Hung-Ta Sung

Person

Hsinchu City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method of converting between non-volatile memory technologies and s...
- Patent number 9,589,095
- Issue date Mar 7, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Cheng Sung
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method of converting between non-volatile memory technologies and s...
- Patent number 9,171,120
- Issue date Oct 27, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Cheng Sung
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method of converting between non-volatile memory technologies and s...
- Patent number 8,930,866
- Issue date Jan 6, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Cheng Sung
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device with self-aligned interconnects
- Patent number 8,906,767
- Issue date Dec 9, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yue-Der Chih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Control device with adjusting pulse width modulation function and t...
- Patent number 8,710,767
- Issue date Apr 29, 2014
- Luxmill Electronic Co., Ltd.
- Che-Sheng Chen
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Semiconductor device with self-aligned interconnects
- Patent number 8,610,220
- Issue date Dec 17, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yue-Der Chih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell having a shared programming gate
- Patent number 8,384,149
- Issue date Feb 26, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih Wei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory cell with split gate structure and method for forming...
- Patent number 7,951,670
- Issue date May 31, 2011
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chen-Ming Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable non-volatile memory (PNVM) device
- Patent number 7,880,217
- Issue date Feb 1, 2011
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hung-Cheng Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split-gate memory cells and fabrication methods thereof
- Patent number 7,667,261
- Issue date Feb 23, 2010
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chang-Jen Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split-gate memory cells and fabrication methods thereof
- Patent number 7,652,318
- Issue date Jan 26, 2010
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chang-Jen Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scalable split-gate flash memory cell with high source-coupling ratio
- Patent number 7,608,884
- Issue date Oct 27, 2009
- Taiwan Semiconductor Manufactruing Co., LTD
- Te-Hsun Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High write and erase efficiency embedded flash cell
- Patent number 7,557,402
- Issue date Jul 7, 2009
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Der-Shin Shyu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to increase coupling ratio of source to floating gate in spl...
- Patent number 7,417,278
- Issue date Aug 26, 2008
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Ta Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniform channel programmable erasable flash EEPROM
- Patent number 7,335,941
- Issue date Feb 26, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Te-Hsun Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Logic compatible non-volatile memory cell
- Patent number 7,326,994
- Issue date Feb 5, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Te-Hsun Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Architecture to monitor isolation integrity between floating gate a...
- Patent number 7,226,828
- Issue date Jun 5, 2007
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chang-Jen Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High write and erase efficiency embedded flash cell
- Patent number 7,176,083
- Issue date Feb 13, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Der-Shin Shyu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and devices for determining writing current for memory cells
- Patent number 7,102,919
- Issue date Sep 5, 2006
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hung-Cheng Sung
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of forming an embedded flash memory device
- Patent number 7,056,791
- Issue date Jun 6, 2006
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Der-Shin Shyu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to increase coupling ratio of source to floating gate in spl...
- Patent number 7,001,809
- Issue date Feb 21, 2006
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Ta Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to make minimal spacing between floating gates in split gate...
- Patent number 6,881,629
- Issue date Apr 19, 2005
- Taiwan Semiconductor Manufacturing Company
- Chia-Ta Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded flash memory cell having improved programming and erasing...
- Patent number 6,878,986
- Issue date Apr 12, 2005
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Der-Shin Shyu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device with separate periphery...
- Patent number 6,872,667
- Issue date Mar 29, 2005
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chang-Jen Shieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for flash memory cell
- Patent number 6,849,499
- Issue date Feb 1, 2005
- Taiwan Semiconductor Manufacturing Company
- Hung-Cheng Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for high voltage oxide and select gate poly for split-gate...
- Patent number 6,828,183
- Issue date Dec 7, 2004
- Taiwan Semiconductor Manufacturing Company
- Hung Cheng Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Architecture to suppress bit-line leakage
- Patent number 6,819,593
- Issue date Nov 16, 2004
- Taiwan Semiconductor Manufacturing Company
- Der-Shin Shyu
- G11 - INFORMATION STORAGE
Information Patent Grant
Method to fabricate a non-smiling effect structure in split-gate fl...
- Patent number 6,753,569
- Issue date Jun 22, 2004
- Taiwan Semiconductor Manufacturing Company
- Yai-Fen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Poly etching solution to improve silicon trench for low STI profile
- Patent number 6,649,489
- Issue date Nov 18, 2003
- Taiwan Semiconductor Manufacturing Company
- Li-Wen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to fabricate poly tip in split gate flash
- Patent number 6,635,922
- Issue date Oct 21, 2003
- Taiwan Semiconductor Manufacturing Company
- Chia-Ta Hsieh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VOLTAGE CALIBRATION CIRCUIT CAPABLE OF UPDATING VOLTAGE TO BE CALIB...
