Huang Liu

Person

Malta, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method to form a fin structure on deep trenches for a semiconductor...
- Patent number 12,125,873
- Issue date Oct 22, 2024
- HeFeChip Corporation Limited
- Liang Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device for a volatile memory and method of manufactur...
- Patent number 11,244,947
- Issue date Feb 8, 2022
- HeFeChip Corporation Limited
- John Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 11,049,862
- Issue date Jun 29, 2021
- HeFeChip Corporation Limited
- John Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device with large EPI in FinFETs and method of manufacturing
- Patent number 10,910,471
- Issue date Feb 2, 2021
- GLOBALFOUNDRIES Inc.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a metal gate including de-oxidation of an oxidiz...
- Patent number 10,854,472
- Issue date Dec 1, 2020
- GLOBALFOUNDRIES Inc.
- Huang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capping structure
- Patent number 10,559,470
- Issue date Feb 11, 2020
- GLOBALFOUNDRIES Inc.
- Haigou Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Siloxane and organic-based MOL contact patterning
- Patent number 10,056,458
- Issue date Aug 21, 2018
- GLOBALFOUNDRIES Inc.
- Chang Ho Maeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through silicon via device having low stress, thin film gaps and me...
- Patent number 10,043,764
- Issue date Aug 7, 2018
- GLOBALFOUNDRIES Inc.
- Huang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming mask layers using a flowable carbon-containing...
- Patent number 9,793,169
- Issue date Oct 17, 2017
- GLOBALFOUNDRIES Inc.
- Huy Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlling within-die uniformity using doped polishing material
- Patent number 9,754,837
- Issue date Sep 5, 2017
- GLOBALFOUNDRIES Inc.
- Haigou Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dimension-controlled via formation processing
- Patent number 9,666,476
- Issue date May 30, 2017
- GLOBALFOUNDRIES Inc.
- Xiang Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming self-aligned contacts on FinFET devices
- Patent number 9,627,274
- Issue date Apr 18, 2017
- GLOBALFOUNDRIES Inc.
- Haifeng Sheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating integrated circuits using self-aligned quad...
- Patent number 9,620,380
- Issue date Apr 11, 2017
- GLOBALFOUNDRIES, INC.
- Xintuo Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Facilitating etch processing of a thin film via partial implantatio...
- Patent number 9,620,381
- Issue date Apr 11, 2017
- GLOBALFOUNDRIES Inc.
- Suraj K. Patil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Alternating space decomposition in circuit structure fabrication
- Patent number 9,606,432
- Issue date Mar 28, 2017
- GLOBALFOUNDRIES, INC.
- Guoxiang Ning
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Reducing liner corrosion during metallization of semiconductor devices
- Patent number 9,595,493
- Issue date Mar 14, 2017
- GLOBALFOUNDRIES Inc.
- Zhiguo Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for eliminating interlayer dielectric dishing and controllin...
- Patent number 9,589,807
- Issue date Mar 7, 2017
- GLOBALFOUNDRIES Inc.
- Haigou Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inhibiting diffusion of elements between material layers of a layer...
- Patent number 9,502,232
- Issue date Nov 22, 2016
- GLOBALFOUNDRIES Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits having improved gate structures and methods for...
- Patent number 9,490,129
- Issue date Nov 8, 2016
- GLOBALFOUNDRIES, INC.
- Xiang Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal resistor using FinFET-based replacement gate process
- Patent number 9,478,625
- Issue date Oct 25, 2016
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Liner and cap layer for placeholder source/drain contact structure...
