Huiming BU

Person

Millwood, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Stacked nanosheet gate-all-around device structures
- Patent number 12,166,042
- Issue date Dec 10, 2024
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enabling anneal for reliability improvement and multi-Vt with inter...
- Patent number 11,329,136
- Issue date May 10, 2022
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming a sacrificial liner for dual channel devices
- Patent number 11,189,729
- Issue date Nov 30, 2021
- Tessera, Inc.
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interface-less contacts to source/drain regions and gate electrode...
- Patent number 11,139,385
- Issue date Oct 5, 2021
- International Business Machines Corporation
- Junli Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming a sacrificial liner for dual channel devices
- Patent number 11,094,824
- Issue date Aug 17, 2021
- Tessera, Inc.
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Precise junction placement in vertical semiconductor devices using...
- Patent number 11,088,278
- Issue date Aug 10, 2021
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrating a junction field effect transistor into a vertical fiel...
- Patent number 11,011,513
- Issue date May 18, 2021
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conformal doping for punch through stopper in fin field effect tran...
- Patent number 10,937,867
- Issue date Mar 2, 2021
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with mitigated local layout effects
- Patent number 10,892,181
- Issue date Jan 12, 2021
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two step fin etch and reveal for VTFETs and high breakdown LDVTFETs
- Patent number 10,811,528
- Issue date Oct 20, 2020
- International Business Machines Corporation
- Mona Ebrish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge devices and methods of manufacture
- Patent number 10,748,893
- Issue date Aug 18, 2020
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of electrostatic discharge protection into vertical fin...
- Patent number 10,741,544
- Issue date Aug 11, 2020
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conformal doping for punch through stopper in fin field effect tran...
- Patent number 10,741,647
- Issue date Aug 11, 2020
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin isolation to mitigate local layout effects
- Patent number 10,685,866
- Issue date Jun 16, 2020
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fin oxidation by flowable oxide fill and steam anneal to...
- Patent number 10,658,224
- Issue date May 19, 2020
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bottom source/drain silicidation for vertical field-effect transist...
- Patent number 10,629,443
- Issue date Apr 21, 2020
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming a sacrificial liner for dual channel devices
- Patent number 10,593,802
- Issue date Mar 17, 2020
- Tessera, Inc.
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor device
- Patent number 10,573,727
- Issue date Feb 25, 2020
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor for input/output device integrated with...
- Patent number 10,522,636
- Issue date Dec 31, 2019
- International Business Machines Corporation
- Chun Wing Yeung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming a sacrificial liner for dual channel devices
- Patent number 10,510,892
- Issue date Dec 17, 2019
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrating a junction field effect transistor into a vertical fiel...
- Patent number 10,504,889
- Issue date Dec 10, 2019
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conformal doping for punch through stopper in fin field effect tran...
- Patent number 10,453,922
- Issue date Oct 22, 2019
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicidation of bottom source/drain sheet using pinch-off sacrifici...
- Patent number 10,418,462
- Issue date Sep 17, 2019
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical FET structure
- Patent number 10,347,759
- Issue date Jul 9, 2019
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming eDRAM unit cell with VFET and via capacitance
- Patent number 10,319,852
- Issue date Jun 11, 2019
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming a sacrificial liner for dual channel devices
- Patent number 10,312,370
- Issue date Jun 4, 2019
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HDP fill with reduced void formation and spacer damage
- Patent number 10,297,506
- Issue date May 21, 2019
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor for input/output device integrated with...
- Patent number 10,297,667
- Issue date May 21, 2019
- International Business Machines Corporation
- Chun Wing Yeung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge protection using vertical fin CMOS technology
- Patent number 10,276,558
- Issue date Apr 30, 2019
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Precise junction placement in vertical semiconductor devices using...
- Patent number 10,249,754
- Issue date Apr 2, 2019
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELF-ALIGNED BACKSIDE CONTACT WITH INCREASED CONTACT AREA
- Publication number 20230411289
- Publication date Dec 21, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BACKSIDE CONTACT WITH INCREASED CONTACT AREA
