Indira P. Seshadri

Person

Troy, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Source/drain contact positioning under power rail
- Patent number 12,107,132
- Issue date Oct 1, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bottom source/drain etch with fin-cut-last-VTFET
- Patent number 12,021,135
- Issue date Jun 25, 2024
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor with crosslink fin arrangement
- Patent number 12,002,856
- Issue date Jun 4, 2024
- International Business Machines Corporation
- Indira Seshadri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal cut patterning and etching to minimize interlayer dielectric...
- Patent number 11,990,342
- Issue date May 21, 2024
- International Business Machines Corporation
- Kisup Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transport field-effect transistor with gate patterning
- Patent number 11,916,143
- Issue date Feb 27, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical FET with contact to gate above active fin
- Patent number 11,855,191
- Issue date Dec 26, 2023
- International Business Machines Corporation
- Brent Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor boundary protection using reversible crosslinking reflow
- Patent number 11,810,828
- Issue date Nov 7, 2023
- International Business Machines Corporation
- Jing Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Staggered stacked vertical crystalline semiconducting channels
- Patent number 11,756,961
- Issue date Sep 12, 2023
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming crossbar and non-crossbar transistors on the same substrate
- Patent number 11,742,426
- Issue date Aug 29, 2023
- International Business Machines Corporation
- Indira Seshadri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid diffusion break with EUV gate patterning
- Patent number 11,710,768
- Issue date Jul 25, 2023
- International Business Machines Corporation
- Eric Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bottom source/drain etch with fin-cut-last-VTFET
- Patent number 11,695,059
- Issue date Jul 4, 2023
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sacrificial fin for contact self-alignment
- Patent number 11,646,358
- Issue date May 9, 2023
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor with crosslink fin arrangement
- Patent number 11,621,326
- Issue date Apr 4, 2023
- International Business Machines Corporation
- Indira Seshadri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure with N/P boundary buffer
- Patent number 11,569,132
- Issue date Jan 31, 2023
- International Business Machines Corporation
- Romain Lallement
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface treatment of titanium containing hardmasks
- Patent number 11,556,057
- Issue date Jan 17, 2023
- International Business Machines Corporation
- Ekmini A. De Silva
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Enabling residue free gap fill between nanosheets
- Patent number 11,515,431
- Issue date Nov 29, 2022
- International Business Machines Corporation
- Indira Seshadri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Patterning material film stack with hard mask layer configured to s...
- Patent number 11,500,293
- Issue date Nov 15, 2022
- International Business Machines Corporation
- Ekmini Anuja De Silva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sacrificial fin for contact self-alignment
- Patent number 11,316,029
- Issue date Apr 26, 2022
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Additive core subtractive liner for metal cut etch processes
- Patent number 11,276,767
- Issue date Mar 15, 2022
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Staggered stacked vertical crystalline semiconducting channels
- Patent number 11,251,182
- Issue date Feb 15, 2022
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bottom source/drain etch with fin-cut-last-VTFET
- Patent number 11,245,027
- Issue date Feb 8, 2022
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-priming resist for generic inorganic hardmasks
- Patent number 11,226,561
- Issue date Jan 18, 2022
- International Business Machines Corporation
- Chi-Chun Liu
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Additive core subtractive liner for metal cut etch processes
- Patent number 11,152,489
- Issue date Oct 19, 2021
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal cut patterning and etching to minimize interlayer dielectric...
- Patent number 11,133,189
- Issue date Sep 28, 2021
- International Business Machines Corporation
- Kisup Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable hardmask for overlayer metrology contrast
- Patent number 11,121,024
- Issue date Sep 14, 2021
- International Business Machines Corporation
- Ekmini A. De Silva
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Vertically stacked fin semiconductor devices
- Patent number 11,075,266
- Issue date Jul 27, 2021
- International Business Machines Corporation
- Praveen Joseph
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with multiple threshold voltages
- Patent number 11,075,081
- Issue date Jul 27, 2021
- International Business Machines Corporation
- Praveen Joseph
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Additive core subtractive liner for metal cut etch processes
- Patent number 11,075,281
- Issue date Jul 27, 2021
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for equal substrate to channel height between...
- Patent number 11,043,494
- Issue date Jun 22, 2021
- International Business Machines Corporation
- Lawrence A. Clevenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin cut profile using fin base liner
- Patent number 10,985,025
- Issue date Apr 20, 2021
- International Business Machines Corporation
- Eric R. Miller
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FORK SHEET DEVICE WITH WRAPPED SOURCE AND DRAIN CONTACT TO PREVENT...
- Publication number 20240213243
- Publication date Jun 27, 2024
- International Business Machines Corporation
- Shravana Kumar Katakam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTORS WITH STEPPED CONTACTS