- Patent number 9,466,723
- Issue date Oct 11, 2016
- GLOBALFOUNDRIES Inc.
- Haigou Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through silicon via device having low stress, thin film gaps and me...
- Patent number 9,455,188
- Issue date Sep 27, 2016
- GLOBALFOUNDRIES Inc.
- Huang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
10 nm alternative N/P doped fin for SSRW scheme
- Patent number 9,455,204
- Issue date Sep 27, 2016
- GLOBALFOUNDRIES Inc.
- Huy M. Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming air gap structure using carbon-containing spacer
- Patent number 9,443,956
- Issue date Sep 13, 2016
- GLOBALFOUNDRIES Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lithographic stack excluding SiARC and method of using same
- Patent number 9,431,528
- Issue date Aug 30, 2016
- GLOBALFOUNDRIES Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a dielectric film
- Patent number 9,418,832
- Issue date Aug 16, 2016
- Hung-Wei Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing gate height variation due to overlapping masks
- Patent number 9,401,416
- Issue date Jul 26, 2016
- GLOBALFOUNDRIES Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation integration methods and devices formed the...
- Patent number 9,385,192
- Issue date Jul 5, 2016
- GLOBALFOUNDRIES Inc.
- Hongliang Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Defect-free relaxed covering layer on semiconductor substrate with...
- Patent number 9,368,342
- Issue date Jun 14, 2016
- GLOBALFOUNDRIES Inc.
- Haigou Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits and methods of forming the same with multi-leve...
- Patent number 9,349,635
- Issue date May 24, 2016
- GLOBALFOUNDRIES, INC.
- San Leong Liew
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF
- Publication number 20240215218
- Publication date Jun 27, 2024
- HeFeChip Corporation Limited
- Liang LI
Information Patent Application
METHOD TO FORM SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE THEREOF
- Publication number 20230317526
- Publication date Oct 5, 2023
- LIANG LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO FORM A FIN STRUCTURE ON DEEP TRENCHES FOR A SEMICONDUCTOR...
- Publication number 20230317771
- Publication date Oct 5, 2023
- HeFeChip Corporation Limited
- LIANG LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20210118888
- Publication date Apr 22, 2021
- HeFeChip Corporation Limited
- John Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE WITH LARGE EPI IN FINFETS AND METHOD OF MANUFACTURING
- Publication number 20200020769
- Publication date Jan 16, 2020
- GLOBALFOUNDRIES INC.
- Jianwei PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPPING STRUCTURE
- Publication number 20190228976
- Publication date Jul 25, 2019
- GLOBALFOUNDRIES INC.
- Haigou HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ISOLATION
- Publication number 20190139830
- Publication date May 9, 2019
- GLOBALFOUNDRIES INC.
- Ruilong XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING MASK LAYERS USING A FLOWABLE CARBON-CONTAINING...
- Publication number 20180005893
- Publication date Jan 4, 2018
- GLOBALFOUNDRIES INC.
- Huy Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROLLING WITHIN-DIE UNIFORMITY USING DOPED POLISHING MATERIAL
- Publication number 20170338226
- Publication date Nov 23, 2017
- GLOBALFOUNDRIES INC.
- Haigou Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILOXANE AND ORGANIC-BASED MOL CONTACT PATTERNING
- Publication number 20170200792
- Publication date Jul 13, 2017
- GLOBALFOUNDRIES INC.
- Chang Ho MAENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR PRODUCING INTEGRATED CIRCUITS WITH AIR GAPS AND INTEGRA...
- Publication number 20170162430
- Publication date Jun 8, 2017
- GLOBALFOUNDRIES, Inc.
- Xintuo Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING LINER CORROSION DURING METALLIZATION OF SEMICONDUCTOR DEVICES
