Hui Nie

Person

Cupertino, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Self-bypass diode function for gallium arsenide photovoltaic devices
- Patent number 11,121,272
- Issue date Sep 14, 2021
- UTICA LEASECO, LLC
- Andrew J. Ritenour
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Optoelectronic devices including heterojunction and intermediate layer
- Patent number 10,916,676
- Issue date Feb 9, 2021
- Alta Devices, Inc.
- Brendan M. Kayes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for in-situ etch and regrowth in gallium nitride...
- Patent number 10,319,829
- Issue date Jun 11, 2019
- NEXGEN POWER SYSTEMS, INC.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optoelectronic devices including heterojunction and intermediate layer
- Patent number 9,954,131
- Issue date Apr 24, 2018
- Alta Devices, Inc.
- Brendan M. Kayes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-bypass diode function for gallium arsenide photovoltaic devices
- Patent number 9,716,196
- Issue date Jul 25, 2017
- Alta Devices, Inc.
- Hui Nie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Textured metallic back reflector
- Patent number 9,691,921
- Issue date Jun 27, 2017
- Alta Devices, Inc.
- Harry Atwater
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a merged P-N junction and schottky diode with...
- Patent number 9,525,039
- Issue date Dec 20, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a GaN P-i-N diode using implantation
- Patent number 9,484,470
- Issue date Nov 1, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral GaN JFET with vertical drift region
- Patent number 9,472,684
- Issue date Oct 18, 2016
- Avogy, Inc.
- Hui Nie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based Schottky barrier diode with algan surface layer
- Patent number 9,450,112
- Issue date Sep 20, 2016
- Avogy, Inc.
- Richard J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a gallium nitride merged P-I-N schottky (MPS)...
- Patent number 9,397,186
- Issue date Jul 19, 2016
- Avogy, Inc.
- Madhan M. Raj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge termination by ion implantation in gallium nitride
- Patent number 9,330,918
- Issue date May 3, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for a GaN vertical JFET utilizing a regrown channel
- Patent number 9,324,844
- Issue date Apr 26, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for diffusion and implantation in gallium nitride...
- Patent number 9,318,331
- Issue date Apr 19, 2016
- Avogy, Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical gallium nitride JFET with gate and source electrodes on re...
- Patent number 9,318,619
- Issue date Apr 19, 2016
- Avogy, Inc.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for doping control in gallium nitride based devices
- Patent number 9,287,389
- Issue date Mar 15, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for a gallium nitride self-aligned vertical MESFET
- Patent number 9,269,793
- Issue date Feb 23, 2016
- Avogy, Inc.
- Richard J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for floating guard rings in gallium nitride mater...
- Patent number 9,224,828
- Issue date Dec 29, 2015
- Avogy, Inc.
- Andrew Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diode with buried layer in GaN materials
- Patent number 9,196,679
- Issue date Nov 24, 2015
- Avogy, Inc.
- Andrew Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for a GAN vertical JFET utilizing a regrown gate
- Patent number 9,184,305
- Issue date Nov 10, 2015
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming optoelectronic devices including heterojunction
- Patent number 9,178,099
- Issue date Nov 3, 2015
- Alta Devices, Inc.
- Hui Nie
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Monolithically integrated vertical JFET and Schottky diode
- Patent number 9,171,937
- Issue date Oct 27, 2015
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for fabricating floating guard rings in GaN mater...
- Patent number 9,171,751
- Issue date Oct 27, 2015
- Avogy, Inc.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a gallium nitride P-i-N diode using implantation
- Patent number 9,171,900
- Issue date Oct 27, 2015
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a gallium nitride merged P-i-N Schottky (MPS)...
- Patent number 9,171,923
- Issue date Oct 27, 2015
- Avogy, Inc.
- Andrew P. Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum gallium nitride etch stop layer for gallium nitride based...
- Patent number 9,159,784
- Issue date Oct 13, 2015
- Avogy, Inc.
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a merged P-N junction and schottky diode with...
- Patent number 9,159,799
- Issue date Oct 13, 2015
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming optoelectronic devices including heterojunction
- Patent number 9,136,417
- Issue date Sep 15, 2015
- Alta Devices, Inc.
- Hui Nie
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Optoelectronic devices including heterojunction and intermediate layer
- Patent number 9,136,418
- Issue date Sep 15, 2015
- Alta Devices, Inc.
- Hui Nie
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Method and system for formation of P-N junctions in gallium nitride...
- Patent number 9,136,116
- Issue date Sep 15, 2015
- Avogy, Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELF-BYPASS DIODE FUNCTION FOR GALLIUM ARSENIDE PHOTOVOLTAIC DEVICES
- Publication number 20190181281
