Igor V. Peidous

Person

Singapore, SG

People

Patents Grantslast 30 patents

Information Patent Grant
Dislocation free local oxidation of silicon with suppression of nar...
- Patent number 6,380,610
- Issue date Apr 30, 2002
- Chartered Semiconductor Manufacturing Ltd.
- Igor V. Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and mask structure for self-aligning ion implanting to form...
- Patent number 6,271,575
- Issue date Aug 7, 2001
- Chartered Semiconductor Manufacturing Ltd.
- Igor V. Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LOCOS mask for suppression of narrow space field oxide thinning and...
- Patent number 6,249,035
- Issue date Jun 19, 2001
- Chartered Semiconductor Manufacturing Ltd.
- Igor V. Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of filling shallow trenches
- Patent number 6,180,490
- Issue date Jan 30, 2001
- Chartered Semiconductor Manufacturing Ltd.
- Vladislav Vassiliev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Locos mask for suppression of narrow space field oxide thinning and...
- Patent number 6,071,793
- Issue date Jun 6, 2000
- Chartered Semiconductor Manufacturing Ltd.
- Igor V. Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sub-quarter-micron MOSFET and method of its manufacturing
- Patent number 6,049,107
- Issue date Apr 11, 2000
- Chartered Semiconductor Manufacturing Ltd.
- Igor V. Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form shallow trench isolation structures with improved is...
- Patent number 6,027,982
- Issue date Feb 22, 2000
- Chartered Semiconductor Manufacturing Ltd.
- Igor V. Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and mask structure for self-aligning ion implanting to form...
- Patent number 6,027,963
- Issue date Feb 22, 2000
- Chartered Semiconductor Manufacturing Ltd.
- Igor V. Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and mask structure for self-aligning ion implanting to form...
- Patent number 6,022,768
- Issue date Feb 8, 2000
- Chartered Semiconductor Manufacturing Ltd.
- Igor V. Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and mask structure for self-aligning ion implanting to form...
- Patent number 6,001,700
- Issue date Dec 14, 1999
- Chartered Semiconductor Manufacturing Ltd.
- Igor V. Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation of MOSFETS with reduced corner parasitic c...
- Patent number 5,989,978
- Issue date Nov 23, 1999
- Chartered Semiconductor Manufacturing, Ltd.
- Igor V. Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making sub-quarter-micron MOSFET
- Patent number 5,937,297
- Issue date Aug 10, 1999
- Chartered Semiconductor Manufacturing, Ltd.
- Igor V. Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of shallow trench isolation
- Patent number 5,930,646
- Issue date Jul 27, 1999
- Chartered Semiconductor Manufacturing, Ltd.
- Henry Gerung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dislocation free local oxidation of silicon with suppression of nar...
- Patent number 5,894,059
- Issue date Apr 13, 1999
- Chartered Semiconductor Manufacturing Company Ltd.
- Igor V. Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and mask structure for self-aligning ion implanting to form...
- Patent number 5,849,613
- Issue date Dec 15, 1998
- Chartered Semiconductor Manufacturing Ltd.
- Igor V. Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Locos with bird's beak suppression by a nitrogen implantation
- Patent number 5,789,305
- Issue date Aug 4, 1998
- Chartered Semiconductor Manufacturing Ltd.
- Igor V. Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Narrow deep trench isolation process with trench filling by oxidation
- Patent number 5,721,174
- Issue date Feb 24, 1998
- Chartered Semiconductor Manufacturing Pte Ltd
- Igor V. Peidous
- H01 - BASIC ELECTRIC ELEMENTS

Igor V. Peidous

Person

Patents Grantslast 30 patents

Dislocation free local oxidation of silicon with suppression of nar...

Method and mask structure for self-aligning ion implanting to form...

LOCOS mask for suppression of narrow space field oxide thinning and...

Method of filling shallow trenches

Locos mask for suppression of narrow space field oxide thinning and...

Sub-quarter-micron MOSFET and method of its manufacturing

Method to form shallow trench isolation structures with improved is...

Method and mask structure for self-aligning ion implanting to form...

Method and mask structure for self-aligning ion implanting to form...

Method and mask structure for self-aligning ion implanting to form...

Shallow trench isolation of MOSFETS with reduced corner parasitic c...

Method for making sub-quarter-micron MOSFET

Method of shallow trench isolation

Dislocation free local oxidation of silicon with suppression of nar...

Method and mask structure for self-aligning ion implanting to form...

Locos with bird's beak suppression by a nitrogen implantation

Narrow deep trench isolation process with trench filling by oxidation