James R. Shealy

Person

Ithaca, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for implant and anneal for high voltage field effect transis...
- Patent number 12,068,161
- Issue date Aug 20, 2024
- Power Integrations, Inc.
- James R. Shealy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Beryllium doped GaN-based light emitting diode and method
- Patent number 12,062,738
- Issue date Aug 13, 2024
- Power Integrations, Inc.
- James R. Shealy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Beryllium doped GaN-based light emitting diode and method
- Patent number 12,046,699
- Issue date Jul 23, 2024
- Power Integrations, Inc.
- James R. Shealy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor device and method of fabrication
- Patent number 11,942,537
- Issue date Mar 26, 2024
- Odyssey Semiconductor, Inc.
- James R. Shealy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor device and method of fabrication
- Patent number 11,652,165
- Issue date May 16, 2023
- Odyssey Semiconductor, Inc.
- James R. Shealy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Beryllium doped GaN-based light emitting diode and method
- Patent number 11,469,348
- Issue date Oct 11, 2022
- Odyssey Semiconductor, Inc.
- James R. Shealy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor device and method of fabrication
- Patent number 11,251,295
- Issue date Feb 15, 2022
- Odyssey Semiconductor, Inc.
- James R. Shealy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming III-V semiconductor structures including aluminu...
- Patent number 9,991,360
- Issue date Jun 5, 2018
- Cornell University
- James R. Shealy
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Grant
III-V semiconductor structures including aluminum-silicon nitride p...
- Patent number 9,306,050
- Issue date Apr 5, 2016
- Cornell University
- James R. Shealy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gated III-V semiconductor structure and method
- Patent number 9,299,821
- Issue date Mar 29, 2016
- Cornell University
- James R. Shealy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chemical vapor deposition process for aluminum silicon nitride
- Patent number 8,791,034
- Issue date Jul 29, 2014
- Cornell University
- James R. Shealy
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Single step, high temperature nucleation process for a lattice mism...
- Patent number 7,250,360
- Issue date Jul 31, 2007
- Cornell Research Foundation, Inc.
- James R. Shealy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single step process for epitaxial lateral overgrowth of nitride bas...
- Patent number 6,478,871
- Issue date Nov 12, 2002
- Cornell Research Foundation, Inc.
- James R. Shealy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect semiconductor device having dipole barrier
- Patent number 6,150,680
- Issue date Nov 21, 2000
- Welch Allyn, Inc.
- Lester Fuess Eastman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for synthesis of cubic GaN on GaAs using NH.sub.3 in an RF...
- Patent number 5,834,379
- Issue date Nov 10, 1998
- Cornell Research Foundation, Inc.
- James R. Shealy
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
High power (1,4 W)AlGaInP graded-index separate confinement heteros...
- Patent number 5,003,548
- Issue date Mar 26, 1991
- Cornell Research Foundation, Inc.
- David P. Bour
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method and apparatus for improved gettering for reactant gases
- Patent number 4,564,509
- Issue date Jan 14, 1986
- Northeast Semiconductor Inc.
- James R. Shealy
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR DEVICE AND METHOD OF FABRICATION
- Publication number 20240213363
- Publication date Jun 27, 2024
- Odyssey Semiconductor, Inc.
- James R. SHEALY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR DEVICE AND METHOD OF FABRICATION
- Publication number 20230387289
- Publication date Nov 30, 2023
- Odyssey Semiconductor, Inc.
- James R. SHEALY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BERYLLIUM DOPED GaN-BASED LIGHT EMITTING DIODE AND METHOD
- Publication number 20230008120
- Publication date Jan 12, 2023
- Odyssey Semiconductor, Inc.
- James R. SHEALY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BERYLLIUM DOPED GaN-BASED LIGHT EMITTING DIODE AND METHOD
- Publication number 20230010911
- Publication date Jan 12, 2023
- Odyssey Semiconductor, Inc.
- James R. SHEALY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR DEVICE AND METHOD OF FABRICATION
- Publication number 20220140130
- Publication date May 5, 2022
- Odyssey Semiconductor, Inc.
- James R. SHEALY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATED III-V SEMICONDUCTOR STRUCTURE AND METHOD
- Publication number 20130153963
- Publication date Jun 20, 2013
- Cornell University
- James R. Shealy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHEMICAL VAPOR DEPOSITION PROCESS FOR ALUMINUM SILICON NITRIDE
- Publication number 20120156895
- Publication date Jun 21, 2012
- Cornell University
- James R. Shealy
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
III-V SEMICONDUCTOR STRUCTURES INCLUDING ALUMINUM-SILICON NITRIDE P...
- Publication number 20120153301
- Publication date Jun 21, 2012
- Cornell University
- James R. Shealy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING III-V SEMICONDUCTOR STRUCTURES INCLUDING ALUMINU...
- Publication number 20120156836
- Publication date Jun 21, 2012
- Cornell University
- James R. Shealy
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Application
Single step, high temperature nucleation process for a lattice mism...
- Publication number 20060199364
- Publication date Sep 7, 2006
- James R. Shealy
- H01 - BASIC ELECTRIC ELEMENTS

James R. Shealy

Person

Patents Grantslast 30 patents

Method for implant and anneal for high voltage field effect transis...

Beryllium doped GaN-based light emitting diode and method

Beryllium doped GaN-based light emitting diode and method

Vertical field effect transistor device and method of fabrication

Vertical field effect transistor device and method of fabrication

Beryllium doped GaN-based light emitting diode and method

Vertical field effect transistor device and method of fabrication

Method for forming III-V semiconductor structures including aluminu...

III-V semiconductor structures including aluminum-silicon nitride p...

Gated III-V semiconductor structure and method

Chemical vapor deposition process for aluminum silicon nitride

Single step, high temperature nucleation process for a lattice mism...

Single step process for epitaxial lateral overgrowth of nitride bas...

Field effect semiconductor device having dipole barrier

Process for synthesis of cubic GaN on GaAs using NH.sub.3 in an RF...

High power (1,4 W)AlGaInP graded-index separate confinement heteros...

Method and apparatus for improved gettering for reactant gases

Patents Applicationslast 30 patents

VERTICAL FIELD EFFECT TRANSISTOR DEVICE AND METHOD OF FABRICATION

VERTICAL FIELD EFFECT TRANSISTOR DEVICE AND METHOD OF FABRICATION

BERYLLIUM DOPED GaN-BASED LIGHT EMITTING DIODE AND METHOD

BERYLLIUM DOPED GaN-BASED LIGHT EMITTING DIODE AND METHOD

VERTICAL FIELD EFFECT TRANSISTOR DEVICE AND METHOD OF FABRICATION

GATED III-V SEMICONDUCTOR STRUCTURE AND METHOD

CHEMICAL VAPOR DEPOSITION PROCESS FOR ALUMINUM SILICON NITRIDE

III-V SEMICONDUCTOR STRUCTURES INCLUDING ALUMINUM-SILICON NITRIDE P...

METHOD FOR FORMING III-V SEMICONDUCTOR STRUCTURES INCLUDING ALUMINU...

Single step, high temperature nucleation process for a lattice mism...