- Publication number 20170047282
- Publication date Feb 16, 2017
- GLOBALFOUNDRIES INC.
- Zhiguo SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH SILICON VIA DEVICE HAVING LOW STRESS, THIN FILM GAPS AND ME...
- Publication number 20160372425
- Publication date Dec 22, 2016
- GLOBALFOUNDRIES Inc.
- Huang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR PREVENTING OXIDATION DAMAGE DURING FINFET FABRICATION
- Publication number 20160211373
- Publication date Jul 21, 2016
- GLOBALFOUNDRIES INC.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING AIR GAP STRUCTURE USING CARBON-CONTAINING SPACER
- Publication number 20160163816
- Publication date Jun 9, 2016
- GLOBALFOUNDRIES INC.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REDUCING GATE HEIGHT VARIATION DUE TO OVERLAPPING MASKS
- Publication number 20160163830
- Publication date Jun 9, 2016
- GLOBALFOUNDRIES, Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ACHIEVING A CRITICAL DIMENSION TARGET BASED ON RESIST CHARACTERISTICS
- Publication number 20160125121
- Publication date May 5, 2016
- Guoxiang NING
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ALTERNATING SPACE DECOMPOSITION IN CIRCUIT STRUCTURE FABRICATION
- Publication number 20160124308
- Publication date May 5, 2016
- GLOBALFOUNDRIES, Inc.
- Guoxiang NING
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
DIMENSION-CONTROLLED VIA FORMATION PROCESSING
- Publication number 20160099171
- Publication date Apr 7, 2016
- GLOBALFOUNDRIES INC.
- Xiang HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INHIBITING DIFFUSION OF ELEMENTS BETWEEN MATERIAL LAYERS OF A LAYER...
- Publication number 20160005598
- Publication date Jan 7, 2016
- GLOBALFOUNDRIES INC.
- Sipeng GU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIMENSION-CONTROLLED VIA FORMATION PROCESSING
- Publication number 20150380246
- Publication date Dec 31, 2015
- GLOBALFOUNDRIES INC.
- Xiang HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIFORM GATE HEIGHT FOR MIXED-TYPE NON-PLANAR SEMICONDUCTOR DEVICES
- Publication number 20150364336
- Publication date Dec 17, 2015
- GLOBALFOUNDRIES INC.
- Hong YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF CARBON-RICH CONTACT LINER MATERIAL
- Publication number 20150357285
- Publication date Dec 10, 2015
- GLOBALFOUNDRIES INC.
- Huy CAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING DEFECT-FREE SEMICONDUCTOR STRUCTURES
- Publication number 20150357292
- Publication date Dec 10, 2015
- GLOBALFOUNDRIES INC.
- Hung-Wei LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW TRENCH ISOLATION INTEGRATION METHODS AND DEVICES FORMED THE...
- Publication number 20150333121
- Publication date Nov 19, 2015
- GLOBALFOUNDRIES INC.
- Hongliang Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LITHOGRAPHIC STACK EXCLUDING SiARC AND METHOD OF USING SAME
- Publication number 20150332934
- Publication date Nov 19, 2015
- GLOBALFOUNDRIES INC.
- Hong YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED SILICON GOUGING DURING OXIDE SPACER FORMATION
- Publication number 20150325445
- Publication date Nov 12, 2015
- GLOBALFOUNDRIES INC.
- Jiehui SHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS HAVING IMPROVED GATE STRUCTURES AND METHODS FOR...
- Publication number 20150325482
- Publication date Nov 12, 2015
- GLOBALFOUNDRIES, Inc.
- Xiang Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEFECT-FREE RELAXED COVERING LAYER ON SEMICONDUCTOR SUBSTRATE WITH...
- Publication number 20150295047
- Publication date Oct 15, 2015
- GLOBALFOUNDRIES INC.
- Haigou HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF SEMICONDUCTOR STRUCTURES USING OXIDIZED POLYCRYSTALL...
- Publication number 20150270159
- Publication date Sep 24, 2015
- GLOBALFOUNDRIES INC.
- Haigou HUANG
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Method to form a fin structure on deep trenches for a semiconductor...