- Publication number 20230411466
- Publication date Dec 21, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE POWER RAILS AND POWER DISTRIBUTION NETWORK FOR DENSITY SCA...
- Publication number 20230207553
- Publication date Jun 29, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BURIED POWER RAIL FORMATION FOR SEMICONDUCTOR DEVICES
- Publication number 20230117743
- Publication date Apr 20, 2023
- International Business Machines Corporation
- HUIMEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED NANOSHEET GATE-ALL-AROUND DEVICE STRUCTURES
- Publication number 20230121650
- Publication date Apr 20, 2023
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENABLING ANNEAL FOR RELIABILITY IMPROVEMENT AND MULTI-VT WITH INTER...
- Publication number 20220238682
- Publication date Jul 28, 2022
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING A SACRIFICIAL LINER FOR DUAL CHANNEL DEVICES
- Publication number 20220069118
- Publication date Mar 3, 2022
- Tessera, Inc.
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FIN OXIDATION BY FLOWABLE OXIDE FILL AND STEAM ANNEAL TO...
- Publication number 20200203214
- Publication date Jun 25, 2020
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF ELECTROSTATIC DISCHARGE PROTECTION INTO VERTICAL FIN...
- Publication number 20200152619
- Publication date May 14, 2020
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING A SACRIFICIAL LINER FOR DUAL CHANNEL DEVICES
- Publication number 20200091336
- Publication date Mar 19, 2020
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING A SACRIFICIAL LINER FOR DUAL CHANNEL DEVICES
- Publication number 20200083364
- Publication date Mar 12, 2020
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN ISOLATION TO MITIGATE LOCAL LAYOUT EFFECTS
- Publication number 20200083088
- Publication date Mar 12, 2020
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN OXIDATION BY FLOWABLE OXIDE FILL AND STEAM ANNEAL TO MITIGATE L...
- Publication number 20200083089
- Publication date Mar 12, 2020
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATING A JUNCTION FIELD EFFECT TRANSISTOR INTO A VERTICAL FIEL...
- Publication number 20200066711
- Publication date Feb 27, 2020
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENABLING ANNEAL FOR RELIABILITY IMPROVEMENT AND MULTI-VT WITH INTER...
- Publication number 20190371903
- Publication date Dec 5, 2019
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERFACE-LESS CONTACTS TO SOURCE/DRAIN REGIONS AND GATE ELECTRODE...
- Publication number 20190355829
- Publication date Nov 21, 2019
- International Business Machines Corporation
- Junli Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFORMAL DOPING FOR PUNCH THROUGH STOPPER IN FIN FIELD EFFECT TRAN...
- Publication number 20190341458
- Publication date Nov 7, 2019
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFORMAL DOPING FOR PUNCH THROUGH STOPPER IN FIN FIELD EFFECT TRAN...
- Publication number 20190341457
- Publication date Nov 7, 2019
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Two Step Fin Etch and Reveal for VTFETs and High Breakdown LDVTFETs
- Publication number 20190296142
- Publication date Sep 26, 2019
- International Business Machines Corporation
- Mona Ebrish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR FOR INPUT/OUTPUT DEVICE INTEGRATED WITH...
- Publication number 20190198629
- Publication date Jun 27, 2019
- International Business Machines Corporation
- CHUN WING YEUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE DEVICES AND METHODS OF MANUFACTURE
- Publication number 20190157260
- Publication date May 23, 2019
- International Business Machines Corporation
- Huiming BU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRECISE JUNCTION PLACEMENT IN VERTICAL SEMICONDUCTOR DEVICES USING...
- Publication number 20190148545
- Publication date May 16, 2019
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE PROTECTION USING VERTICAL FIN CMOS TECHNOLOGY
- Publication number 20190131292
- Publication date May 2, 2019
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HDP FILL WITH REDUCED VOID FORMATION AND SPACER DAMAGE
- Publication number 20180323110
- Publication date Nov 8, 2018
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FET STRUCTURE
- Publication number 20180248037
- Publication date Aug 30, 2018
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING eDRAM UNIT CELL WITH VFET AND VIA CAPACITANCE
- Publication number 20180211963
- Publication date Jul 26, 2018
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRECISE JUNCTION PLACEMENT IN VERTICAL SEMICONDUCTOR DEVICES USING...
- Publication number 20180182892
- Publication date Jun 28, 2018
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING A SACRIFICIAL LINER FOR DUAL CHANNEL DEVICES
- Publication number 20180090599
- Publication date Mar 29, 2018
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING A SACRIFICIAL LINER FOR DUAL CHANNEL DEVICES
- Publication number 20180090606
- Publication date Mar 29, 2018
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE DEVICES AND METHODS OF MANUFACTURE
- Publication number 20180090484
- Publication date Mar 29, 2018
- International Business Machines Corporation
- Huiming BU
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Stacked nanosheet gate-all-around device structures

