Igor J. Malik

Person

Palo Alto, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Non-contact etch annealing of strained layers
- Patent number 8,187,377
- Issue date May 29, 2012
- Silicon Genesis Corporation
- Igor J. Malik
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and structure for fabricating bonded substrate structures us...
- Patent number 7,598,153
- Issue date Oct 6, 2009
- Silicon Genesis Corporation
- Francois J. Henley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for fabricating strained layers for the manufactu...
- Patent number 7,595,499
- Issue date Sep 29, 2009
- Silicon Genesis Corporation
- Francois J. Henley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for lattice space engineering
- Patent number 7,390,724
- Issue date Jun 24, 2008
- Silicon Genesis Corporation
- Francois J. Henley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System for forming a strained layer of semiconductor material
- Patent number 7,391,047
- Issue date Jun 24, 2008
- Silicon Genesis Corporation
- Francois J. Henley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface finishing of SOI substrates using an EPI process
- Patent number 7,253,081
- Issue date Aug 7, 2007
- Silicon Genesis Corporation
- Sien G. Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-contact etch annealing of strained layers
- Patent number 7,147,709
- Issue date Dec 12, 2006
- Silicon Genesis Corporation
- Philip Ong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for fabricating strained layers for the manufactu...
- Patent number 7,094,666
- Issue date Aug 22, 2006
- Silicon Genesis Corporation
- Francois J. Henley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Treatment method of film quality for the manufacture of substrates
- Patent number 6,969,668
- Issue date Nov 29, 2005
- Silicon Genesis Corporation
- Sien G. Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Smoothing method for cleaved films made using a release layer
- Patent number 6,881,644
- Issue date Apr 19, 2005
- Silicon Genesis Corporation
- Igor J. Malik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Smoothing method for cleaved films made using thermal treatment
- Patent number 6,455,399
- Issue date Sep 24, 2002
- Silicon Genesis Corporation
- Igor J. Malik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for generating a plurality of donor wafers and ha...
- Patent number 6,448,152
- Issue date Sep 10, 2002
- Silicon Genesis Corporation
- Francois J. Henley
- G05 - CONTROLLING REGULATING
Information Patent Grant
Smoothing method for cleaved films made using a release layer
- Patent number 6,391,219
- Issue date May 21, 2002
- Silicon Genesis Corporation
- Sien G. Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface finishing of SOI substrates using an EPI process
- Patent number 6,287,941
- Issue date Sep 11, 2001
- Silicon Genesis Corporation
- Sien G. Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to remove metals in a scrubber
- Patent number 6,274,059
- Issue date Aug 14, 2001
- Lam Research Corporation
- Wilbur C. Krusell
- B08 - CLEANING
Information Patent Grant
Wafer edge engineering method and device
- Patent number 6,265,328
- Issue date Jul 24, 2001
- Silicon Genesis Corporation
- Francois J. Henley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for surface treatment of substrates
- Patent number 6,221,774
- Issue date Apr 24, 2001
- Silicon Genesis Corporation
- Igor J. Malik
- B24 - GRINDING POLISHING
Information Patent Grant
Smoothing method for cleaved films made using thermal treatment
- Patent number 6,204,151
- Issue date Mar 20, 2001
- Silicon Genesis Corporation
- Igor J. Malik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Treatment method of cleaved film for the manufacture of substrates
- Patent number 6,171,965
- Issue date Jan 9, 2001
- Silicon Genesis Corporation
- Sien G. Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Control of SiO.sub.2 etch rate using dilute chemical etchants in th...
- Patent number 5,919,311
- Issue date Jul 6, 1999
- MEMC Electronic Materials, Inc.
- Larry Wayne Shive
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Structure and method for electrical interconnects for solar systems
- Publication number 20100282292
- Publication date Nov 11, 2010
- Igor Jan Malik
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Method and system for fabricating strained layers for the manufactu...
- Publication number 20080141510
- Publication date Jun 19, 2008
- Silicon Genesis Corporation
- Francois J. Henley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Surface finishing of SOI substrates using an EPI process
- Publication number 20070259526
- Publication date Nov 8, 2007
- Silicon Genesis Corporation
- Sien G. Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and structure for fabricating bonded substrate structures us...
- Publication number 20070232022
- Publication date Oct 4, 2007
- Silicon Genesis Corporation
- Francois J. Henley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-contact etch annealing of strained layers
- Publication number 20070051299
- Publication date Mar 8, 2007
- Silicon Genesis Corporation
- Philip Ong
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and system for fabricating strained layers for the manufactu...
- Publication number 20060160329
- Publication date Jul 20, 2006
- Silicon Genesis Corporation
- Francois J. Henley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and system for fabricating strained layers for the manufactu...
- Publication number 20060024917
- Publication date Feb 2, 2006
- Silicon Genesis Corporation
- Francois J. Henley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for smoothing a film of material using a ring structure
- Publication number 20050247668
- Publication date Nov 10, 2005
- Silicon Genesis Corporation
- Igor J. Malik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and system for lattice space engineering
- Publication number 20050233545
- Publication date Oct 20, 2005
- Silicon Genesis Corporation
- Francois J. Henley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-contact etch annealing of strained layers
- Publication number 20040067644
- Publication date Apr 8, 2004
- Igor J. Malik
- C30 - CRYSTAL GROWTH
Information Patent Application
Smoothing method for cleaved films made using a release layer
- Publication number 20030008477
- Publication date Jan 9, 2003
- Silicon Genesis Corporation
- Sien G. Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Computer memory product for substrate surface treatment applications
- Publication number 20020173872
- Publication date Nov 21, 2002
- SILICON GENESIS
- Igor J. Malik
- B24 - GRINDING POLISHING
Information Patent Application
Surface finishing of SOI substrates using an EPI process
- Publication number 20020022344
- Publication date Feb 21, 2002
- Sien G. Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Smoothing method for cleaved films made using thermal treatment
- Publication number 20010016402
- Publication date Aug 23, 2001
- Igor J. Malik
- H01 - BASIC ELECTRIC ELEMENTS

