Huan-Tsung Huang

Person

Hsin-Chu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Epi block structure in semiconductor product providing high breakdo...
- Patent number 11,621,351
- Issue date Apr 4, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Hsin Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epi block structure in semiconductor product providing high breakdo...
- Patent number 10,998,443
- Issue date May 4, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Hsin Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Decoding device and method for absolute positioning code
- Patent number 9,871,595
- Issue date Jan 16, 2018
- Industrial Technology Research Institute
- Chien-Wen Chen
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Fin-type resistor
- Patent number 9,812,444
- Issue date Nov 7, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Hsin Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-type resistor
- Patent number 9,691,758
- Issue date Jun 27, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Hsin Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with dielectric-sealed doped region
- Patent number 9,443,925
- Issue date Sep 13, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huan-Tsung Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with dielectric-sealed doped region
- Patent number 9,136,329
- Issue date Sep 15, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huan-Tsung Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with metal gate
- Patent number 8,754,487
- Issue date Jun 17, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuri Masuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local charge and work function engineering on MOSFET
- Patent number 8,679,926
- Issue date Mar 25, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huan-Tsung Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with dielectric-sealed doped region
- Patent number 8,415,749
- Issue date Apr 9, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huan-Tsung Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor performance improving method with metal gate
- Patent number 8,357,581
- Issue date Jan 22, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuri Masuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to improve dielectric quality in high-k metal gate technology
- Patent number 8,324,090
- Issue date Dec 4, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuri Masuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local charge and work function engineering on MOSFET
- Patent number 8,030,718
- Issue date Oct 4, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huan-Tsung Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor performance improving method with metal gate
- Patent number 8,012,817
- Issue date Sep 6, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuri Masuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicided metal gate for multi-threshold voltage configuration
- Patent number 7,768,072
- Issue date Aug 3, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ching-Wei Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a MOS device with reduced transient enhanced dif...
- Patent number 7,759,210
- Issue date Jul 20, 2010
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Huan-Tsung Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor layout for standard cell with optimized mechanical stres...
- Patent number 7,321,139
- Issue date Jan 22, 2008
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Mi-Chang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device having an improved...
- Patent number 6,960,512
- Issue date Nov 1, 2005
- Taiwain Semiconductor Manufacturing Company, Ltd.
- Shui-Ming Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Epi Block Structure In Semiconductor Product Providing High Breakdo...
- Publication number 20210257487
- Publication date Aug 19, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Hsin HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DECODING DEVICE AND METHOD FOR ABSOLUTE POSITIONING CODE
- Publication number 20170317761
- Publication date Nov 2, 2017
- Industrial Technology Research Institute
- Chien-Wen Chen
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
EPI BLOCK STRUCTURE IN SEMICONDUCTOR PRODUCT PROVIDING HIGH BREAKDO...
- Publication number 20170301785
- Publication date Oct 19, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Hsin HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-TYPE RESISTOR
- Publication number 20170263602
- Publication date Sep 14, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Hsin HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure with Dielectric-Sealed Doped Region
- Publication number 20160005807
- Publication date Jan 7, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huan-Tsung Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure with Dielectric-Sealed Doped Region
- Publication number 20140252426
- Publication date Sep 11, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huan-Tsung Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Performance Improving Method with Metal Gate
- Publication number 20130119485
- Publication date May 16, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuri Masuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Local Charge and Work Function Engineering on MOSFET
- Publication number 20120003804
- Publication date Jan 5, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huan-Tsung Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR PERFORMANCE IMPROVING METHOD WITH METAL GATE
- Publication number 20110303991
- Publication date Dec 15, 2011
- Yuri Masuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR PERFORMANCE IMPROVING METHOD WITH METAL GATE
- Publication number 20100078733
- Publication date Apr 1, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuri Masuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL CHARGE AND WORK FUNCTION ENGINEERING ON MOSFET
- Publication number 20100065925
- Publication date Mar 18, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huan-Tsung Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO IMPROVE DIELECTRIC QUALITY IN HIGH-K METAL GATE TECHNOLOGY
- Publication number 20100052063
- Publication date Mar 4, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuri Masuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor structure with dielectric-sealed doped region
- Publication number 20080258185
- Publication date Oct 23, 2008
- Huan-Tsung Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicided metal gate for multi-threshold voltage configuration
- Publication number 20080237750
- Publication date Oct 2, 2008
- Ching-Wei Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming a most device with reduced transient enhanced di...
- Publication number 20080153238
- Publication date Jun 26, 2008
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Huan-Tsung Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor layout for standard cell with optimized mechanical stres...
- Publication number 20070284618
- Publication date Dec 13, 2007
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Mi-Chang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Double-extension formation using offset spacer
- Publication number 20070114604
- Publication date May 24, 2007
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Huan-Tsung Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and method for extraction of parasitic junction capacitan...
- Publication number 20050260776
- Publication date Nov 24, 2005
- Taiwan Semiconductor Manufacturing Co., LTD
- Yin-Pin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and structure for CMOS device with stress relaxed by ion imp...
- Publication number 20050186722
- Publication date Aug 25, 2005
- Kuan-Lun Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having improved short channel effects, and met...
- Publication number 20050026342
- Publication date Feb 3, 2005
- Ka-Hing Fung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE HAVING AN IMPROVED...
- Publication number 20040266122
- Publication date Dec 30, 2004
- Shui-Ming Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Huan-Tsung Huang

