I-cheng Tung

Person

Hillsboro, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Crystalline bottom electrode for perovskite capacitors and methods...
- Patent number 12,100,731
- Issue date Sep 24, 2024
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric capacitors and methods of fabrication
- Patent number 12,048,165
- Issue date Jul 23, 2024
- Intel Corporation
- Nazila Haratipour
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells with ferroelectric capacitors separate from transistor...
- Patent number 11,980,037
- Issue date May 7, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistors for ultra-dense logic and memory applications
- Patent number 11,777,029
- Issue date Oct 3, 2023
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer high-k gate dielectric for a high performance logic tran...
- Patent number 11,742,407
- Issue date Aug 29, 2023
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Relaxor ferroelectric capacitors and methods of fabrication
- Patent number 11,316,027
- Issue date Apr 26, 2022
- Intel Corporation
- Sou-Chi Chang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FERROELECTRIC CAPACITORS AND METHODS OF FABRICATION
- Publication number 20240373644
- Publication date Nov 7, 2024
- Intel Corporation
- Nazila Haratipour
- G11 - INFORMATION STORAGE
Information Patent Application
TECHNOLOGIES FOR PEROVSKITE TRANSISTORS
- Publication number 20240113212
- Publication date Apr 4, 2024
- Intel Corporation
- Ian Alexander Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES
- Publication number 20240105810
- Publication date Mar 28, 2024
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES WITH CONTACTS USING NITRIDIZED MOLYBDENUM
- Publication number 20240105508
- Publication date Mar 28, 2024
- Intel Corporation
- Jitendra Kumar Jha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES WITH LOW OPE...
- Publication number 20240097031
- Publication date Mar 21, 2024
- Intel Corporation
- Punyashloka Debashis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-RESISTANCE AND THERMALLY STABLE CONTACTS WITH PHOSPHIDE OR ARSE...
- Publication number 20240006506
- Publication date Jan 4, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-RESISTANCE AND THERMALLY STABLE CONTACTS WITH BORIDE, INDIUM, O...
- Publication number 20240006533
- Publication date Jan 4, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPPING SOURCE AND DRAIN REGIONS OF TRANSISTORS TO PREVENT DIFFUSIO...
- Publication number 20240006488
- Publication date Jan 4, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE AND DRAIN REFRACTORY METAL CAP
- Publication number 20240006494
- Publication date Jan 4, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL INSULATOR METAL (MIM) CAPACITOR ARCHITECTURES
- Publication number 20230411443
- Publication date Dec 21, 2023
- Intel Corporation
- Kaan OGUZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL INSULATOR METAL (MIM) CAPACITOR ARCHITECTURES
- Publication number 20230411278
- Publication date Dec 21, 2023
- Intel Corporation
- Chia-Ching LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR DEVICES WITH STRONTIUM TITANATE INSULATOR LAYERS
- Publication number 20230253444
- Publication date Aug 10, 2023
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE OR DRAIN METALLIZATION PRIOR TO CONTACT FORMATION IN STACKED...
- Publication number 20230197777
- Publication date Jun 22, 2023
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES WITH TRENCH CONTACT LAYERS FOR...
- Publication number 20230197804
- Publication date Jun 22, 2023
- Nazila HARATIPOUR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTOR STRUCTURES WITH DIVERSE GATE MATERIALS
- Publication number 20230197728
- Publication date Jun 22, 2023
- Intel Corporation
- Nicole K. Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR WITH AN ELECTRICALLY CONDUCTIVE LAYER COUPLED WITH A META...
- Publication number 20230098594
- Publication date Mar 30, 2023
- Intel Corporation
- Chia-Ching LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYER CAPACITOR WITH EDGE INSULATOR
- Publication number 20230102177
- Publication date Mar 30, 2023
- Intel Corporation
- Chia-Ching LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K OR FERROELECTRIC GATE OXIDE WITH ZERO-SIO2 IL PROCESS FOR TR...
- Publication number 20230100952
- Publication date Mar 30, 2023
- Intel Corporation
- I-Cheng TUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE GROWTH OF HIGH-K OXIDE ON CHANNEL OF GATE-ALL-AROUND TRAN...
- Publication number 20230100505
- Publication date Mar 30, 2023
- Intel Corporation
- Ashish Verma PENUMATCHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR WITH DUAL DIELECTRIC LAYERS
- Publication number 20230087624
- Publication date Mar 23, 2023
- Intel Corporation
- Kaan OGUZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL INSULATOR METAL (MIM) CAPACITOR OR BACKEND TRANSISTOR HAVING...
- Publication number 20220199756
- Publication date Jun 23, 2022
- Intel Corporation
- I-Cheng TUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL INSULATOR METAL (MIM) CAPACITOR WITH PEROVSKITE DIELECTRIC
- Publication number 20220199519
- Publication date Jun 23, 2022
- Intel Corporation
- Chia-Ching LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON ELECTRODES FOR FERROELECTRIC CAPACITORS
- Publication number 20220199758
- Publication date Jun 23, 2022
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RIBBON OR WIRE TRANSISTOR STACK WITH SELECTIVE DIPOLE THRESHOLD VOL...
- Publication number 20220199620
- Publication date Jun 23, 2022
- Intel Corporation
- Nicole Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITORS WITH BUILT-IN ELECTRIC FIELDS
- Publication number 20220181433
- Publication date Jun 9, 2022
- Intel Corporation
- Sou-Chi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW LEAKAGE THIN FILM CAPACITORS USING TITANIUM OXIDE DIELECTRIC WI...
- Publication number 20220102483
- Publication date Mar 31, 2022
- Intel Corporation
- Thomas Sounart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE AND REDUCED REACTIVITY APPROACHES FOR FABRICATING CO...
- Publication number 20220102522
- Publication date Mar 31, 2022
- Intel Corporation
- Gilbert DEWEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL CONTACT PROCESS WITH STACKED METAL LAYERS
- Publication number 20220102510
- Publication date Mar 31, 2022
- Intel Corporation
- Kevin COOK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC CAPACITORS AND METHODS OF FABRICATION
- Publication number 20210408018
- Publication date Dec 30, 2021
- Intel Corporation
- Nazila Haratipour
- G11 - INFORMATION STORAGE
Information Patent Application
CRYSTALLINE BOTTOM ELECTRODE FOR PEROVSKITE CAPACITORS AND METHODS...
- Publication number 20210408224
- Publication date Dec 30, 2021
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS

I-cheng Tung

Person

Patents Grantslast 30 patents

Crystalline bottom electrode for perovskite capacitors and methods...

Ferroelectric capacitors and methods of fabrication

Memory cells with ferroelectric capacitors separate from transistor...

Vertical transistors for ultra-dense logic and memory applications

Multilayer high-k gate dielectric for a high performance logic tran...

Relaxor ferroelectric capacitors and methods of fabrication

Patents Applicationslast 30 patents

FERROELECTRIC CAPACITORS AND METHODS OF FABRICATION

TECHNOLOGIES FOR PEROVSKITE TRANSISTORS

VERTICAL FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES

INTEGRATED CIRCUIT DEVICES WITH CONTACTS USING NITRIDIZED MOLYBDENUM

FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES WITH LOW OPE...

LOW-RESISTANCE AND THERMALLY STABLE CONTACTS WITH PHOSPHIDE OR ARSE...

LOW-RESISTANCE AND THERMALLY STABLE CONTACTS WITH BORIDE, INDIUM, O...

CAPPING SOURCE AND DRAIN REGIONS OF TRANSISTORS TO PREVENT DIFFUSIO...

SOURCE AND DRAIN REFRACTORY METAL CAP

METAL INSULATOR METAL (MIM) CAPACITOR ARCHITECTURES

METAL INSULATOR METAL (MIM) CAPACITOR ARCHITECTURES

CAPACITOR DEVICES WITH STRONTIUM TITANATE INSULATOR LAYERS

SOURCE OR DRAIN METALLIZATION PRIOR TO CONTACT FORMATION IN STACKED...

CONTACT OVER ACTIVE GATE STRUCTURES WITH TRENCH CONTACT LAYERS FOR...

STACKED TRANSISTOR STRUCTURES WITH DIVERSE GATE MATERIALS

CAPACITOR WITH AN ELECTRICALLY CONDUCTIVE LAYER COUPLED WITH A META...

MULTILAYER CAPACITOR WITH EDGE INSULATOR

HIGH-K OR FERROELECTRIC GATE OXIDE WITH ZERO-SIO2 IL PROCESS FOR TR...

SELECTIVE GROWTH OF HIGH-K OXIDE ON CHANNEL OF GATE-ALL-AROUND TRAN...

CAPACITOR WITH DUAL DIELECTRIC LAYERS

METAL INSULATOR METAL (MIM) CAPACITOR OR BACKEND TRANSISTOR HAVING...

METAL INSULATOR METAL (MIM) CAPACITOR WITH PEROVSKITE DIELECTRIC

CARBON ELECTRODES FOR FERROELECTRIC CAPACITORS

RIBBON OR WIRE TRANSISTOR STACK WITH SELECTIVE DIPOLE THRESHOLD VOL...

CAPACITORS WITH BUILT-IN ELECTRIC FIELDS

LOW LEAKAGE THIN FILM CAPACITORS USING TITANIUM OXIDE DIELECTRIC WI...

LOW RESISTANCE AND REDUCED REACTIVITY APPROACHES FOR FABRICATING CO...

DUAL CONTACT PROCESS WITH STACKED METAL LAYERS

FERROELECTRIC CAPACITORS AND METHODS OF FABRICATION

CRYSTALLINE BOTTOM ELECTRODE FOR PEROVSKITE CAPACITORS AND METHODS...