- Publication number 20240203984
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CONTROL FOR STAGGERED STACKED FIELD-EFFECT TRANSISTORS
- Publication number 20240194696
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Genevieve Antoinette Kane
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATE MIDDLE-OF-LINE GATE CUT WITH POWER BAR FORMATION
- Publication number 20240178142
- Publication date May 30, 2024
- International Business Machines Corporation
- Shravana Kumar Katakam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEPARATE EPITAXY IN MONOLITHIC STACKED AND STEPPED NANOSHEETS
- Publication number 20240178292
- Publication date May 30, 2024
- International Business Machines Corporation
- Indira Seshadri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLEXIBLE CELL BOUNDARY WITH CURVED GATE CUT REGION
- Publication number 20240072035
- Publication date Feb 29, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW AND DEEP CONTACTS WITH STITCHING
- Publication number 20230411212
- Publication date Dec 21, 2023
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING CROSSBAR AND NON-CROSSBAR TRANSISTORS ON THE SAME SUBSTRATE
- Publication number 20230369492
- Publication date Nov 16, 2023
- International Business Machines Corporation
- INDIRA SESHADRI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ASPECT RATIO CONTACT STRUCTURE WITH MULTIPLE METAL STACKS
- Publication number 20230317802
- Publication date Oct 5, 2023
- International Business Machines Corporation
- Junli Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BOTTOM SOURCE/DRAIN ETCH WITH FIN-CUT-LAST-VTFET
- Publication number 20230275141
- Publication date Aug 31, 2023
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR WITH CROSSLINK FIN ARRANGEMENT
- Publication number 20230207632
- Publication date Jun 29, 2023
- International Business Machines Corporation
- Indira Seshadri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOLVENT ANNEALING OF AN ORGANIC PLANARIZATION LAYER
- Publication number 20230197437
- Publication date Jun 22, 2023
- International Business Machines Corporation
- Jing Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICES WITH A LOW DIELECTRIC CONSTANT
- Publication number 20230197603
- Publication date Jun 22, 2023
- International Business Machines Corporation
- Hsueh-Chung CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSS BAR VERTICAL FETS
- Publication number 20230187541
- Publication date Jun 15, 2023
- International Business Machines Corporation
- Brent A. ANDERSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC REFLOW FOR BOUNDARY CONTROL
- Publication number 20230170348
- Publication date Jun 1, 2023
- International Business Machines Corporation
- Jing Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BOTTOM CONTACT FOR STACKED GAA FET
- Publication number 20230143705
- Publication date May 11, 2023
- International Business Machines Corporation
- Indira Seshadri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FET WITH CONTACT TO GATE ABOVE ACTIVE FIN
- Publication number 20230104456
- Publication date Apr 6, 2023
- International Business Machines Corporation
- Brent ANDERSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN CONTACT POSITIONING UNDER POWER RAIL
- Publication number 20230095508
- Publication date Mar 30, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSPORT FIELD-EFFECT TRANSISTOR WITH GATE PATTERNING
- Publication number 20230101011
- Publication date Mar 30, 2023
- International Business Machines Corporation
- RUILONG XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR BOUNDARY PROTECTION USING REVERSIBLE CROSSLINKING REFLOW
- Publication number 20230026989
- Publication date Jan 26, 2023
- International Business Machines Corporation
- Jing Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID DIFFUSION BREAK WITH EUV GATE PATTERNING
- Publication number 20220384568
- Publication date Dec 1, 2022
- International Business Machines Corporation
- Eric Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING CROSSBAR AND NON-CROSSBAR TRANSISTORS ON THE SAME SUBSTRATE
- Publication number 20220367700
- Publication date Nov 17, 2022
- International Business Machines Corporation
- INDIRA SESHADRI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SACRIFICIAL FIN FOR CONTACT SELF-ALIGNMENT
- Publication number 20220262923
- Publication date Aug 18, 2022
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR WITH CROSSLINK FIN ARRANGEMENT
- Publication number 20220199776
- Publication date Jun 23, 2022
- International Business Machines Corporation
- Indira Seshadri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAGGERED STACKED VERTICAL CRYSTALLINE SEMICONDUCTING CHANNELS
- Publication number 20220149042
- Publication date May 12, 2022
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BOTTOM SOURCE/DRAIN ETCH WITH FIN-CUT-LAST-VTFET
- Publication number 20220069106
- Publication date Mar 3, 2022
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL CUT PATTERNING AND ETCHING TO MINIMIZE INTERLAYER DIELECTRIC...
- Publication number 20220005698
- Publication date Jan 6, 2022
- International Business Machines Corporation
- Kisup Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SACRIFICIAL FIN FOR CONTACT SELF-ALIGNMENT
- Publication number 20210328041
- Publication date Oct 21, 2021
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAGGERED STACKED VERTICAL CRYSTALLINE SEMICONDUCTING CHANNELS
- Publication number 20210296314
- Publication date Sep 23, 2021
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICALLY STACKED FIN SEMICONDUCTOR DEVICES
- Publication number 20210296438
- Publication date Sep 23, 2021
- International Business Machines Corporation
- Praveen Joseph
- H01 - BASIC ELECTRIC ELEMENTS

Indira P. Seshadri

Person

Patents Grantslast 30 patents

Source/drain contact positioning under power rail

Bottom source/drain etch with fin-cut-last-VTFET

Vertical field effect transistor with crosslink fin arrangement

Metal cut patterning and etching to minimize interlayer dielectric...

