huai-Yu Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superlattice-like switching devices
- Patent number 10,541,271
- Issue date Jan 21, 2020
- Macronix International Co., Ltd.
- Huai-Yu Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Te-free AsSeGe chalcogenides for selector devices and memory device...
- Patent number 10,374,009
- Issue date Aug 6, 2019
- Macronix International Co., Ltd.
- Huai-Yu Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric doped, Sb-rich GST phase change memory
- Patent number 10,050,196
- Issue date Aug 14, 2018
- Macronix International Co., Ltd.
- Huai-Yu Cheng
- G11 - INFORMATION STORAGE
Information Patent Grant
GaSbGe phase change memory materials
- Patent number 9,917,252
- Issue date Mar 13, 2018
- Macronix International Co., Ltd.
- Huai-Yu Cheng
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Phase change storage device with multiple serially connected storag...
- Patent number 9,882,126
- Issue date Jan 30, 2018
- International Business Machines Corporation
- Matthew J. BrightSky
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory cell with improved phase change material
- Patent number 9,653,683
- Issue date May 16, 2017
- International Business Machines Corporation
- Huai-Yu Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory cell with improved phase change material
- Patent number 9,257,643
- Issue date Feb 9, 2016
- International Business Machines Corporation
- Huai-Yu Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory material and system for embedded memory applica...
- Patent number 9,214,229
- Issue date Dec 15, 2015
- Macronix International Co., Ltd.
- Huai-Yu Cheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Ge-Rich GST-212 phase change memory materials
- Patent number 8,946,666
- Issue date Feb 3, 2015
- Macronix International Co., Ltd.
- Huai-Yu Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stressed phase change materials
- Patent number 8,932,901
- Issue date Jan 13, 2015
- Macronix International Co., Ltd.
- Huai-Yu Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making memory cell by melting phase change material in c...
- Patent number 8,916,414
- Issue date Dec 23, 2014
- Macronix International Co., Ltd.
- Huai-Yu Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite target sputtering for forming doped phase change materials
- Patent number 8,772,747
- Issue date Jul 8, 2014
- Macronix International Co., Ltd.
- Huai-Yu Cheng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
MITIGATING MOISTURE DRIVEN DEGRADATION OF SILICON DOPED CHALCOGENIDES
- Publication number 20220209113
- Publication date Jun 30, 2022
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTOR DEVICES INCLUDING S-DOPED AsSeGeSi CHALCOGENIDES
- Publication number 20220123209
- Publication date Apr 21, 2022
- International Business Machines Corporation
- Huai-Yu CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH THERMAL STABILITY SiOX DOPED GeSbTe MATERIALS SUITABLE FOR EMB...
- Publication number 20210305507
- Publication date Sep 30, 2021
- Macronix International Co., Ltd.
- Huai-Yu CHENG
- G11 - INFORMATION STORAGE
Information Patent Application
SUPPRESSING OXIDATION OF SILICON GERMANIUM SELENIUM ARSENIDE MATERIAL
- Publication number 20210288251
- Publication date Sep 16, 2021
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MEMORY CELL
- Publication number 20210210554
- Publication date Jul 8, 2021
- Macronix International Co., Ltd.
- Huai-Yu CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAsSeGe OVONIC MATERIALS FOR SELECTOR DEVICES AND MEMORY DEVICES US...
- Publication number 20210184112
- Publication date Jun 17, 2021
- Macronix International Co., Ltd.
- Huai-Yu CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BARRIER LAYER FOR SELECTOR DEVICES AND MEMORY DEVICES USING SAME
- Publication number 20200295083
- Publication date Sep 17, 2020
- Macronix International Co., Ltd.
- Huai-Yu CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERLATTICE-LIKE SWITCHING DEVICES
- Publication number 20190115393
- Publication date Apr 18, 2019
- Macronix International Co., Ltd.
- Huai-Yu CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THRESHOLD VOLTAGE CONTROL OF MEMORY CELL SELECTOR FOR PHASE CHANGE...
- Publication number 20180331284
- Publication date Nov 15, 2018
- International Business Machines Corporation
- Matthew J. BrightSky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE STORAGE DEVICE WITH MULTIPLE SERIALLY CONNECTED STORAG...
- Publication number 20170294578
- Publication date Oct 12, 2017
- International Business Machines Corporation
- Matthew J. BrightSky
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE MEMORY HAVING A COMPOSITE MEMORY ELEMENT
- Publication number 20170263863
- Publication date Sep 14, 2017
- Macronix International Co., Ltd.
- Hsiang-Lan LUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaSbGe PHASE CHANGE MEMORY MATERIALS
- Publication number 20160372661
- Publication date Dec 22, 2016
- Macronix International Co., Ltd.
- HUAI-YU CHENG
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
PHASE CHANGE MEMORY CELL WITH IMPROVED PHASE CHANGE MATERIAL
- Publication number 20160118582
- Publication date Apr 28, 2016
- International Business Machines Corporation
- Huai-Yu Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY CELL WITH IMPROVED PHASE CHANGE MATERIAL
- Publication number 20150048291
- Publication date Feb 19, 2015
- Macronix International Company, Ltd.
- Huai-Yu Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY MATERIAL AND SYSTEM FOR EMBEDDED MEMORY APPLICA...
- Publication number 20140376309
- Publication date Dec 25, 2014
- Macronix International Co., Ltd.
- HUAI-YU CHENG
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR MAKING MEMORY CELL BY MELTING PHASE CHANGE MATERIAL IN C...
- Publication number 20140264240
- Publication date Sep 18, 2014
- Macronix International Co., Ltd.
- Huai-Yu CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE TARGET SPUTTERING FOR FORMING DOPED PHASE CHANGE MATERIALS
- Publication number 20130234093
- Publication date Sep 12, 2013
- International Business Machines Corporation
- HUAI-YU CHENG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Ge-RICH GST-212 PHASE CHANGE MEMORY MATERIALS
- Publication number 20120326111
- Publication date Dec 27, 2012
- Macronix International Co., Ltd.
- Huai-Yu Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Huai-Yu Cheng