- Publication date Jun 13, 2019
- Alta Devices, Inc.
- Andrew J. RITENOUR
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
OPTOELECTRONIC DEVICES INCLUDING HETEROJUNCTION AND INTERMEDIATE LAYER
- Publication number 20180240928
- Publication date Aug 23, 2018
- Alta Devices, Inc.
- Brendan M. KAYES
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR IN-SITU ETCH AND REGROWTH IN GALLIUM NITRIDE...
- Publication number 20180190789
- Publication date Jul 5, 2018
- Nexgen Power Systems, Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-BYPASS DIODE FUNCTION FOR GALLIUM ARSENIDE PHOTOVOLTAIC DEVICES
- Publication number 20170323987
- Publication date Nov 9, 2017
- Alta Devices, Inc.
- Hui NIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR IN-SITU ETCH AND REGROWTH IN GALLIUM NITRIDE...
- Publication number 20160190276
- Publication date Jun 30, 2016
- AVOGY, INC.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR GAN VERTICAL JFET UTILIZING A REGROWN GATE
- Publication number 20160190351
- Publication date Jun 30, 2016
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTOR INCLUDING A...
- Publication number 20160190296
- Publication date Jun 30, 2016
- AVOGY, INC.
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR FORMATION OF P-N JUNCTIONS IN GALLIUM NITRIDE...
- Publication number 20160043182
- Publication date Feb 11, 2016
- AVOGY, INC.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS
- Publication number 20160043198
- Publication date Feb 11, 2016
- AVOGY, INC.
- Andrew Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR GALLIUM NITRIDE ELECTRONIC DEVICES USING ENGI...
- Publication number 20160013045
- Publication date Jan 14, 2016
- AVOGY, INC.
- Hui Nie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A MERGED P-N JUNCTION AND SCHOTTKY DIODE WITH...
- Publication number 20160005835
- Publication date Jan 7, 2016
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A GAN P-I-N DIODE USING IMPLANTATION
- Publication number 20150364612
- Publication date Dec 17, 2015
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL JFET WITH SELF-ALI...
- Publication number 20150340514
- Publication date Nov 26, 2015
- AVOGY, INC.
- Don Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR LOCAL CONTROL OF DEFECT DENSITY IN GALLIUM NI...
- Publication number 20150325677
- Publication date Nov 12, 2015
- AVOGY, INC.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL TRANSISTOR
- Publication number 20150243758
- Publication date Aug 27, 2015
- AVOGY, INC.
- Hui Nie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTOELECTRONIC DEVICES INCLUDING HETEROJUNCTION AND INTERMEDIATE LAYER
- Publication number 20150228835
- Publication date Aug 13, 2015
- Brendan M. KAYES
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A GALLIUM NITRIDE MERGED P-I-N SCHOTTKY (MPS)...
- Publication number 20150200268
- Publication date Jul 16, 2015
- AVOGY, INC.
- Madhan M. Raj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EDGE TERMINATION BY ION IMPLANTATION IN GALLIUM NITRIDE
- Publication number 20150200097
- Publication date Jul 16, 2015
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GALLIUM NITRIDE SELF-ALIGNED VERTICAL MESFET
- Publication number 20150179772
- Publication date Jun 25, 2015
- AVOGY, INC.
- Richard J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS
- Publication number 20150179733
- Publication date Jun 25, 2015
- AVOGY, INC.
- Andrew Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR DOPING CONTROL IN GALLIUM NITRIDE BASED DEVICES
- Publication number 20150155372
- Publication date Jun 4, 2015
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL GALLIUM NITRIDE JFET WITH GATE AND SOURCE ELECTRODES ON RE...
- Publication number 20150137140
- Publication date May 21, 2015
- AVOGY, INC.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHICALLY INTEGRATED VERTICAL JFET AND SCHOTTKY DIODE
- Publication number 20150140746
- Publication date May 21, 2015
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GAN VERTICAL JFET UTILIZING A REGROWN CHANNEL
- Publication number 20150132899
- Publication date May 14, 2015
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BONDABLE TOP METAL CONTACTS FOR GALLIUM NITRIDE POWER DEVICES
- Publication number 20150102360
- Publication date Apr 16, 2015
- AVOGY, INC.
- Brian Joel Alvarez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR DIFFUSION AND IMPLANTATION IN GALLIUM NITRIDE...
- Publication number 20150017792
- Publication date Jan 15, 2015
- AVOGY, INC.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN-BASED SCHOTTKY BARRIER DIODE WITH ALGAN SURFACE LAYER
- Publication number 20140374769
- Publication date Dec 25, 2014
- Richard J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL JFET WITH SELF-ALI...
- Publication number 20140370669
- Publication date Dec 18, 2014
- Don Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating a gallium nitride p-i-n diode using implantation
- Publication number 20140346527
- Publication date Nov 27, 2014
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A MERGED P-N JUNCTION AND SCHOTTKY DIODE WITH...
- Publication number 20140312355
- Publication date Oct 23, 2014
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Self-bypass diode function for gallium arsenide photovoltaic devices

Optoelectronic devices including heterojunction and intermediate layer

Method and system for in-situ etch and regrowth in gallium nitride...