Enabling anneal for reliability improvement and multi-Vt with inter...

Forming a sacrificial liner for dual channel devices

Interface-less contacts to source/drain regions and gate electrode...

Forming a sacrificial liner for dual channel devices

Precise junction placement in vertical semiconductor devices using...

Integrating a junction field effect transistor into a vertical fiel...

Conformal doping for punch through stopper in fin field effect tran...

Semiconductor device with mitigated local layout effects

Two step fin etch and reveal for VTFETs and high breakdown LDVTFETs

Electrostatic discharge devices and methods of manufacture

Integration of electrostatic discharge protection into vertical fin...

Conformal doping for punch through stopper in fin field effect tran...

Fin isolation to mitigate local layout effects

Method of fin oxidation by flowable oxide fill and steam anneal to...

Bottom source/drain silicidation for vertical field-effect transist...

Forming a sacrificial liner for dual channel devices

Vertical transistor device

Fin field-effect transistor for input/output device integrated with...

Forming a sacrificial liner for dual channel devices

Integrating a junction field effect transistor into a vertical fiel...

Conformal doping for punch through stopper in fin field effect tran...

Silicidation of bottom source/drain sheet using pinch-off sacrifici...

Vertical FET structure

Forming eDRAM unit cell with VFET and via capacitance

Forming a sacrificial liner for dual channel devices

HDP fill with reduced void formation and spacer damage

Fin field-effect transistor for input/output device integrated with...

Electrostatic discharge protection using vertical fin CMOS technology

Precise junction placement in vertical semiconductor devices using...

Patents Applicationslast 30 patents

SELF-ALIGNED BACKSIDE CONTACT WITH INCREASED CONTACT AREA

SELF-ALIGNED BACKSIDE CONTACT WITH INCREASED CONTACT AREA

BACKSIDE POWER RAILS AND POWER DISTRIBUTION NETWORK FOR DENSITY SCA...

SELF-ALIGNED BURIED POWER RAIL FORMATION FOR SEMICONDUCTOR DEVICES

STACKED NANOSHEET GATE-ALL-AROUND DEVICE STRUCTURES

ENABLING ANNEAL FOR RELIABILITY IMPROVEMENT AND MULTI-VT WITH INTER...

FORMING A SACRIFICIAL LINER FOR DUAL CHANNEL DEVICES

METHOD OF FIN OXIDATION BY FLOWABLE OXIDE FILL AND STEAM ANNEAL TO...

INTEGRATION OF ELECTROSTATIC DISCHARGE PROTECTION INTO VERTICAL FIN...

FORMING A SACRIFICIAL LINER FOR DUAL CHANNEL DEVICES

FORMING A SACRIFICIAL LINER FOR DUAL CHANNEL DEVICES

FIN ISOLATION TO MITIGATE LOCAL LAYOUT EFFECTS

FIN OXIDATION BY FLOWABLE OXIDE FILL AND STEAM ANNEAL TO MITIGATE L...

INTEGRATING A JUNCTION FIELD EFFECT TRANSISTOR INTO A VERTICAL FIEL...

ENABLING ANNEAL FOR RELIABILITY IMPROVEMENT AND MULTI-VT WITH INTER...

INTERFACE-LESS CONTACTS TO SOURCE/DRAIN REGIONS AND GATE ELECTRODE...

CONFORMAL DOPING FOR PUNCH THROUGH STOPPER IN FIN FIELD EFFECT TRAN...

CONFORMAL DOPING FOR PUNCH THROUGH STOPPER IN FIN FIELD EFFECT TRAN...

Two Step Fin Etch and Reveal for VTFETs and High Breakdown LDVTFETs

FIN FIELD-EFFECT TRANSISTOR FOR INPUT/OUTPUT DEVICE INTEGRATED WITH...

ELECTROSTATIC DISCHARGE DEVICES AND METHODS OF MANUFACTURE

PRECISE JUNCTION PLACEMENT IN VERTICAL SEMICONDUCTOR DEVICES USING...

ELECTROSTATIC DISCHARGE PROTECTION USING VERTICAL FIN CMOS TECHNOLOGY

HDP FILL WITH REDUCED VOID FORMATION AND SPACER DAMAGE

VERTICAL FET STRUCTURE

FORMING eDRAM UNIT CELL WITH VFET AND VIA CAPACITANCE

PRECISE JUNCTION PLACEMENT IN VERTICAL SEMICONDUCTOR DEVICES USING...

FORMING A SACRIFICIAL LINER FOR DUAL CHANNEL DEVICES

FORMING A SACRIFICIAL LINER FOR DUAL CHANNEL DEVICES

ELECTROSTATIC DISCHARGE DEVICES AND METHODS OF MANUFACTURE