Semiconductor device for a volatile memory and method of manufactur...

Semiconductor device and fabrication method thereof

Device with large EPI in FinFETs and method of manufacturing

Method for forming a metal gate including de-oxidation of an oxidiz...

Capping structure

Siloxane and organic-based MOL contact patterning

Through silicon via device having low stress, thin film gaps and me...

Methods for forming mask layers using a flowable carbon-containing...

Controlling within-die uniformity using doped polishing material

Dimension-controlled via formation processing

Methods of forming self-aligned contacts on FinFET devices

Methods for fabricating integrated circuits using self-aligned quad...

Facilitating etch processing of a thin film via partial implantatio...

Alternating space decomposition in circuit structure fabrication

Reducing liner corrosion during metallization of semiconductor devices

Method for eliminating interlayer dielectric dishing and controllin...

Inhibiting diffusion of elements between material layers of a layer...

Integrated circuits having improved gate structures and methods for...

Metal resistor using FinFET-based replacement gate process

Liner and cap layer for placeholder source/drain contact structure...

Through silicon via device having low stress, thin film gaps and me...

10 nm alternative N/P doped fin for SSRW scheme

Method for forming air gap structure using carbon-containing spacer

Lithographic stack excluding SiARC and method of using same

Method of forming a dielectric film

Method for reducing gate height variation due to overlapping masks

Shallow trench isolation integration methods and devices formed the...

Defect-free relaxed covering layer on semiconductor substrate with...

Integrated circuits and methods of forming the same with multi-leve...

Patents Applicationslast 30 patents

SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF

METHOD TO FORM SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE THEREOF

METHOD TO FORM A FIN STRUCTURE ON DEEP TRENCHES FOR A SEMICONDUCTOR...

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

DEVICE WITH LARGE EPI IN FINFETS AND METHOD OF MANUFACTURING

CAPPING STRUCTURE

SELF-ALIGNED GATE ISOLATION

METHODS FOR FORMING MASK LAYERS USING A FLOWABLE CARBON-CONTAINING...

CONTROLLING WITHIN-DIE UNIFORMITY USING DOPED POLISHING MATERIAL

SILOXANE AND ORGANIC-BASED MOL CONTACT PATTERNING

METHODS FOR PRODUCING INTEGRATED CIRCUITS WITH AIR GAPS AND INTEGRA...

REDUCING LINER CORROSION DURING METALLIZATION OF SEMICONDUCTOR DEVICES

THROUGH SILICON VIA DEVICE HAVING LOW STRESS, THIN FILM GAPS AND ME...

METHODS FOR PREVENTING OXIDATION DAMAGE DURING FINFET FABRICATION

METHOD FOR FORMING AIR GAP STRUCTURE USING CARBON-CONTAINING SPACER

METHOD FOR REDUCING GATE HEIGHT VARIATION DUE TO OVERLAPPING MASKS

ACHIEVING A CRITICAL DIMENSION TARGET BASED ON RESIST CHARACTERISTICS

ALTERNATING SPACE DECOMPOSITION IN CIRCUIT STRUCTURE FABRICATION

DIMENSION-CONTROLLED VIA FORMATION PROCESSING

INHIBITING DIFFUSION OF ELEMENTS BETWEEN MATERIAL LAYERS OF A LAYER...

DIMENSION-CONTROLLED VIA FORMATION PROCESSING

UNIFORM GATE HEIGHT FOR MIXED-TYPE NON-PLANAR SEMICONDUCTOR DEVICES

FORMATION OF CARBON-RICH CONTACT LINER MATERIAL

METHODS OF FABRICATING DEFECT-FREE SEMICONDUCTOR STRUCTURES

SHALLOW TRENCH ISOLATION INTEGRATION METHODS AND DEVICES FORMED THE...

LITHOGRAPHIC STACK EXCLUDING SiARC AND METHOD OF USING SAME

REDUCED SILICON GOUGING DURING OXIDE SPACER FORMATION

INTEGRATED CIRCUITS HAVING IMPROVED GATE STRUCTURES AND METHODS FOR...

DEFECT-FREE RELAXED COVERING LAYER ON SEMICONDUCTOR SUBSTRATE WITH...

FABRICATION OF SEMICONDUCTOR STRUCTURES USING OXIDIZED POLYCRYSTALL...