James A. Benjamin

Person

Waukesha, WI, US

People

Patents Grantslast 30 patents

Information Patent Grant
Multi-layer semiconductor processing with scavenging between layers...
- Patent number 4,685,976
- Issue date Aug 11, 1987
- Eaton Corporation
- Steven R. Schachameyer
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for making horizontally layered momom tunnel device
- Patent number 4,675,979
- Issue date Jun 30, 1987
- Eaton Corporation
- Robert W. Lade
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making vertically layered MOMOM tunnel device
- Patent number 4,675,980
- Issue date Jun 30, 1987
- Eaton Corporation
- Robert W. Lade
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-channel power JFET with buried field shaping regions
- Patent number 4,670,764
- Issue date Jun 2, 1987
- Eaton Corporation
- James A. Benjamin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor processing technique with differentially fluxed radia...
- Patent number 4,670,063
- Issue date Jun 2, 1987
- Eaton Corporation
- Steven R. Schachameyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Generating high purity ions by non-thermal excimer laser processing
- Patent number 4,670,064
- Issue date Jun 2, 1987
- Eaton Corporation
- Steven R. Schachameyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dopant gettering semiconductor processing by excimer laser
- Patent number 4,668,304
- Issue date May 26, 1987
- Eaton Corporation
- Steven R. Schachameyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor processing technique for generating dangling surface...
- Patent number 4,655,849
- Issue date Apr 7, 1987
- Eaton Corporation
- Steven R. Schachameyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically layered MOMOM tunnel device
- Patent number 4,642,665
- Issue date Feb 10, 1987
- Eaton Corporation
- Robert W. Lade
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split row power JFET
- Patent number 4,635,084
- Issue date Jan 6, 1987
- Eaton Corporation
- James A. Benjamin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontally layered MOMOM notch tunnel device
- Patent number 4,633,278
- Issue date Dec 30, 1986
- Eaton Corporation
- Robert W. Lade
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual stack power JFET with buried field shaping depletion regions
- Patent number 4,633,281
- Issue date Dec 30, 1986
- Eaton Corporation
- James A. Benjamin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid state display
- Patent number 4,624,533
- Issue date Nov 25, 1986
- Eaton Corporation
- Herman P. Schutten
- G02 - OPTICS
Information Patent Grant
Lateral bidirectional power FET with notched multi-channel stacking...
- Patent number 4,622,569
- Issue date Nov 11, 1986
- Eaton Corporation
- Robert W. Lade
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar field-shaped bidirectional power FET
- Patent number 4,622,568
- Issue date Nov 11, 1986
- Eaton Corporation
- Herman P. Schutten
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bidirectional notch FET with gates at non-common potentials
- Patent number 4,612,465
- Issue date Sep 16, 1986
- Eaton Corporation
- Herman P. Schutten
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
AC Solar cell
- Patent number 4,577,052
- Issue date Mar 18, 1986
- Eaton Corporation
- Herman P. Schutten
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Bidirectional power FET with integral avalanche protection
- Patent number 4,577,208
- Issue date Mar 18, 1986
- Eaton Corporation
- Herman P. Schutten
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Raised split gate EFET and circuitry
- Patent number 4,574,208
- Issue date Mar 4, 1986
- Eaton Corporation
- Robert W. Lade
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bidirectional dual notch FET with non-planar main electrodes
- Patent number 4,574,207
- Issue date Mar 4, 1986
- Eaton Corporation
- James A. Benjamin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate EFET and circuitry
- Patent number 4,574,209
- Issue date Mar 4, 1986
- Eaton Corporation
- Robert W. Lade
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bidirectional shielded notch FET
- Patent number 4,571,512
- Issue date Feb 18, 1986
- Eaton Corporation
- Herman P. Schutten
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bidirectional dual notch shielded FET
- Patent number 4,571,513
- Issue date Feb 18, 1986
- Eaton Corporation
- Robert W. Lade
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density, high voltage power FET
- Patent number 4,571,606
- Issue date Feb 18, 1986
- Eaton Corporation
- James A. Benjamin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional power FET with shorting-channel off state
- Patent number 4,558,243
- Issue date Dec 10, 1985
- Eaton Corporation
- Herman P. Schutten
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Bidirectional power FET with field shaping
- Patent number 4,553,151
- Issue date Nov 12, 1985
- Eaton Corporation
- Herman P. Schutten
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bidirectional notch FET with extended gate insulator
- Patent number 4,546,367
- Issue date Oct 8, 1985
- Eaton Corporation
- Herman P. Schutten
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trapped charge bidirectional power FET
- Patent number 4,542,396
- Issue date Sep 17, 1985
- Eaton Corporation
- Herman P. Schutten
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional power FET with substrate-referenced shield
- Patent number 4,541,001
- Issue date Sep 10, 1985
- Eaton Corporation
- Herman P. Schutten
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
AC solar cell with alternately generated pn junctions
- Patent number 4,533,783
- Issue date Aug 6, 1985
- Eaton Corporation
- James A. Benjamin
- H01 - BASIC ELECTRIC ELEMENTS

James A. Benjamin

Person

Patents Grantslast 30 patents

Multi-layer semiconductor processing with scavenging between layers...

Method for making horizontally layered momom tunnel device

Method for making vertically layered MOMOM tunnel device

Multi-channel power JFET with buried field shaping regions

Semiconductor processing technique with differentially fluxed radia...

Generating high purity ions by non-thermal excimer laser processing

Dopant gettering semiconductor processing by excimer laser

Semiconductor processing technique for generating dangling surface...

Vertically layered MOMOM tunnel device

Split row power JFET

Horizontally layered MOMOM notch tunnel device

Dual stack power JFET with buried field shaping depletion regions

Solid state display

Lateral bidirectional power FET with notched multi-channel stacking...

Planar field-shaped bidirectional power FET

Lateral bidirectional notch FET with gates at non-common potentials

AC Solar cell

Bidirectional power FET with integral avalanche protection

Raised split gate EFET and circuitry

Lateral bidirectional dual notch FET with non-planar main electrodes

Split gate EFET and circuitry

Lateral bidirectional shielded notch FET

Lateral bidirectional dual notch shielded FET

High density, high voltage power FET

Bidirectional power FET with shorting-channel off state

Bidirectional power FET with field shaping

Lateral bidirectional notch FET with extended gate insulator

Trapped charge bidirectional power FET

Bidirectional power FET with substrate-referenced shield

AC solar cell with alternately generated pn junctions