Person

Patents Grantslast 30 patents

Epi block structure in semiconductor product providing high breakdo...

Epi block structure in semiconductor product providing high breakdo...

Decoding device and method for absolute positioning code

Fin-type resistor

Fin-type resistor

Semiconductor structure with dielectric-sealed doped region

Semiconductor structure with dielectric-sealed doped region

Semiconductor device with metal gate

Local charge and work function engineering on MOSFET

Semiconductor structure with dielectric-sealed doped region

Transistor performance improving method with metal gate

Method to improve dielectric quality in high-k metal gate technology

Local charge and work function engineering on MOSFET

Transistor performance improving method with metal gate

Silicided metal gate for multi-threshold voltage configuration

Method for forming a MOS device with reduced transient enhanced dif...

Transistor layout for standard cell with optimized mechanical stres...

Method for manufacturing a semiconductor device having an improved...

Patents Applicationslast 30 patents

Epi Block Structure In Semiconductor Product Providing High Breakdo...

DECODING DEVICE AND METHOD FOR ABSOLUTE POSITIONING CODE

EPI BLOCK STRUCTURE IN SEMICONDUCTOR PRODUCT PROVIDING HIGH BREAKDO...

FIN-TYPE RESISTOR

Semiconductor Structure with Dielectric-Sealed Doped Region

Semiconductor Structure with Dielectric-Sealed Doped Region

Transistor Performance Improving Method with Metal Gate

Local Charge and Work Function Engineering on MOSFET

TRANSISTOR PERFORMANCE IMPROVING METHOD WITH METAL GATE

TRANSISTOR PERFORMANCE IMPROVING METHOD WITH METAL GATE

LOCAL CHARGE AND WORK FUNCTION ENGINEERING ON MOSFET

METHOD TO IMPROVE DIELECTRIC QUALITY IN HIGH-K METAL GATE TECHNOLOGY

Semiconductor structure with dielectric-sealed doped region

Silicided metal gate for multi-threshold voltage configuration

Method for forming a most device with reduced transient enhanced di...

Transistor layout for standard cell with optimized mechanical stres...

Double-extension formation using offset spacer

Structure and method for extraction of parasitic junction capacitan...

Method and structure for CMOS device with stress relaxed by ion imp...

Semiconductor device having improved short channel effects, and met...

METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE HAVING AN IMPROVED...