Hyeong-Geun An

Person

Gyeonggi-go, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Multi-level memory device using resistance material
- Patent number 8,644,062
- Issue date Feb 4, 2014
- Samsung Electronics Co., Ltd.
- Ik-Soo Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells including resistance variable material patterns of dif...
- Patent number 8,625,325
- Issue date Jan 7, 2014
- Samsung Electronics Co., Ltd.
- Hyeong-Geun An
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device using variable resistive element
- Patent number 8,502,184
- Issue date Aug 6, 2013
- Samsung Electronics Co., Ltd.
- Hyeong-Geun An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory cells having phase changeable patterns therein f...
- Patent number 8,426,840
- Issue date Apr 23, 2013
- Samsung Electronics Co., Ltd.
- Hyeong-Geun An
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Methods of forming a phase change memory device
- Patent number 8,187,914
- Issue date May 29, 2012
- Samsung Electronics Co., Ltd.
- Jin-Il Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structure, a semiconductor device employing the same, and m...
- Patent number 8,039,829
- Issue date Oct 18, 2011
- Samsung Electronics Co., Ltd.
- Jeong-Hee Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase changeable memory cell array region and method of forming the...
- Patent number 8,039,298
- Issue date Oct 18, 2011
- Samsung Electronics Co., Ltd.
- Hyeong-Geun An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming contact structures and semiconductor devices fab...
- Patent number 8,021,977
- Issue date Sep 20, 2011
- Samsung Electronics Co., Ltd.
- Young-Lim Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming phase change memory devices having bottom electr...
- Patent number 7,824,954
- Issue date Nov 2, 2010
- Samsung Electronics Co., Ltd.
- Hyeong-Geun An
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Phase-change memory device having phase change material pattern sha...
- Patent number 7,800,095
- Issue date Sep 21, 2010
- Samsung Electronics Co., Ltd.
- Hyeong-geun An
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory devices including carbon-containing adhesive pa...
- Patent number 7,777,212
- Issue date Aug 17, 2010
- Samsung Electronics Co., Ltd.
- Hyeong-Geun An
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory device and method of fabricating the same
- Patent number 7,767,568
- Issue date Aug 3, 2010
- Samsung Electronics Co., Ltd.
- Hyeong-Geun An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase changeable memory cell array region and method of forming the...
- Patent number 7,638,787
- Issue date Dec 29, 2009
- Samsung Electronics Co., Ltd.
- Hyeong-Geun An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory device and method of forming the same
- Patent number 7,638,788
- Issue date Dec 29, 2009
- Samsung Electronics Co., Ltd.
- Dong-Ho Ahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase-changeable memory device and method of manufacturing the same
- Patent number 7,563,639
- Issue date Jul 21, 2009
- Samsung Electronics Co., Ltd.
- Hee-Ju Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PRAMS having a plurality of active regions located vertically in se...
- Patent number 7,479,405
- Issue date Jan 20, 2009
- Samsung Electronics Co., Ltd.
- Jae-Hyun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PRAMs having a plurality of active regions located vertically in se...
- Patent number 7,309,885
- Issue date Dec 18, 2007
- Samsung Electronics Co., Ltd.
- Jae-Hyun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric capacitors including a seed conductive film
- Patent number 7,064,365
- Issue date Jun 20, 2006
- Samsung Electronics Co., Ltd.
- Hyeong-Geun An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices having dielectric regions protected with...
- Patent number 7,023,037
- Issue date Apr 4, 2006
- Samsung Electronics Co., Ltd.
- Hag-ju Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory device and method of forming the same
- Patent number 6,815,226
- Issue date Nov 9, 2004
- Samsung Electronics, Co., Ltd.
- Kyu-Mann Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of fabricating a ferroelectric memory device
- Patent number 6,815,227
- Issue date Nov 9, 2004
- Samsung Electronics Co., Ltd.
- Hyeong-Geun An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating integrated circuit devices having dielectric...
- Patent number 6,740,531
- Issue date May 25, 2004
- Samsung Electronics Co., Ltd.
- Hag-ju Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory device and method of fabricating the same
- Patent number 6,717,197
- Issue date Apr 6, 2004
- Samsung Electronics Co., Ltd.
- Hyeong-Geun An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FRAM and method of fabricating the same
- Patent number 6,686,620
- Issue date Feb 3, 2004
- Samsung Electronics Co., Ltd.
- Hyeong-Geun An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory device and method of forming the same
- Patent number 6,664,578
- Issue date Dec 16, 2003
- Samsung Electronics
- Kyu-Mann Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Error correction system for correcting errors generated in digital...
- Patent number 5,450,420
- Issue date Sep 12, 1995
- Samsung Electronics Co., Ltd.
- Hyeong-keon An
- H03 - BASIC ELECTRONIC CIRCUITRY

