Jane A. Yater

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Split gate device with doped region and method therefor
- Patent number 10,026,820
- Issue date Jul 17, 2018
- NXP USA, INC.
- Weize Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming split gate memory with improved reliability
- Patent number 9,847,397
- Issue date Dec 19, 2017
- NXP USA, INC.
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scalable split gate memory cell array
- Patent number 9,685,339
- Issue date Jun 20, 2017
- NXP USA, INC.
- Jane A. Yater
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming split gate memory with improved reliability
- Patent number 9,397,176
- Issue date Jul 19, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory (NVM) cell and a method of making
- Patent number 9,397,201
- Issue date Jul 19, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Jacob T. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming contact landing regions in split-gate non-volat...
- Patent number 9,331,092
- Issue date May 3, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Jane A. Yater
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form a polysilicon nanocrystal thin film storage bitcell...
- Patent number 9,275,864
- Issue date Mar 1, 2016
- Freescale Semiconductor,INC
- Asanga H Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated split gate non-volatile memory cell and logic device
- Patent number 9,252,246
- Issue date Feb 2, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Asanga H Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory (NVM) cell
- Patent number 9,219,167
- Issue date Dec 22, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Jacob T. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory (NVM) and high-k and metal gate integration usi...
- Patent number 9,129,855
- Issue date Sep 8, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Asanga H Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated split gate non-volatile memory cell and logic structure
- Patent number 9,082,650
- Issue date Jul 14, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Asanga H. Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming contact landing regions in split-gate non-volat...
- Patent number 9,054,208
- Issue date Jun 9, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Jane A. Yater
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory (NVM) and high voltage transistor integration
- Patent number 9,006,093
- Issue date Apr 14, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of gate strapping in split-gate memory cell with inlaid gate
- Patent number 8,969,940
- Issue date Mar 3, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Jane A Yater
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate non-volatile memory cell
- Patent number 8,962,416
- Issue date Feb 24, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory (NVM) and high-K and metal gate integration usi...
- Patent number 8,901,632
- Issue date Dec 2, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Asanga H. Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having different non-volatile memories having...
- Patent number 8,679,912
- Issue date Mar 25, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Sung-Taeg Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for integrating a non-volatile memory (NVM)
- Patent number 8,431,471
- Issue date Apr 30, 2013
- FREESCALE SEMICONDUCTOR, INC.
- Jane A. Yater
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a split-gate memory cell
- Patent number 8,372,699
- Issue date Feb 12, 2013
- FREESCALE SEMICONDUCTOR, INC.
- Sung-Taeg Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a semiconductor device having nanocrystals
- Patent number 8,329,543
- Issue date Dec 11, 2012
- FREESCALE SEMICONDUCTOR, INC.
- Sung-Taeg Kang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for forming a semiconductor device having nanocrystals
- Patent number 8,329,544
- Issue date Dec 11, 2012
- FREESCALE SEMICONDUCTOR, INC.
- Sung-Taeg Kang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Self-aligned in-laid split gate memory and method of making
- Patent number 7,902,022
- Issue date Mar 8, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Sung-Taeg Kang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Split-gate thin film storage NVM cell with reduced load-up/trap-up...
- Patent number 7,811,886
- Issue date Oct 12, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming an electronic device including discontinuous sto...
- Patent number 7,642,163
- Issue date Jan 5, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Rajesh A. Rao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device including a memory array and conductive lines
- Patent number 7,471,560
- Issue date Dec 30, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Jane A. Yater
- G11 - INFORMATION STORAGE
Information Patent Grant
Process for operating an electronic device including a memory array...
- Patent number 7,262,997
- Issue date Aug 28, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Jane A. Yater
- G11 - INFORMATION STORAGE
Information Patent Grant
Electronic device including discontinuous storage elements and a pr...
- Patent number 7,256,454
- Issue date Aug 14, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Jane A. Yater
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for forming a multi-bit non-volatile memory device
- Patent number 7,064,030
- Issue date Jun 20, 2006
- FREESCALE SEMICONDUCTOR, INC.
- Gowrishankar L. Chindalore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory having a reference transistor
- Patent number 6,969,883
- Issue date Nov 29, 2005
- FREESCALE SEMICONDUCTOR, INC.
- Gowrishankar L. Chindalore
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for removing nanoclusters from selected regions
- Patent number 6,964,902
- Issue date Nov 15, 2005
- FREESCALE SEMICONDUCTOR, INC.
- Robert F. Steimle
