Husam N. Alshareef

Person

Murphy, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
System and method for mitigating oxide growth in a gate dielectric
- Patent number 10,068,771
- Issue date Sep 4, 2018
- Texas Instruments Incorporated
- Malcolm J. Bevan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
System and method for mitigating oxide growth in a gate dielectric
- Patent number 9,892,927
- Issue date Feb 13, 2018
- Texas Instruments Incorporated
- Malcolm J. Bevan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
System and method for mitigating oxide growth in a gate dielectric
- Patent number 9,779,946
- Issue date Oct 3, 2017
- Texas Instruments Incorporated
- Malcolm J. Bevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for mitigating oxide growth in a gate dielectric
- Patent number 9,576,804
- Issue date Feb 21, 2017
- Texas Instruments Incorporated
- Malcolm J. Bevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for mitigating oxide growth in a gate dielectric
- Patent number 9,396,951
- Issue date Jul 19, 2016
- Texas Instruments Incorporated
- Malcolm J. Bevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for mitigating oxide growth in a gate dielectric
- Patent number 9,368,355
- Issue date Jun 14, 2016
- Texas Instruments Incorporated
- Malcolm J. Bevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for mitigating oxide growth in a gate dielectric
- Patent number 9,337,046
- Issue date May 10, 2016
- Texas Instruments Incorporated
- Malcolm J. Bevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for mitigating oxide growth in a gate dielectric
- Patent number 9,337,044
- Issue date May 10, 2016
- Texas Instruments Incorporated
- Malcolm J. Bevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for mitigating oxide growth in a gate dielectric
- Patent number 9,177,806
- Issue date Nov 3, 2015
- Texas Instruments Incorporated
- Malcolm J. Bevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Work function adjustment with the implant of lanthanides
- Patent number 8,802,519
- Issue date Aug 12, 2014
- Texas Instruments Incorporated
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Work function adjustment with the implant of lanthanides
- Patent number 8,409,943
- Issue date Apr 2, 2013
- Texas Instruments Incorporated
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a high-k gate dielectric layer
- Patent number 8,304,333
- Issue date Nov 6, 2012
- Texas Instruments Incorporated
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitrogen profile in high-K dielectrics using ultrathin disposable c...
- Patent number 8,008,216
- Issue date Aug 30, 2011
- Texas Instruments Incorporated
- Husam Alshareef
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for mitigating oxide growth in a gate dielectric
- Patent number 7,906,441
- Issue date Mar 15, 2011
- Texas Instruments Incorporated
- Malcolm J. Bevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Work function adjustment with the implant of lanthanides
- Patent number 7,858,459
- Issue date Dec 28, 2010
- Texas Instruments Incorporated
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lanthanide series metal implant to control work function of metal g...
- Patent number 7,807,522
- Issue date Oct 5, 2010
- Texas Instruments Incorporated
- Husam Alshareef
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a high-k gate dielectric layer
- Patent number 7,799,669
- Issue date Sep 21, 2010
- Texas Instruments Incorporated
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermal treatment of nitrided oxide to improve negative bias therma...
- Patent number 7,682,988
- Issue date Mar 23, 2010
- Texas Instruments Incorporated
- Husam N. Alshareef
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal gates for mugfet device
- Patent number 7,582,521
- Issue date Sep 1, 2009
- Texas Instruments Incorporated
- Husam Niman Alshareef
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS device having different amounts of nitrogen in the NMOS gate d...
- Patent number 7,514,308
- Issue date Apr 7, 2009
- Texas Instruments Incorporated
- Ajith Varghese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for stabilizing high pressure oxidation of a semiconductor d...
- Patent number 7,410,911
- Issue date Aug 12, 2008
- Micron Technology, Inc.
- Daniel Gealy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post high voltage gate oxide pattern high-vacuum outgas surface tre...
- Patent number 7,402,524
- Issue date Jul 22, 2008
- Texas Instruments Incorporated
- Brian K. Kirkpatrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate dielectric having a flat nitrogen profile and method of manufa...
- Patent number 7,345,001
- Issue date Mar 18, 2008
- Texas Instruments Incorporated
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-gate integrated circuit semiconductor device
- Patent number 7,339,240
- Issue date Mar 4, 2008
- Texas Instruments Incorporated
- Brian K. Kirkpatrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of modulating the work functions of film layers
- Patent number 7,332,433
- Issue date Feb 19, 2008
- Sematech Inc.
- Kisik Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for stabilizing high pressure oxidation of a semiconducto...
- Patent number 7,282,457
- Issue date Oct 16, 2007
- Micron Technology, Inc.
- Daniel Gealy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for stabilizing high pressure oxidation of a semiconducto...
- Patent number 7,279,435
- Issue date Oct 9, 2007
- Micron Technology, Inc.
- Daniel F Gealy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having multiple work functions and method of m...
- Patent number 7,226,826
- Issue date Jun 5, 2007
- Texas Instruments Incorporated
- Husam N. Alshareef
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS device having different amounts of nitrogen in the NMOS gate d...
- Patent number 7,227,201
- Issue date Jun 5, 2007
- Texas Instruments Incorporated
- Ajith Varghese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Antifuse having tantalum oxynitride film and method for making same
- Patent number 7,206,215
- Issue date Apr 17, 2007
- Micron Technology, Inc.
- Scott Jeffrey DeBoer
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