Person

Patents Grantslast 30 patents

Mitigating moisture driven degradation of silicon doped chalcogenides

High thermal stability SiOx doped GeSbTe materials suitable for emb...

Semiconductor device and memory cell

Suppressing oxidation of silicon germanium selenium arsenide material

C—As—Se—Ge ovonic materials for selector devices and memory devices...

Superlattice-like switching devices

Te-free AsSeGe chalcogenides for selector devices and memory device...

Dielectric doped, Sb-rich GST phase change memory

GaSbGe phase change memory materials

Phase change storage device with multiple serially connected storag...

Phase change memory cell with improved phase change material

Phase change memory cell with improved phase change material

Phase change memory material and system for embedded memory applica...

Ge-Rich GST-212 phase change memory materials

Stressed phase change materials

Method for making memory cell by melting phase change material in c...

Composite target sputtering for forming doped phase change materials

Patents Applicationslast 30 patents

MITIGATING MOISTURE DRIVEN DEGRADATION OF SILICON DOPED CHALCOGENIDES

SELECTOR DEVICES INCLUDING S-DOPED AsSeGeSi CHALCOGENIDES

HIGH THERMAL STABILITY SiOX DOPED GeSbTe MATERIALS SUITABLE FOR EMB...

SUPPRESSING OXIDATION OF SILICON GERMANIUM SELENIUM ARSENIDE MATERIAL

SEMICONDUCTOR DEVICE AND MEMORY CELL

CAsSeGe OVONIC MATERIALS FOR SELECTOR DEVICES AND MEMORY DEVICES US...

BARRIER LAYER FOR SELECTOR DEVICES AND MEMORY DEVICES USING SAME

SUPERLATTICE-LIKE SWITCHING DEVICES

THRESHOLD VOLTAGE CONTROL OF MEMORY CELL SELECTOR FOR PHASE CHANGE...

PHASE CHANGE STORAGE DEVICE WITH MULTIPLE SERIALLY CONNECTED STORAG...

PHASE CHANGE MEMORY HAVING A COMPOSITE MEMORY ELEMENT

GaSbGe PHASE CHANGE MEMORY MATERIALS

PHASE CHANGE MEMORY CELL WITH IMPROVED PHASE CHANGE MATERIAL

PHASE CHANGE MEMORY CELL WITH IMPROVED PHASE CHANGE MATERIAL

PHASE CHANGE MEMORY MATERIAL AND SYSTEM FOR EMBEDDED MEMORY APPLICA...

METHOD FOR MAKING MEMORY CELL BY MELTING PHASE CHANGE MATERIAL IN C...

COMPOSITE TARGET SPUTTERING FOR FORMING DOPED PHASE CHANGE MATERIALS

Ge-RICH GST-212 PHASE CHANGE MEMORY MATERIALS