- Publication number 20170115340
- Publication date Apr 27, 2017
- POWERCHIP TECHNOLOGY CORPORATION
- Hung-Ta Sung
- G01 - MEASURING TESTING
Information Patent Application
METHOD OF CONVERTING BETWEEN NON-VOLATILE MEMORY TECHNOLOGIES AND S...
- Publication number 20160034629
- Publication date Feb 4, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Cheng SUNG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD OF CONVERTING BETWEEN NON-VOLATILE MEMORY TECHNOLOGIES AND S...
- Publication number 20150095868
- Publication date Apr 2, 2015
- TAIWA SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Hung-Cheng SUNG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD OF CONVERTING BETWEEN NON-VOLATILE MEMORY TECHNOLOGIES AND S...
- Publication number 20140256099
- Publication date Sep 11, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Cheng SUNG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE WITH SELF-ALIGNED INTERCONNECTS
- Publication number 20140094009
- Publication date Apr 3, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yue-Der Chih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SELF-ALIGNED INTERCONNECTS
- Publication number 20130307080
- Publication date Nov 21, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yue-Der Chih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Control device with adjusting pulse width modulation function and t...
- Publication number 20130049637
- Publication date Feb 28, 2013
- Che-Sheng CHEN
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
Memory cell having a shared programming gate
- Publication number 20080258200
- Publication date Oct 23, 2008
- Shih Wei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Split-gate memory cells and fabrication methods thereof
- Publication number 20080121975
- Publication date May 29, 2008
- Chang-Jen Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Split-gate memory cells and fabrication methods thereof
- Publication number 20080105917
- Publication date May 8, 2008
- Taiwan Semiconductor Manufacturing Co., LTD
- Chang-Jen Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Flash memory cell with split gate structure and method for forming...
- Publication number 20070205436
- Publication date Sep 6, 2007
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chen-Ming Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL ARCHITECTURE TO MONITOR ISOLATION INTEGRITY BETWEEN FLOATING...
- Publication number 20070181936
- Publication date Aug 9, 2007
- Taiwan Semiconductor Manufacturing Co., LTD
- Chang-Jen Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Logic compatible non-volatile memory cell
- Publication number 20070120172
- Publication date May 31, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Te-Hsun Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High write and erase efficiency embedded flash cell
- Publication number 20070063248
- Publication date Mar 22, 2007
- Der-Shin Shyu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Programmable non-volatile memory (PNVM) device
- Publication number 20070023822
- Publication date Feb 1, 2007
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hung-Cheng Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Scalable spilt-gate flash memory cell with high source-coupling ratio
- Publication number 20060214214
- Publication date Sep 28, 2006
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-Hsun Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND DEVICES FOR DETERMINING WRITING CURRENT FOR MEMORY CELLS
- Publication number 20060203537
- Publication date Sep 14, 2006
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hung-Cheng Sung
- G11 - INFORMATION STORAGE
Information Patent Application
Method of forming separated charge-holding regions in a semiconduct...
- Publication number 20060046403
- Publication date Mar 2, 2006
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Ting Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Uniform channel programmable erasable flash EEPROM
- Publication number 20060014345
- Publication date Jan 19, 2006
- Te-Hsun Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High write and erase efficiency embedded flash cell
- Publication number 20050282337
- Publication date Dec 22, 2005
- Der-Shin Shyu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nano-crystal non-volatile memory device employing oxidation inhibit...
- Publication number 20050258467
- Publication date Nov 24, 2005
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Wei Wang
- B82 - NANO-TECHNOLOGY
Information Patent Application
Novel architecture to monitor isolation integrity between floating...
- Publication number 20050239247
- Publication date Oct 27, 2005
- Taiwan Semiconductor Manufacturing Co.
- Chang-Jen Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to increase coupling ratio of source to floating gate in spl...
- Publication number 20050207264
- Publication date Sep 22, 2005
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Chia-Ta Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to make minimal spacing between floating gates in split gate...
- Publication number 20050156224
- Publication date Jul 21, 2005
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Chia-Ta Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO MAKE MINIMAL SPACING BETWEEN FLOATING GATES IN SPLIT GATE...
- Publication number 20050054162
- Publication date Mar 10, 2005
- Taiwan Semiconductor Manufacturing Co.
- Chia-Ta Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming an embedded flash memory device
- Publication number 20040248367
- Publication date Dec 9, 2004
- Der-Shin Shyu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Embedded flash memory cell having improved programming and erasing...
- Publication number 20040188750
- Publication date Sep 30, 2004
- Der-Shin Shyu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to fabricate a square word line poly spacer
- Publication number 20040121545
- Publication date Jun 24, 2004
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Bi-Ling Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel architecture to suppress bit-line leakage
- Publication number 20040114435
- Publication date Jun 17, 2004
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Der-Shin Shyu
- G11 - INFORMATION STORAGE
Information Patent Application
Novel process for flash memory cell
- Publication number 20030134473
- Publication date Jul 17, 2003
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Hung-Cheng Sung
- H01 - BASIC ELECTRIC ELEMENTS

