Jacob Riseman

Person

Poughkeepsie, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Chem-mech polishing method for producing coplanar metal/insulator f...
- Patent number 4,944,836
- Issue date Jul 31, 1990
- International Business Machines Corporation
- Klaus D. Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sidewall spacers for CMOS circuit stress relief/isolation and metho...
- Patent number 4,729,006
- Issue date Mar 1, 1988
- International Business Machines Corporation
- Anthony J. Dally
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure for contacting a narrow width PN junction region
- Patent number 4,712,125
- Issue date Dec 8, 1987
- International Business Machines Corporation
- Harsaran S. Bhatia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming planar chip-level wiring
- Patent number 4,689,113
- Issue date Aug 25, 1987
- International Business Machines Corporation
- Karanam Balasubramanyam
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Method for removing protuberances at the surface of a semiconductor...
- Patent number 4,671,851
- Issue date Jun 9, 1987
- International Business Machines Corporation
- Klaus D. Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of preventing asymmetric etching of lines in sub-micrometer...
- Patent number 4,648,937
- Issue date Mar 10, 1987
- International Business Machines Corporation
- Seiki Ogura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned lateral bipolar transistors
- Patent number 4,641,170
- Issue date Feb 3, 1987
- International Business Machines Corporation
- Seiki Ogura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication methods for high performance lateral bipolar transistors
- Patent number 4,583,106
- Issue date Apr 15, 1986
- International Business Machines Corporation
- Narasipur G. Anantha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making self-aligned lateral bipolar transistors
- Patent number 4,551,906
- Issue date Nov 12, 1985
- International Business Machines Corporation
- Seiki Ogura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication methods for high performance lateral bipolar transistors
- Patent number 4,546,536
- Issue date Oct 15, 1985
- International Business Machines Corporation
- Narasipur G. Anantha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep dielectric isolation by fused glass
- Patent number 4,544,576
- Issue date Oct 1, 1985
- International Business Machines Corporation
- Wei-Kan Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making integrated circuits using metal silicide contacts
- Patent number 4,521,952
- Issue date Jun 11, 1985
- International Business Machines Corporation
- Jacob Riseman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for contacting a narrow width PN junction region
- Patent number 4,507,171
- Issue date Mar 26, 1985
- International Business Machines Corporation
- Harsaran S. Bhatia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming recessed isolated regions
- Patent number 4,506,435
- Issue date Mar 26, 1985
- International Business Machines Corporation
- William A. Pliskin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a planarized integrated circuit
- Patent number 4,492,717
- Issue date Jan 8, 1985
- International Business Machines Corporation
- William A. Pliskin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making high sheet resistivity resistors
- Patent number 4,464,212
- Issue date Aug 7, 1984
- International Business Machines Corporation
- Harsaran S. Bhatia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single electrode U-MOSFET random access memory
- Patent number 4,462,040
- Issue date Jul 24, 1984
- International Business Machines Corporation
- Irving T. Ho
- G11 - INFORMATION STORAGE
Information Patent Grant
Self-aligned field effect transistor process
- Patent number 4,419,810
- Issue date Dec 13, 1983
- International Business Machines Corporation
- Jacob Riseman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication process of sub-micrometer channel length MOSFETs
- Patent number 4,419,809
- Issue date Dec 13, 1983
- International Business Machines Corporation
- Jacob Riseman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming air-dielectric isolation regions in a monocrystalline silic...
- Patent number 4,356,211
- Issue date Oct 26, 1982
- International Business Machines Corporation
- Jacob Riseman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making single electrode U-MOSFET random access memory ut...
- Patent number 4,252,579
- Issue date Feb 24, 1981
- International Business Machines Corporation
- Irving T. Ho
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for forming an insulator between layers of conductive material
- Patent number 4,234,362
- Issue date Nov 18, 1980
- International Business Machines Corporation
- Jacob Riseman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a narrow dimensioned mask opening on a silicon b...
- Patent number 4,209,349
- Issue date Jun 24, 1980
- International Business Machines Corporation
- Irving T. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming diffusions having narrow dimensions utilizing re...
- Patent number 4,209,350
- Issue date Jun 24, 1980
- International Business Machines Corporation
- Irving T. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an integrated circuit structure with fully-enclos...
- Patent number 4,169,000
- Issue date Sep 25, 1979
- International Business Machines Corporation
- Jacob Riseman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure with fully enclosed air isolation
- Patent number 4,106,050
- Issue date Aug 8, 1978
- International Business Machines Corporation
- Jacob Riseman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge injector transistor memory
- Patent number 4,090,254
- Issue date May 16, 1978
- International Business Machines Corporation
- Irving Tze Ho
- G11 - INFORMATION STORAGE
Information Patent Grant
Composite channel field effect transistor and method of fabrication
- Patent number 4,070,687
- Issue date Jan 24, 1978
- International Business Machines Corporation
- Irving Tze Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High reliability, low leakage, self-aligned silicon gate FET and me...
- Patent number 4,054,989
- Issue date Oct 25, 1977
- International Business Machines Corporation
- Irving T. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Beam-lead integrated circuit structure and method for making the sa...
- Patent number 4,032,058
- Issue date Jun 28, 1977
- IBM Corporation
- Jacob Riseman
- H01 - BASIC ELECTRIC ELEMENTS

Jacob Riseman

Person

Patents Grantslast 30 patents

Chem-mech polishing method for producing coplanar metal/insulator f...

Sidewall spacers for CMOS circuit stress relief/isolation and metho...

Structure for contacting a narrow width PN junction region

Process for forming planar chip-level wiring

Method for removing protuberances at the surface of a semiconductor...

Method of preventing asymmetric etching of lines in sub-micrometer...

Self-aligned lateral bipolar transistors

Fabrication methods for high performance lateral bipolar transistors

Method for making self-aligned lateral bipolar transistors

Fabrication methods for high performance lateral bipolar transistors

Deep dielectric isolation by fused glass

Method of making integrated circuits using metal silicide contacts

Method for contacting a narrow width PN junction region

Method for forming recessed isolated regions

Method for forming a planarized integrated circuit

Method for making high sheet resistivity resistors

Single electrode U-MOSFET random access memory

Self-aligned field effect transistor process

Fabrication process of sub-micrometer channel length MOSFETs

Forming air-dielectric isolation regions in a monocrystalline silic...

Method for making single electrode U-MOSFET random access memory ut...

Method for forming an insulator between layers of conductive material

Method for forming a narrow dimensioned mask opening on a silicon b...

Method for forming diffusions having narrow dimensions utilizing re...

Method of forming an integrated circuit structure with fully-enclos...

Integrated circuit structure with fully enclosed air isolation

Charge injector transistor memory

Composite channel field effect transistor and method of fabrication

High reliability, low leakage, self-aligned silicon gate FET and me...

Beam-lead integrated circuit structure and method for making the sa...