Jae Gon Lee

Person

Waterford, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Scaled gate contact and source/drain cap
- Patent number 11,569,356
- Issue date Jan 31, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scaled gate contact and source/drain cap
- Patent number 10,892,338
- Issue date Jan 12, 2021
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming gate structures for transistor devices on an IC...
- Patent number 10,755,982
- Issue date Aug 25, 2020
- GLOBALFOUNDRIES Inc.
- Abu Naser M. Zainuddin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-type transistors with spacers on the gates
- Patent number 10,636,894
- Issue date Apr 28, 2020
- GLOBALFOUNDRIES Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI device structures with doped regions providing charge sinking
- Patent number 10,593,754
- Issue date Mar 17, 2020
- GLOBALFOUNDRIES Inc.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFETs having gates parallel to fins
- Patent number 10,553,707
- Issue date Feb 4, 2020
- GLOBALFOUNDRIES Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scaled memory structures or other logic devices with middle of the...
- Patent number 10,475,890
- Issue date Nov 12, 2019
- GLOBALFOUNDRIES Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical FINFET structure and methods of forming same
- Patent number 10,090,204
- Issue date Oct 2, 2018
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure incorporating non-planar field effect...
- Patent number 10,068,902
- Issue date Sep 4, 2018
- GLOBALFOUNDRIES Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked nanosheet field-effect transistor with diode isolation
- Patent number 9,847,391
- Issue date Dec 19, 2017
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SCALED GATE CONTACT AND SOURCE/DRAIN CAP
- Publication number 20210066464
- Publication date Mar 4, 2021
- GLOBALFOUNDRIES INC.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SHORT-CHANNEL AND LONG-CHANNEL TRANSISTOR DEVICE...
- Publication number 20200273953
- Publication date Aug 27, 2020
- GLOBALFOUNDRIES INC.
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCALED GATE CONTACT AND SOURCE/DRAIN CAP
- Publication number 20200135872
- Publication date Apr 30, 2020
- GLOBALFOUNDRIES INC.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFETS HAVING GATES PARALLEL TO FINS
- Publication number 20200066883
- Publication date Feb 27, 2020
- GLOBALFOUNDRIES INC.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI DEVICE STRUCTURES WITH DOPED REGIONS PROVIDING CHARGE SINKING
- Publication number 20200035785
- Publication date Jan 30, 2020
- GLOBALFOUNDRIES INC.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-TYPE TRANSISTORS WITH SPACERS ON THE GATES
- Publication number 20190280105
- Publication date Sep 12, 2019
- GLOBALFOUNDRIES INC.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCALED MEMORY STRUCTURES OR OTHER LOGIC DEVICES WITH MIDDLE OF THE...
- Publication number 20190109197
- Publication date Apr 11, 2019
- GLOBALFOUNDRIES INC.
- Haiting WANG
- H01 - BASIC ELECTRIC ELEMENTS

Jae Gon Lee

Person

Patents Grantslast 30 patents

Scaled gate contact and source/drain cap

Scaled gate contact and source/drain cap

Methods of forming gate structures for transistor devices on an IC...

Fin-type transistors with spacers on the gates

SOI device structures with doped regions providing charge sinking

FinFETs having gates parallel to fins

Scaled memory structures or other logic devices with middle of the...

Vertical FINFET structure and methods of forming same

Integrated circuit structure incorporating non-planar field effect...

Stacked nanosheet field-effect transistor with diode isolation

Patents Applicationslast 30 patents

SCALED GATE CONTACT AND SOURCE/DRAIN CAP

METHODS OF FORMING SHORT-CHANNEL AND LONG-CHANNEL TRANSISTOR DEVICE...

SCALED GATE CONTACT AND SOURCE/DRAIN CAP

FINFETS HAVING GATES PARALLEL TO FINS

SOI DEVICE STRUCTURES WITH DOPED REGIONS PROVIDING CHARGE SINKING

FIN-TYPE TRANSISTORS WITH SPACERS ON THE GATES

SCALED MEMORY STRUCTURES OR OTHER LOGIC DEVICES WITH MIDDLE OF THE...