Optoelectronic devices including heterojunction and intermediate layer

Self-bypass diode function for gallium arsenide photovoltaic devices

Textured metallic back reflector

Method of fabricating a merged P-N junction and schottky diode with...

Method of fabricating a GaN P-i-N diode using implantation

Lateral GaN JFET with vertical drift region

GaN-based Schottky barrier diode with algan surface layer

Method of fabricating a gallium nitride merged P-I-N schottky (MPS)...

Edge termination by ion implantation in gallium nitride

Method and system for a GaN vertical JFET utilizing a regrown channel

Method and system for diffusion and implantation in gallium nitride...

Vertical gallium nitride JFET with gate and source electrodes on re...

Method and system for doping control in gallium nitride based devices

Method and system for a gallium nitride self-aligned vertical MESFET

Method and system for floating guard rings in gallium nitride mater...

Schottky diode with buried layer in GaN materials

Method and system for a GAN vertical JFET utilizing a regrown gate

Methods for forming optoelectronic devices including heterojunction

Monolithically integrated vertical JFET and Schottky diode

Method and system for fabricating floating guard rings in GaN mater...

Method of fabricating a gallium nitride P-i-N diode using implantation

Method of fabricating a gallium nitride merged P-i-N Schottky (MPS)...

Aluminum gallium nitride etch stop layer for gallium nitride based...

Method of fabricating a merged P-N junction and schottky diode with...

Methods for forming optoelectronic devices including heterojunction

Optoelectronic devices including heterojunction and intermediate layer

Method and system for formation of P-N junctions in gallium nitride...

Patents Applicationslast 30 patents

SELF-BYPASS DIODE FUNCTION FOR GALLIUM ARSENIDE PHOTOVOLTAIC DEVICES

OPTOELECTRONIC DEVICES INCLUDING HETEROJUNCTION AND INTERMEDIATE LAYER

METHOD AND SYSTEM FOR IN-SITU ETCH AND REGROWTH IN GALLIUM NITRIDE...

SELF-BYPASS DIODE FUNCTION FOR GALLIUM ARSENIDE PHOTOVOLTAIC DEVICES

METHOD AND SYSTEM FOR IN-SITU ETCH AND REGROWTH IN GALLIUM NITRIDE...

METHOD AND SYSTEM FOR GAN VERTICAL JFET UTILIZING A REGROWN GATE

GALLIUM NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTOR INCLUDING A...

METHOD AND SYSTEM FOR FORMATION OF P-N JUNCTIONS IN GALLIUM NITRIDE...

SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS

METHOD AND SYSTEM FOR GALLIUM NITRIDE ELECTRONIC DEVICES USING ENGI...

METHOD OF FABRICATING A MERGED P-N JUNCTION AND SCHOTTKY DIODE WITH...

METHOD OF FABRICATING A GAN P-I-N DIODE USING IMPLANTATION

METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL JFET WITH SELF-ALI...

METHOD AND SYSTEM FOR LOCAL CONTROL OF DEFECT DENSITY IN GALLIUM NI...

METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL TRANSISTOR

OPTOELECTRONIC DEVICES INCLUDING HETEROJUNCTION AND INTERMEDIATE LAYER

METHOD OF FABRICATING A GALLIUM NITRIDE MERGED P-I-N SCHOTTKY (MPS)...

EDGE TERMINATION BY ION IMPLANTATION IN GALLIUM NITRIDE

METHOD AND SYSTEM FOR A GALLIUM NITRIDE SELF-ALIGNED VERTICAL MESFET

SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS

METHOD AND SYSTEM FOR DOPING CONTROL IN GALLIUM NITRIDE BASED DEVICES

VERTICAL GALLIUM NITRIDE JFET WITH GATE AND SOURCE ELECTRODES ON RE...

MONOLITHICALLY INTEGRATED VERTICAL JFET AND SCHOTTKY DIODE

METHOD AND SYSTEM FOR A GAN VERTICAL JFET UTILIZING A REGROWN CHANNEL

BONDABLE TOP METAL CONTACTS FOR GALLIUM NITRIDE POWER DEVICES

METHOD AND SYSTEM FOR DIFFUSION AND IMPLANTATION IN GALLIUM NITRIDE...

GAN-BASED SCHOTTKY BARRIER DIODE WITH ALGAN SURFACE LAYER

METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL JFET WITH SELF-ALI...

Method of fabricating a gallium nitride p-i-n diode using implantation

METHOD OF FABRICATING A MERGED P-N JUNCTION AND SCHOTTKY DIODE WITH...