Patents Applicationslast 30 patents

Information Patent Application
NONVOLATILE MEMORY CELLS HAVING PHASE CHANGEABLE PATTERNS THEREIN F...
- Publication number 20130234100
- Publication date Sep 12, 2013
- Hyeong-Geun An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY DEVICE USING VARIABLE RESISTIVE ELEMENT
- Publication number 20110272663
- Publication date Nov 10, 2011
- SAMSUNG ELECTRONICS CO., LTD.
- Hyeong-Geun An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND METHOD FOR FABRICATING A PHASE-CHANGE MATERIAL LAYER
- Publication number 20110197812
- Publication date Aug 18, 2011
- Dong Hyun IM
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Nonvolatile Memory Cells Having Phase Changeable Patterns Therein f...
- Publication number 20110044098
- Publication date Feb 24, 2011
- Hyeong-Geun An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELLS INCLUDING RESISTANCE VARIABLE MATERIAL PATTERNS OF DIF...
- Publication number 20110032753
- Publication date Feb 10, 2011
- Samsung Electronics Co., Ltd.
- Hyeong-Geun An
- G11 - INFORMATION STORAGE
Information Patent Application
Multi-Level Memory Device Using Resistance Material
- Publication number 20110032752
- Publication date Feb 10, 2011
- Ik-Soo Kim
- G11 - INFORMATION STORAGE
Information Patent Application
Method of forming information storage pattern
- Publication number 20100248460
- Publication date Sep 30, 2010
- Jin-Il Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING A PHASE CHANGE MEMORY DEVICE
- Publication number 20100248442
- Publication date Sep 30, 2010
- Jin-Il Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING CONTACT STRUCTURES AND SEMICONDUCTOR DEVICES FAB...
- Publication number 20100144138
- Publication date Jun 10, 2010
- SAMSUNG ELECTRONICS CO., LTD.
- Young-Lim Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming multi-level cell of semiconductor memory
- Publication number 20100093130
- Publication date Apr 15, 2010
- Samsung Electronics Co., Ltd.
- Gyu-Hwan Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGEABLE MEMORY CELL ARRAY REGION AND METHOD OF FORMING THE...
- Publication number 20100055831
- Publication date Mar 4, 2010
- Samsung Electronics Co., Ltd.
- Hyeong-Geun An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING CHALCOGENIDE FILMS AND METHODS OF MANUFACTURING...
- Publication number 20090263934
- Publication date Oct 22, 2009
- Samsung Electronics Co., Ltd.
- Hyeong-Geun AN
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
CONTACT STRUCTURE, A SEMICONDUCTOR DEVICE EMPLOYING THE SAME, AND M...
- Publication number 20090243117
- Publication date Oct 1, 2009
- Jeong-Hee Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Phase Change Memory Devices Having Bottom Electr...
- Publication number 20090017577
- Publication date Jan 15, 2009
- SAMSUNG ELECTRONICS CO., LTD.
- Hyeong-Geun An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Phase change memory device and method of fabricating the same
- Publication number 20080237566
- Publication date Oct 2, 2008
- SAMSUNG ELECTRONICS CO., LTD.
- Hyeong-Geun AN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY DEVICES INCLUDING CARBON-CONTAINING ADHESIVE PA...
- Publication number 20080173858
- Publication date Jul 24, 2008
- SAMSUNG ELECTRONICS CO., LTD.
- Hyeong-Geun An
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE-CHANGE MEMORY DEVICE HAVING PHASE CHANGE MATERIAL PATTERN SHA...
- Publication number 20080149910
- Publication date Jun 26, 2008
- Samsung Electronics Co., Ltd.
- Hyeong-geun AN
- G11 - INFORMATION STORAGE
Information Patent Application
Phase change memory device and method of forming the same
- Publication number 20080093590
- Publication date Apr 24, 2008
- Samsung Electronics Co., Ltd.
- Dong-Ho Ahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRAMS having a plurality of active regions located vertically in se...
- Publication number 20080070344
- Publication date Mar 20, 2008
- Samsung Electronics Co., Ltd.
- Jae-Hyun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGEABLE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20070243659
- Publication date Oct 18, 2007
- Samsung Electronics Co., Ltd.
- Hee-Ju SHIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Phase changeable memory cell array region and method of forming the...
- Publication number 20070111440
- Publication date May 17, 2007
- Hyeong-Geun An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRAMs having a plurality of active regions located vertically in se...
- Publication number 20060076548
- Publication date Apr 13, 2006
- SAMSUNG ELECTRONICS CO., LTD.
- Jae-Hyun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit devices having dielectric regions protected with...
- Publication number 20040183116
- Publication date Sep 23, 2004
- Hag-ju Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric memory device and method of fabricating the same
- Publication number 20040137648
- Publication date Jul 15, 2004
- Samsung Electronics Co., Ltd.
- Hyeong-Geun An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric capacitors including a seed conductive film and metho...
- Publication number 20040135182
- Publication date Jul 15, 2004
- Hyeong-Geun An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric memory device and method of forming the same
- Publication number 20040005724
- Publication date Jan 8, 2004
- Samsung Electronics
- Kyu-Mann Lee
- G11 - INFORMATION STORAGE
Information Patent Application
Ferroelectric memory device and method of fabricating the same
- Publication number 20030057462
- Publication date Mar 27, 2003
- Samsung Electronics Co., Ltd.
- Hyeong-Geun An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric memory device and method of forming the same
- Publication number 20030035313
- Publication date Feb 20, 2003
- Kyu-Mann Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FRAM and method of fabricating the same
- Publication number 20020153550
- Publication date Oct 24, 2002
- Samsung Electronics Co., Ltd.
- Hyeong-Geun An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit devices having dielectric regions protected with...
- Publication number 20020021544
- Publication date Feb 21, 2002
- Hag-ju Cho
- H01 - BASIC ELECTRIC ELEMENTS