SYSTEM AND METHOD FOR MITIGATING OXIDE GROWTH IN A GATE DIELECTRIC
- Publication number 20180130662
- Publication date May 10, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Malcolm J. Bevan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SYSTEM AND METHOD FOR MITIGATING OXIDE GROWTH IN A GATE DIELECTRIC
- Publication number 20170170022
- Publication date Jun 15, 2017
- TEXAS INSTRUMENTS INCORPORATED
- Malcolm J. Bevan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SYSTEM AND METHOD FOR MITIGATING OXIDE GROWTH IN A GATE DIELECTRIC
- Publication number 20170133228
- Publication date May 11, 2017
- TEXAS INSTRUMENTS INCORPORATED
- Malcolm J. Bevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM AND METHOD FOR MITIGATING OXIDE GROWTH IN A GATE DIELECTRIC
- Publication number 20160300722
- Publication date Oct 13, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Malcolm J. Bevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System and Method for Mitigating Oxide Growth in a Gate Dielectric
- Publication number 20160155641
- Publication date Jun 2, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Malcolm J. Bevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System and Method for Mitigating Oxide Growth in a Gate Dielectric
- Publication number 20160013061
- Publication date Jan 14, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Malcolm J. Bevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System and Method for Mitigating Oxide Growth in a Gate Dielectric
- Publication number 20160013082
- Publication date Jan 14, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Malcolm J. Bevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System and Method for Mitigating Oxide Growth in a Gate Dielectric
- Publication number 20160013083
- Publication date Jan 14, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Malcolm J. Bevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION ADJUSTMENT WITH THE IMPLANT OF LANTHANIDES
- Publication number 20140315377
- Publication date Oct 23, 2014
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION ADJUSTMENT WITH THE IMPLANT OF LANTHANIDES
- Publication number 20130224940
- Publication date Aug 29, 2013
- TEXAS INSTRUMENTS INCOPORATED
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION ADJUSTMENT WITH THE IMPLANT OF LANTHANIDES
- Publication number 20110223757
- Publication date Sep 15, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System and Method for Mitigating Oxide Growth in a Gate Dielectric
- Publication number 20110120374
- Publication date May 26, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Malcolm J. Bevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A HIGH-K GATE DIELECTRIC LAYER
- Publication number 20110006375
- Publication date Jan 13, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitrogen Profile in High-K Dielectrics Using Ultrathin Disposable C...
- Publication number 20090104743
- Publication date Apr 23, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Husam Alshareef
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET WITH METAL GATE ELECTRODE
- Publication number 20090039441
- Publication date Feb 12, 2009
- Hongfa Luna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL GATES FOR MUGFET DEVICE
- Publication number 20080272433
- Publication date Nov 6, 2008
- Husam Niman Alshareef
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A HIGH-K GATE DIELECTRIC LAYER
- Publication number 20080265336
- Publication date Oct 30, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION ADJUSTMENT WITH THE IMPLANT OF LANTHANIDES
- Publication number 20080261368
- Publication date Oct 23, 2008
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMAL ANNEAL METHOD FOR A HIGH-K DIELECTRIC
- Publication number 20080242114
- Publication date Oct 2, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Manuel Quevedo-Lopez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA NITRIDED GATE OXIDE, HIGH-K METAL GATE BASED CMOS DEVICE
- Publication number 20080237604
- Publication date Oct 2, 2008
- Husam Niman Alshareef
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lanthanide series metal implant to control work function of metal g...
- Publication number 20080160736
- Publication date Jul 3, 2008
- Texas Instruments Inc.
- Husam Alshareef
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Dielectric Having a Flat Nitrogen Profile and Method of Manufa...
- Publication number 20080116542
- Publication date May 22, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System and Method for Mitigating Oxide Growth in a Gate Dielectric
- Publication number 20080050882
- Publication date Feb 28, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Malcolm J. Bevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having Multiple Work Functions and Method of M...
- Publication number 20070284676
- Publication date Dec 13, 2007
- TEXAS INSTRUMENTS INCORPORATED
- Husam N. Alshareef
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS Device Having Different Amounts of Nitrogen in the NMOS Gate D...
- Publication number 20070207572
- Publication date Sep 6, 2007
- TEXAS INSTRUMENTS INCORPORATED
- Ajith Varghese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of modulating the work functions of film layers
- Publication number 20070063296
- Publication date Mar 22, 2007
- SEMATECH, Inc.
- Kisik Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual Metal Gate and Method of Manufacture
- Publication number 20070059874
- Publication date Mar 15, 2007
- SEMATECH, Inc.
- Naim Moumen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for dual metal gate CMOS integration
- Publication number 20070048920
- Publication date Mar 1, 2007
- SEMATECH
- Seung-Chul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Capacitors having a capacitor dielectric layer comprising a metal o...
- Publication number 20070001206
- Publication date Jan 4, 2007
- Vishnu K. Agarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTIFUSE HAVING TANTALUM OXYNITRIDE FILM AND METHOD FOR MAKING SAME
- Publication number 20060199311
- Publication date Sep 7, 2006
- Micron Technology, Inc.
- Scott Jeffrey DeBoer
- G11 - INFORMATION STORAGE

