Jaehong LEE

Person

Latham, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device including gate contact structure formed from g...
- Patent number 12,211,837
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Myunghoon Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices including discharging path and methods o...
- Patent number 12,087,669
- Issue date Sep 10, 2024
- Samsung Electronics Co., Ltd.
- Jaehong Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MACRO DEVICE-UNDER-TEST STRUCTURE FOR MEASURING CONTACT RESISTANCE...
- Publication number 20240387555
- Publication date Nov 21, 2024
- Samsung Electronics Co., Ltd.
- Jaehong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE INCLUDING STACKED TRANSISTORS AND METHODS...
- Publication number 20240363633
- Publication date Oct 31, 2024
- Samsung Electronics Co., Ltd.
- MYUNG YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED INTEGRATED CIRCUIT DEVICES INCLUDING STAGGERED GATE STRUCTU...
- Publication number 20240355879
- Publication date Oct 24, 2024
- Samsung Electronics Co., Ltd.
- SEUNG MIN SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING BACKSIDE ISOLATION STRUCTURE AND PLA...
- Publication number 20240290834
- Publication date Aug 29, 2024
- Samsung Electronics Co., Ltd.
- Jaehong LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-STACK NANOSHEET STRUCTURE INCLUDING SEMICONDUCTOR DEVICE
- Publication number 20240023326
- Publication date Jan 18, 2024
- Samsung Electronics Co., Ltd.
- Byounghak HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING METALLIC SOURCE/DRAIN REGIONS
- Publication number 20230420459
- Publication date Dec 28, 2023
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE AND BIPOLAR JUNCTION TRANSISTOR FOR 3D SFET WITH BSPDN STRUCTURE
- Publication number 20230411353
- Publication date Dec 21, 2023
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS AND P-N JUNCTION DIODES INCLUDING STAC...
- Publication number 20230361112
- Publication date Nov 9, 2023
- Samsung Electronics Co. Ltd.
- BYOUNGHAK HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE HAVING DIFFERENT CHANNEL AND GATE D...
- Publication number 20230352528
- Publication date Nov 2, 2023
- Samsung Electronics Co., Ltd.
- Keumseok PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR STRUCTURE INCLUDING PASSIVE DEVICE AND BACK...
- Publication number 20230163202
- Publication date May 25, 2023
- Samsung Electronics Co., Ltd.
- Jaehong LEE
- H01 - BASIC ELECTRIC ELEMENTS

Jaehong LEE

Person

Patents Grantslast 30 patents

Semiconductor device including gate contact structure formed from g...

Integrated circuit devices including discharging path and methods o...

Patents Applicationslast 30 patents

MACRO DEVICE-UNDER-TEST STRUCTURE FOR MEASURING CONTACT RESISTANCE...

INTEGRATED CIRCUIT DEVICE INCLUDING STACKED TRANSISTORS AND METHODS...

STACKED INTEGRATED CIRCUIT DEVICES INCLUDING STAGGERED GATE STRUCTU...

SEMICONDUCTOR DEVICE INCLUDING BACKSIDE ISOLATION STRUCTURE AND PLA...

MULTI-STACK NANOSHEET STRUCTURE INCLUDING SEMICONDUCTOR DEVICE

INTEGRATED CIRCUIT DEVICES INCLUDING METALLIC SOURCE/DRAIN REGIONS

DIODE AND BIPOLAR JUNCTION TRANSISTOR FOR 3D SFET WITH BSPDN STRUCTURE

BIPOLAR JUNCTION TRANSISTORS AND P-N JUNCTION DIODES INCLUDING STAC...

3D-STACKED SEMICONDUCTOR DEVICE HAVING DIFFERENT CHANNEL AND GATE D...

FIELD-EFFECT TRANSISTOR STRUCTURE INCLUDING PASSIVE DEVICE AND BACK...