Hyeong-Geun An

Person

Patents Grantslast 30 patents

Multi-level memory device using resistance material

Memory cells including resistance variable material patterns of dif...

Nonvolatile memory device using variable resistive element

Nonvolatile memory cells having phase changeable patterns therein f...

Methods of forming a phase change memory device

Contact structure, a semiconductor device employing the same, and m...

Phase changeable memory cell array region and method of forming the...

Methods of forming contact structures and semiconductor devices fab...

Methods of forming phase change memory devices having bottom electr...

Phase-change memory device having phase change material pattern sha...

Phase change memory devices including carbon-containing adhesive pa...

Phase change memory device and method of fabricating the same

Phase changeable memory cell array region and method of forming the...

Phase change memory device and method of forming the same

Phase-changeable memory device and method of manufacturing the same

PRAMS having a plurality of active regions located vertically in se...

PRAMs having a plurality of active regions located vertically in se...

Ferroelectric capacitors including a seed conductive film

Integrated circuit devices having dielectric regions protected with...

Ferroelectric memory device and method of forming the same

Method of fabricating a ferroelectric memory device

Method of fabricating integrated circuit devices having dielectric...

Ferroelectric memory device and method of fabricating the same

FRAM and method of fabricating the same

Ferroelectric memory device and method of forming the same

Error correction system for correcting errors generated in digital...

Patents Applicationslast 30 patents

NONVOLATILE MEMORY CELLS HAVING PHASE CHANGEABLE PATTERNS THEREIN F...

NONVOLATILE MEMORY DEVICE USING VARIABLE RESISTIVE ELEMENT

APPARATUS AND METHOD FOR FABRICATING A PHASE-CHANGE MATERIAL LAYER

Nonvolatile Memory Cells Having Phase Changeable Patterns Therein f...

MEMORY CELLS INCLUDING RESISTANCE VARIABLE MATERIAL PATTERNS OF DIF...

Multi-Level Memory Device Using Resistance Material

Method of forming information storage pattern

METHODS OF FORMING A PHASE CHANGE MEMORY DEVICE

METHODS OF FORMING CONTACT STRUCTURES AND SEMICONDUCTOR DEVICES FAB...

Methods of forming multi-level cell of semiconductor memory

PHASE CHANGEABLE MEMORY CELL ARRAY REGION AND METHOD OF FORMING THE...

METHODS OF FORMING CHALCOGENIDE FILMS AND METHODS OF MANUFACTURING...

CONTACT STRUCTURE, A SEMICONDUCTOR DEVICE EMPLOYING THE SAME, AND M...

Methods of Forming Phase Change Memory Devices Having Bottom Electr...

Phase change memory device and method of fabricating the same

PHASE CHANGE MEMORY DEVICES INCLUDING CARBON-CONTAINING ADHESIVE PA...

PHASE-CHANGE MEMORY DEVICE HAVING PHASE CHANGE MATERIAL PATTERN SHA...

Phase change memory device and method of forming the same

PRAMS having a plurality of active regions located vertically in se...

PHASE-CHANGEABLE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

Phase changeable memory cell array region and method of forming the...

PRAMs having a plurality of active regions located vertically in se...

Integrated circuit devices having dielectric regions protected with...

Ferroelectric memory device and method of fabricating the same

Ferroelectric capacitors including a seed conductive film and metho...

Ferroelectric memory device and method of forming the same

Ferroelectric memory device and method of fabricating the same

Ferroelectric memory device and method of forming the same

FRAM and method of fabricating the same

Integrated circuit devices having dielectric regions protected with...