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SPLIT GATE DEVICE WITH DOPED REGION AND METHOD THEREFOR
- Publication number 20170278937
- Publication date Sep 28, 2017
- FREESCALE SEMICONDUCTOR, INC.
- WEIZE CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SPLIT GATE MEMORY WITH IMPROVED RELIABILITY
- Publication number 20160300919
- Publication date Oct 13, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Cheong Min HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY (NVM) CELL AND A METHOD OF MAKING
- Publication number 20160071960
- Publication date Mar 10, 2016
- FREESCALE SEMICONDUCTOR, INC.
- JACOB T. WILLIAMS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SPLIT GATE MEMORY WITH IMPROVED RELIABILITY
- Publication number 20160035848
- Publication date Feb 4, 2016
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods For Forming Contact Landing Regions In Split-Gate Non-Volat...
- Publication number 20150236035
- Publication date Aug 20, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Jane A. Yater
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY (NVM) CELL AND A METHOD OF MAKING
- Publication number 20150179816
- Publication date Jun 25, 2015
- JACOB T. WILLIAMS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY (NVM) AND HIGH-K AND METAL GATE INTEGRATION USI...
- Publication number 20150091079
- Publication date Apr 2, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Asanga H. Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods For Forming Contact Landing Regions In Split-Gate Non-Volat...
- Publication number 20150069490
- Publication date Mar 12, 2015
- JANE A. YATER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to Form a Polysilicon Nanocrystal Thin Film Storage Bitcell...
- Publication number 20150054044
- Publication date Feb 26, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Asanga H. Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED SPLIT GATE NON-VOLATILE MEMORY CELL AND LOGIC STRUCTURE
- Publication number 20150054049
- Publication date Feb 26, 2015
- Asanga H. PERERA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE NON-VOLATILE MEMORY CELL
- Publication number 20150035034
- Publication date Feb 5, 2015
- BRIAN A. WINSTEAD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY (NVM) AND HIGH VOLTAGE TRANSISTOR INTEGRATION
- Publication number 20150001612
- Publication date Jan 1, 2015
- CHEONG MIN HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCALABLE SPLIT GATE MEMORY CELL ARRAY
- Publication number 20140319593
- Publication date Oct 30, 2014
- Jane A. YATER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING DIFFERENT NON-VOLATILE MEMORIES HAVING...
- Publication number 20130193506
- Publication date Aug 1, 2013
- SUNG-TAEG KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A SEMICONDUCTOR DEVICE HAVING NANOCRYSTALS
- Publication number 20120264282
- Publication date Oct 18, 2012
- Sung-Taeg Kang
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD FOR FORMING A SEMICONDUCTOR DEVICE HAVING NANOCRYSTAL
- Publication number 20120264277
- Publication date Oct 18, 2012
- Sung-Taeg Kang
- B82 - NANO-TECHNOLOGY
Information Patent Application
INTEGRATED NON-VOLATILE MEMORY (NVM) AND METHOD THEREFOR
- Publication number 20120126309
- Publication date May 24, 2012
- JANE A. YATER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A SPLIT-GATE MEMORY CELL
- Publication number 20110207274
- Publication date Aug 25, 2011
- SUNG-TAEG KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED IN-LAID SPLIT GATE MEMORY AND METHOD OF MAKING
- Publication number 20100029052
- Publication date Feb 4, 2010
- Sung-Taeg Kang
- B82 - NANO-TECHNOLOGY
Information Patent Application
ELECTRONIC DEVICE INCLUDING DISCONTINUOUS STORAGE ELEMENTS WITHIN A...
- Publication number 20080242022
- Publication date Oct 2, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Rajesh A. Rao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Split-gate thin film storage NVM cell with reduced load-up/trap-up...
- Publication number 20080188052
- Publication date Aug 7, 2008
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE INCLUDING A MEMORY ARRAY AND CONDUCTIVE LINES
- Publication number 20080019178
- Publication date Jan 24, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Jane A. Yater
- G11 - INFORMATION STORAGE
Information Patent Application
Electronic device including discontinuous storage elements and a pr...
- Publication number 20070018229
- Publication date Jan 25, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Jane A. Yater
- G11 - INFORMATION STORAGE
Information Patent Application
Electronic device including a memory array and conductive lines
- Publication number 20070019472
- Publication date Jan 25, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Jane A. Yater
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR FORMING A MULTI-BIT NON-VOLATILE MEMORY DEVICE
- Publication number 20060079051
- Publication date Apr 13, 2006
- Gowrishankar L. Chindalore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for removing nanoclusters from selected regions
- Publication number 20050191808
- Publication date Sep 1, 2005
- Robert F. Steimle
- B82 - NANO-TECHNOLOGY
Information Patent Application
Non-volatile memory having a reference transistor
- Publication number 20050041503
- Publication date Feb 24, 2005
- Gowrishankar L. Chindalore
- G11 - INFORMATION STORAGE
Information Patent Application
VARIABLE GATE BIAS FOR A REFERENCE TRANSISTOR IN A NON-VOLATILE MEMORY
- Publication number 20050007820
- Publication date Jan 13, 2005
- Gowrishankar L. Chindalore
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY HAVING A REFERENCE TRANSISTOR AND METHOD FOR FO...
- Publication number 20040266107
- Publication date Dec 30, 2004
- Gowrishankar L. Chindalore
- G11 - INFORMATION STORAGE
Information Patent Application
GATE VOLTAGE REDUCTION IN A MEMORY READ
- Publication number 20040085815
- Publication date May 6, 2004
- Erwin J. Prinz
- G11 - INFORMATION STORAGE