Igor J. Malik

Person

Patents Grantslast 30 patents

Non-contact etch annealing of strained layers

Method and structure for fabricating bonded substrate structures us...

Method and system for fabricating strained layers for the manufactu...

Method and system for lattice space engineering

System for forming a strained layer of semiconductor material

Surface finishing of SOI substrates using an EPI process

Non-contact etch annealing of strained layers

Method and system for fabricating strained layers for the manufactu...

Treatment method of film quality for the manufacture of substrates

Smoothing method for cleaved films made using a release layer

Smoothing method for cleaved films made using thermal treatment

Method and system for generating a plurality of donor wafers and ha...

Smoothing method for cleaved films made using a release layer

Surface finishing of SOI substrates using an EPI process

Method to remove metals in a scrubber

Wafer edge engineering method and device

Method for surface treatment of substrates

Smoothing method for cleaved films made using thermal treatment

Treatment method of cleaved film for the manufacture of substrates

Control of SiO.sub.2 etch rate using dilute chemical etchants in th...

Patents Applicationslast 30 patents

Structure and method for electrical interconnects for solar systems

Method and system for fabricating strained layers for the manufactu...

Surface finishing of SOI substrates using an EPI process

Method and structure for fabricating bonded substrate structures us...

Non-contact etch annealing of strained layers

Method and system for fabricating strained layers for the manufactu...

Method and system for fabricating strained layers for the manufactu...

Method for smoothing a film of material using a ring structure

Method and system for lattice space engineering

Non-contact etch annealing of strained layers

Smoothing method for cleaved films made using a release layer

Computer memory product for substrate surface treatment applications

Surface finishing of SOI substrates using an EPI process

Smoothing method for cleaved films made using thermal treatment