HyungMin Lee

Person

Chungcheongnam-do, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Methods for forming single crystal silicon ingots with improved res...
- Patent number 12,024,789
- Issue date Jul 2, 2024
- GlobalWafers Co., Ltd.
- Richard J. Phillips
- C30 - CRYSTAL GROWTH
Information Patent Grant
Resistivity stabilization measurement of fat neck slabs for high re...
- Patent number 11,739,437
- Issue date Aug 29, 2023
- GlobalWafers Co., Ltd.
- Carissima Marie Hudson
- C30 - CRYSTAL GROWTH
Information Patent Grant
High resistivity single crystal silicon ingot and wafer having impr...
- Patent number 11,655,559
- Issue date May 23, 2023
- GlobalWafers Co., Ltd.
- Soubir Basak
- C30 - CRYSTAL GROWTH
Information Patent Grant
High resistivity single crystal silicon ingot and wafer having impr...
- Patent number 11,655,560
- Issue date May 23, 2023
- GlobalWafers Co., Ltd.
- Soubir Basak
- C30 - CRYSTAL GROWTH
Information Patent Grant
High resistivity single crystal silicon ingot and wafer having impr...
- Patent number 11,142,844
- Issue date Oct 12, 2021
- GlobalWafers Co., Ltd.
- Soubir Basak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming single crystal silicon ingots with improved res...
- Patent number 10,920,337
- Issue date Feb 16, 2021
- GlobalWafers Co., Ltd.
- Richard J. Phillips
- C30 - CRYSTAL GROWTH
Information Patent Grant
Sample rod growth and resistivity measurement during single crystal...
- Patent number 10,793,969
- Issue date Oct 6, 2020
- GlobalWafers Co., Ltd.
- Carissima Marie Hudson
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for determining the resistivity of a polycrystalline silico...
- Patent number 10,781,532
- Issue date Sep 22, 2020
- GlobalWafers Co., Ltd.
- Carissima Marie Hudson
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
RESISTIVITY STABILIZATION MEASUREMENT OF FAT NECK SLABS FOR HIGH RE...
- Publication number 20230340690
- Publication date Oct 26, 2023
- GLOBALWAFERS CO., LTD.
- Carissima Marie Hudson
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS FOR PRODUCING A PRODUCT INGOT HAVING LOW OXYGEN CONTENT
- Publication number 20230250550
- Publication date Aug 10, 2023
- GLOBALWAFERS CO., LTD.
- Carissima Marie Hudson
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT AND WAFER HAVING IMPR...
- Publication number 20220056616
- Publication date Feb 24, 2022
- GLOBALWAFERS CO., LTD.
- Soubir Basak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT AND WAFER HAVING IMPR...
- Publication number 20210404088
- Publication date Dec 30, 2021
- GLOBALWAFERS CO., LTD.
- Soubir Basak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING SINGLE CRYSTAL SILICON INGOTS WITH IMPROVED RES...
- Publication number 20210071315
- Publication date Mar 11, 2021
- GLOBALWAFERS CO., LTD.
- Richard J. Phillips
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT AND WAFER HAVING IMPR...
- Publication number 20200216975
- Publication date Jul 9, 2020
- GlobalWafers Co., Ltd
- Soubir Basak
- C30 - CRYSTAL GROWTH
Information Patent Application
RESISTIVITY STABILIZATION MEASUREMENT OF FAT NECK SLABS FOR HIGH RE...
- Publication number 20200208294
- Publication date Jul 2, 2020
- GLOBALWAFERS CO., LTD.
- Carissima Marie Hudson
- C30 - CRYSTAL GROWTH
Information Patent Application
Center Slab Lapping and Resistivity Measurement During Single Cryst...
- Publication number 20200199773
- Publication date Jun 25, 2020
- GLOBALWAFERS CO., LTD.
- HyungMin Lee
- C30 - CRYSTAL GROWTH
Information Patent Application
Sample Rod Center Slab Resistivity Measurement With Four-Point Prob...
- Publication number 20200199774
- Publication date Jun 25, 2020
- GLOBALWAFERS CO., LTD.
- HyungMin Lee
- C30 - CRYSTAL GROWTH
Information Patent Application
Sample Rod Center Slab Resistivity Measurement During Single Crysta...
- Publication number 20200199775
- Publication date Jun 25, 2020
- GLOBALWAFERS CO., LTD.
- HyungMin Lee
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS FOR DETERMINING THE RESISTIVITY OF A POLYCRYSTALLINE SILICO...
- Publication number 20200002835
- Publication date Jan 2, 2020
- Global Wafers Co., Ltd
- Carissima Marie Hudson
- C30 - CRYSTAL GROWTH
Information Patent Application
SAMPLE ROD GROWTH AND RESISTIVITY MEASUREMENT DURING SINGLE CRYSTAL...
- Publication number 20200002836
- Publication date Jan 2, 2020
- Global Wafers Co., Ltd
- Carissima Marie Hudson
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS FOR FORMING SINGLE CRYSTAL SILICON INGOTS WITH IMPROVED RES...
- Publication number 20180179660
- Publication date Jun 28, 2018
- SunEdison Semiconductor Limited (UEN201334164H)
- Richard J. Phillips
- C30 - CRYSTAL GROWTH

HyungMin Lee

Person

Patents Grantslast 30 patents

Methods for forming single crystal silicon ingots with improved res...

Resistivity stabilization measurement of fat neck slabs for high re...

High resistivity single crystal silicon ingot and wafer having impr...

High resistivity single crystal silicon ingot and wafer having impr...

High resistivity single crystal silicon ingot and wafer having impr...

Methods for forming single crystal silicon ingots with improved res...

Sample rod growth and resistivity measurement during single crystal...

Methods for determining the resistivity of a polycrystalline silico...

Patents Applicationslast 30 patents

RESISTIVITY STABILIZATION MEASUREMENT OF FAT NECK SLABS FOR HIGH RE...

METHODS FOR PRODUCING A PRODUCT INGOT HAVING LOW OXYGEN CONTENT

HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT AND WAFER HAVING IMPR...

HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT AND WAFER HAVING IMPR...

METHODS FOR FORMING SINGLE CRYSTAL SILICON INGOTS WITH IMPROVED RES...

HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT AND WAFER HAVING IMPR...

RESISTIVITY STABILIZATION MEASUREMENT OF FAT NECK SLABS FOR HIGH RE...

Center Slab Lapping and Resistivity Measurement During Single Cryst...

Sample Rod Center Slab Resistivity Measurement With Four-Point Prob...

Sample Rod Center Slab Resistivity Measurement During Single Crysta...

METHODS FOR DETERMINING THE RESISTIVITY OF A POLYCRYSTALLINE SILICO...

SAMPLE ROD GROWTH AND RESISTIVITY MEASUREMENT DURING SINGLE CRYSTAL...

METHODS FOR FORMING SINGLE CRYSTAL SILICON INGOTS WITH IMPROVED RES...