Jane A. Yater

Person

Patents Grantslast 30 patents

Split gate device with doped region and method therefor

Method of forming split gate memory with improved reliability

Scalable split gate memory cell array

Method of forming split gate memory with improved reliability

Non-volatile memory (NVM) cell and a method of making

Methods for forming contact landing regions in split-gate non-volat...

Method to form a polysilicon nanocrystal thin film storage bitcell...

Integrated split gate non-volatile memory cell and logic device

Non-volatile memory (NVM) cell

Non-volatile memory (NVM) and high-k and metal gate integration usi...

Integrated split gate non-volatile memory cell and logic structure

Methods for forming contact landing regions in split-gate non-volat...

Non-volatile memory (NVM) and high voltage transistor integration

Method of gate strapping in split-gate memory cell with inlaid gate

Split gate non-volatile memory cell

Non-volatile memory (NVM) and high-K and metal gate integration usi...

Semiconductor device having different non-volatile memories having...

Method for integrating a non-volatile memory (NVM)

Method for forming a split-gate memory cell

Method for forming a semiconductor device having nanocrystals

Method for forming a semiconductor device having nanocrystals

Self-aligned in-laid split gate memory and method of making

Split-gate thin film storage NVM cell with reduced load-up/trap-up...

Process of forming an electronic device including discontinuous sto...

Electronic device including a memory array and conductive lines

Process for operating an electronic device including a memory array...

Electronic device including discontinuous storage elements and a pr...

Method for forming a multi-bit non-volatile memory device

Non-volatile memory having a reference transistor

Method for removing nanoclusters from selected regions

Patents Applicationslast 30 patents

SPLIT GATE DEVICE WITH DOPED REGION AND METHOD THEREFOR

METHOD OF FORMING SPLIT GATE MEMORY WITH IMPROVED RELIABILITY

NON-VOLATILE MEMORY (NVM) CELL AND A METHOD OF MAKING

METHOD OF FORMING SPLIT GATE MEMORY WITH IMPROVED RELIABILITY

Methods For Forming Contact Landing Regions In Split-Gate Non-Volat...

NON-VOLATILE MEMORY (NVM) CELL AND A METHOD OF MAKING

NON-VOLATILE MEMORY (NVM) AND HIGH-K AND METAL GATE INTEGRATION USI...

Methods For Forming Contact Landing Regions In Split-Gate Non-Volat...

Method to Form a Polysilicon Nanocrystal Thin Film Storage Bitcell...

INTEGRATED SPLIT GATE NON-VOLATILE MEMORY CELL AND LOGIC STRUCTURE

SPLIT GATE NON-VOLATILE MEMORY CELL

NON-VOLATILE MEMORY (NVM) AND HIGH VOLTAGE TRANSISTOR INTEGRATION

SCALABLE SPLIT GATE MEMORY CELL ARRAY

SEMICONDUCTOR DEVICE HAVING DIFFERENT NON-VOLATILE MEMORIES HAVING...

METHOD FOR FORMING A SEMICONDUCTOR DEVICE HAVING NANOCRYSTALS

METHOD FOR FORMING A SEMICONDUCTOR DEVICE HAVING NANOCRYSTAL

INTEGRATED NON-VOLATILE MEMORY (NVM) AND METHOD THEREFOR

METHOD FOR FORMING A SPLIT-GATE MEMORY CELL

SELF-ALIGNED IN-LAID SPLIT GATE MEMORY AND METHOD OF MAKING

ELECTRONIC DEVICE INCLUDING DISCONTINUOUS STORAGE ELEMENTS WITHIN A...

Split-gate thin film storage NVM cell with reduced load-up/trap-up...

ELECTRONIC DEVICE INCLUDING A MEMORY ARRAY AND CONDUCTIVE LINES

Electronic device including discontinuous storage elements and a pr...

Electronic device including a memory array and conductive lines

METHOD FOR FORMING A MULTI-BIT NON-VOLATILE MEMORY DEVICE

Method for removing nanoclusters from selected regions

Non-volatile memory having a reference transistor

VARIABLE GATE BIAS FOR A REFERENCE TRANSISTOR IN A NON-VOLATILE MEMORY

NON-VOLATILE MEMORY HAVING A REFERENCE TRANSISTOR AND METHOD FOR FO...

GATE VOLTAGE REDUCTION IN A MEMORY READ