James G. Boyd

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Pflugerville, TX, US

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Patents Grantslast 30 patents

Information Patent Grant
Deep trench isolation and substrate connection on SOI
- Patent number 11,127,622
- Issue date Sep 21, 2021
- NXP USA, INC.
- James Gordon Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recessed poly extension T-gate
- Patent number 7,534,706
- Issue date May 19, 2009
- FREESCALE SEMICONDUCTOR, INC.
- James G. Boyd
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
OPTIMAL HIGH VOLTAGE TUB DESIGN WITH FLOATING POLY TRENCHES
- Publication number 20250046651
- Publication date Feb 6, 2025
- NXP B.V.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYCRYSTALLINE SEMICONDUCTOR RESISTOR
- Publication number 20230395646
- Publication date Dec 7, 2023
- NXP USA, Inc.
- Ronghua Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Deep Trench Isolation And Substrate Connection on SOI
- Publication number 20210217655
- Publication date Jul 15, 2021
- NXP USA, Inc.
- James Gordon Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Recessed poly extension T-gate
- Publication number 20070184642
- Publication date Aug 9, 2007
- Freescale Semiconductor, Inc.
- James G. Boyd
- H01 - BASIC ELECTRIC ELEMENTS