Hung-Ta Sung

Person

Patents Grantslast 30 patents

Method of converting between non-volatile memory technologies and s...

Method of converting between non-volatile memory technologies and s...

Method of converting between non-volatile memory technologies and s...

Semiconductor device with self-aligned interconnects

Control device with adjusting pulse width modulation function and t...

Semiconductor device with self-aligned interconnects

Memory cell having a shared programming gate

Flash memory cell with split gate structure and method for forming...

Programmable non-volatile memory (PNVM) device

Split-gate memory cells and fabrication methods thereof

Split-gate memory cells and fabrication methods thereof

Scalable split-gate flash memory cell with high source-coupling ratio

High write and erase efficiency embedded flash cell

Method to increase coupling ratio of source to floating gate in spl...

Uniform channel programmable erasable flash EEPROM

Logic compatible non-volatile memory cell

Architecture to monitor isolation integrity between floating gate a...

High write and erase efficiency embedded flash cell

Methods and devices for determining writing current for memory cells

Method of forming an embedded flash memory device

Method to increase coupling ratio of source to floating gate in spl...

Method to make minimal spacing between floating gates in split gate...

Embedded flash memory cell having improved programming and erasing...

Method of fabricating semiconductor device with separate periphery...

Process for flash memory cell

Process for high voltage oxide and select gate poly for split-gate...

Architecture to suppress bit-line leakage

Method to fabricate a non-smiling effect structure in split-gate fl...

Poly etching solution to improve silicon trench for low STI profile

Method to fabricate poly tip in split gate flash

Patents Applicationslast 30 patents

VOLTAGE CALIBRATION CIRCUIT CAPABLE OF UPDATING VOLTAGE TO BE CALIB...

METHOD OF CONVERTING BETWEEN NON-VOLATILE MEMORY TECHNOLOGIES AND S...

METHOD OF CONVERTING BETWEEN NON-VOLATILE MEMORY TECHNOLOGIES AND S...

METHOD OF CONVERTING BETWEEN NON-VOLATILE MEMORY TECHNOLOGIES AND S...

SEMICONDUCTOR DEVICE WITH SELF-ALIGNED INTERCONNECTS

SEMICONDUCTOR DEVICE WITH SELF-ALIGNED INTERCONNECTS

Control device with adjusting pulse width modulation function and t...

Memory cell having a shared programming gate

Split-gate memory cells and fabrication methods thereof

Split-gate memory cells and fabrication methods thereof

Flash memory cell with split gate structure and method for forming...

NOVEL ARCHITECTURE TO MONITOR ISOLATION INTEGRITY BETWEEN FLOATING...

Logic compatible non-volatile memory cell

High write and erase efficiency embedded flash cell

Programmable non-volatile memory (PNVM) device

Scalable spilt-gate flash memory cell with high source-coupling ratio

METHODS AND DEVICES FOR DETERMINING WRITING CURRENT FOR MEMORY CELLS

Method of forming separated charge-holding regions in a semiconduct...

Uniform channel programmable erasable flash EEPROM

High write and erase efficiency embedded flash cell

Nano-crystal non-volatile memory device employing oxidation inhibit...

Novel architecture to monitor isolation integrity between floating...

Method to increase coupling ratio of source to floating gate in spl...

Method to make minimal spacing between floating gates in split gate...

METHOD TO MAKE MINIMAL SPACING BETWEEN FLOATING GATES IN SPLIT GATE...

Method of forming an embedded flash memory device

Embedded flash memory cell having improved programming and erasing...

Method to fabricate a square word line poly spacer

Novel architecture to suppress bit-line leakage

Novel process for flash memory cell