Husam N. Alshareef

Person

Patents Grantslast 30 patents

System and method for mitigating oxide growth in a gate dielectric

System and method for mitigating oxide growth in a gate dielectric

System and method for mitigating oxide growth in a gate dielectric

System and method for mitigating oxide growth in a gate dielectric

System and method for mitigating oxide growth in a gate dielectric

System and method for mitigating oxide growth in a gate dielectric

System and method for mitigating oxide growth in a gate dielectric

System and method for mitigating oxide growth in a gate dielectric

System and method for mitigating oxide growth in a gate dielectric

Work function adjustment with the implant of lanthanides

Work function adjustment with the implant of lanthanides

Method of forming a high-k gate dielectric layer

Nitrogen profile in high-K dielectrics using ultrathin disposable c...

System and method for mitigating oxide growth in a gate dielectric

Work function adjustment with the implant of lanthanides

Lanthanide series metal implant to control work function of metal g...

Method of forming a high-k gate dielectric layer

Thermal treatment of nitrided oxide to improve negative bias therma...

Dual metal gates for mugfet device

CMOS device having different amounts of nitrogen in the NMOS gate d...

Method for stabilizing high pressure oxidation of a semiconductor d...

Post high voltage gate oxide pattern high-vacuum outgas surface tre...

Gate dielectric having a flat nitrogen profile and method of manufa...

Dual-gate integrated circuit semiconductor device

Methods of modulating the work functions of film layers

Apparatus for stabilizing high pressure oxidation of a semiconducto...

Apparatus for stabilizing high pressure oxidation of a semiconducto...

Semiconductor device having multiple work functions and method of m...

CMOS device having different amounts of nitrogen in the NMOS gate d...

Antifuse having tantalum oxynitride film and method for making same

Patents Applicationslast 30 patents

SYSTEM AND METHOD FOR MITIGATING OXIDE GROWTH IN A GATE DIELECTRIC

SYSTEM AND METHOD FOR MITIGATING OXIDE GROWTH IN A GATE DIELECTRIC

SYSTEM AND METHOD FOR MITIGATING OXIDE GROWTH IN A GATE DIELECTRIC

SYSTEM AND METHOD FOR MITIGATING OXIDE GROWTH IN A GATE DIELECTRIC

System and Method for Mitigating Oxide Growth in a Gate Dielectric

System and Method for Mitigating Oxide Growth in a Gate Dielectric

System and Method for Mitigating Oxide Growth in a Gate Dielectric

System and Method for Mitigating Oxide Growth in a Gate Dielectric

WORK FUNCTION ADJUSTMENT WITH THE IMPLANT OF LANTHANIDES

WORK FUNCTION ADJUSTMENT WITH THE IMPLANT OF LANTHANIDES

WORK FUNCTION ADJUSTMENT WITH THE IMPLANT OF LANTHANIDES

System and Method for Mitigating Oxide Growth in a Gate Dielectric

METHOD OF FORMING A HIGH-K GATE DIELECTRIC LAYER

Nitrogen Profile in High-K Dielectrics Using Ultrathin Disposable C...

MOSFET WITH METAL GATE ELECTRODE

DUAL METAL GATES FOR MUGFET DEVICE

METHOD OF FORMING A HIGH-K GATE DIELECTRIC LAYER

WORK FUNCTION ADJUSTMENT WITH THE IMPLANT OF LANTHANIDES

THERMAL ANNEAL METHOD FOR A HIGH-K DIELECTRIC

PLASMA NITRIDED GATE OXIDE, HIGH-K METAL GATE BASED CMOS DEVICE

Lanthanide series metal implant to control work function of metal g...

Gate Dielectric Having a Flat Nitrogen Profile and Method of Manufa...

System and Method for Mitigating Oxide Growth in a Gate Dielectric

Semiconductor Device Having Multiple Work Functions and Method of M...

CMOS Device Having Different Amounts of Nitrogen in the NMOS Gate D...

Methods of modulating the work functions of film layers

Dual Metal Gate and Method of Manufacture

Methods for dual metal gate CMOS integration

Capacitors having a capacitor dielectric layer comprising a metal o...

ANTIFUSE HAVING TANTALUM OXYNITRIDE FILM AND METHOD FOR MAKING SAME