Ian F. Deviny

Person

Lincoln, GB

People

Patents Grantslast 30 patents

Information Patent Grant
SIC MOSFET structures with asymmetric trench oxide
- Patent number 12,317,561
- Issue date May 27, 2025
- DYNEX SEMICONDUCTOR LIMITED
- Luther-King Ekonde Ngwendson
Information Patent Grant
Reverse conducting IGBT with controlled anode injection
- Patent number 12,166,111
- Issue date Dec 10, 2024
- DYNEX SEMICONDUCTOR LIMITED
- Luther-King Ekonde Ngwendson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,569,371
- Issue date Jan 31, 2023
- Dynex Semiconductor Limited
- Ian Deviny
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with a temperature sensor
- Patent number 11,508,723
- Issue date Nov 22, 2022
- DYNEX SEMICONDUCTOR LIMITED
- Chunlin Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a LOCOS trench
- Patent number 11,239,351
- Issue date Feb 1, 2022
- DYNEX SEMICONDUCTOR LIMITED
- Luther-King Ngwendson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnecting layer on a semiconductor substrate
- Patent number 5,136,355
- Issue date Aug 4, 1992
- Marconi Electronic Devices Limited
- John A. Kerr
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
IGBT DEVICE
- Publication number 20240222480
- Publication date Jul 4, 2024
- DYNEX SEMICONDUCTOR LIMITED
- Luther-King Ngwendson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING ASYMMETRIC THICKNESS OXIDE TRENCHES
- Publication number 20220320310
- Publication date Oct 6, 2022
- Dynex Semiconductor Limited
- Luther-King Ekonde NGWENDSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC MOSFET STRUCTURES WITH ASYMMETRIC TRENCH OXIDE
- Publication number 20220320295
- Publication date Oct 6, 2022
- Dynex Semiconductor Limited
- Luther-King Ekonde NGWENDSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REVERSE CONDUCTING IGBT WITH CONTROLLED ANODE INJECTION
- Publication number 20220320323
- Publication date Oct 6, 2022
- Dynex Semiconductor Limited
- Luther-King Ekonde NGWENDSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT WITH A VARIATION OF TRENCH OXIDE THICKNESS REGIONS
- Publication number 20220320322
- Publication date Oct 6, 2022
- Dynex Semiconductor Limited
- Luther-King Ekonde NGWENDSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A POWER SEMICONDUCTOR DEVICE WITH A TEMPERATURE SENSOR
- Publication number 20210257355
- Publication date Aug 19, 2021
- Dynex Semiconductor Limited
- Chunlin ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A SEMICONDUCTOR DEVICE
- Publication number 20200127128
- Publication date Apr 23, 2020
- Dynex Semiconductor Limited
- Ian DEVINY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A SEMICONDUCTOR DEVICE WITH A LOCOS TRENCH
- Publication number 20200091328
- Publication date Mar 19, 2020
- Dynex Semiconductor Limited
- Luther-King NGWENDSON
- H01 - BASIC ELECTRIC ELEMENTS

Ian F. Deviny

Person

Patents Grantslast 30 patents

SIC MOSFET structures with asymmetric trench oxide

Reverse conducting IGBT with controlled anode injection

Semiconductor device

Power semiconductor device with a temperature sensor

Semiconductor device with a LOCOS trench

Interconnecting layer on a semiconductor substrate

Patents Applicationslast 30 patents

IGBT DEVICE

METHOD OF FORMING ASYMMETRIC THICKNESS OXIDE TRENCHES

SIC MOSFET STRUCTURES WITH ASYMMETRIC TRENCH OXIDE

REVERSE CONDUCTING IGBT WITH CONTROLLED ANODE INJECTION

IGBT WITH A VARIATION OF TRENCH OXIDE THICKNESS REGIONS

A POWER SEMICONDUCTOR DEVICE WITH A TEMPERATURE SENSOR

A SEMICONDUCTOR DEVICE

A SEMICONDUCTOR DEVICE WITH A LOCOS TRENCH