Vertical transport field-effect transistor with gate patterning

Vertical FET with contact to gate above active fin

Transistor boundary protection using reversible crosslinking reflow

Staggered stacked vertical crystalline semiconducting channels

Forming crossbar and non-crossbar transistors on the same substrate

Hybrid diffusion break with EUV gate patterning

Bottom source/drain etch with fin-cut-last-VTFET

Sacrificial fin for contact self-alignment

Vertical field effect transistor with crosslink fin arrangement

Transistor structure with N/P boundary buffer

Surface treatment of titanium containing hardmasks

Enabling residue free gap fill between nanosheets

Patterning material film stack with hard mask layer configured to s...

Sacrificial fin for contact self-alignment

Additive core subtractive liner for metal cut etch processes

Staggered stacked vertical crystalline semiconducting channels

Bottom source/drain etch with fin-cut-last-VTFET

Self-priming resist for generic inorganic hardmasks

Additive core subtractive liner for metal cut etch processes

Metal cut patterning and etching to minimize interlayer dielectric...

Tunable hardmask for overlayer metrology contrast

Vertically stacked fin semiconductor devices

Semiconductor device with multiple threshold voltages

Additive core subtractive liner for metal cut etch processes

Structure and method for equal substrate to channel height between...

Fin cut profile using fin base liner

Patents Applicationslast 30 patents

FORK SHEET DEVICE WITH WRAPPED SOURCE AND DRAIN CONTACT TO PREVENT...

STACKED TRANSISTORS WITH STEPPED CONTACTS

GATE CONTROL FOR STAGGERED STACKED FIELD-EFFECT TRANSISTORS

LATE MIDDLE-OF-LINE GATE CUT WITH POWER BAR FORMATION

SEPARATE EPITAXY IN MONOLITHIC STACKED AND STEPPED NANOSHEETS

FLEXIBLE CELL BOUNDARY WITH CURVED GATE CUT REGION

SHALLOW AND DEEP CONTACTS WITH STITCHING

FORMING CROSSBAR AND NON-CROSSBAR TRANSISTORS ON THE SAME SUBSTRATE

HIGH ASPECT RATIO CONTACT STRUCTURE WITH MULTIPLE METAL STACKS

BOTTOM SOURCE/DRAIN ETCH WITH FIN-CUT-LAST-VTFET

VERTICAL FIELD EFFECT TRANSISTOR WITH CROSSLINK FIN ARRANGEMENT

SOLVENT ANNEALING OF AN ORGANIC PLANARIZATION LAYER

ELECTRONIC DEVICES WITH A LOW DIELECTRIC CONSTANT

CROSS BAR VERTICAL FETS

DIELECTRIC REFLOW FOR BOUNDARY CONTROL

BOTTOM CONTACT FOR STACKED GAA FET

VERTICAL FET WITH CONTACT TO GATE ABOVE ACTIVE FIN

SOURCE/DRAIN CONTACT POSITIONING UNDER POWER RAIL

VERTICAL TRANSPORT FIELD-EFFECT TRANSISTOR WITH GATE PATTERNING

TRANSISTOR BOUNDARY PROTECTION USING REVERSIBLE CROSSLINKING REFLOW

HYBRID DIFFUSION BREAK WITH EUV GATE PATTERNING

FORMING CROSSBAR AND NON-CROSSBAR TRANSISTORS ON THE SAME SUBSTRATE

SACRIFICIAL FIN FOR CONTACT SELF-ALIGNMENT

VERTICAL FIELD EFFECT TRANSISTOR WITH CROSSLINK FIN ARRANGEMENT

STAGGERED STACKED VERTICAL CRYSTALLINE SEMICONDUCTING CHANNELS

BOTTOM SOURCE/DRAIN ETCH WITH FIN-CUT-LAST-VTFET

METAL CUT PATTERNING AND ETCHING TO MINIMIZE INTERLAYER DIELECTRIC...

SACRIFICIAL FIN FOR CONTACT SELF-ALIGNMENT

STAGGERED STACKED VERTICAL CRYSTALLINE SEMICONDUCTING CHANNELS

VERTICALLY STACKED FIN SEMICONDUCTOR DEVICES