Jaroslav Pjencak

Person

Dolni Becva, CZ

People

Patents Grantslast 30 patents

Information Patent Grant
High voltage diode on SOI substrate with trench-modified current path
- Patent number 12,125,923
- Issue date Oct 22, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Jaroslav Pjencak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,552,193
- Issue date Jan 10, 2023
- Semiconductor Components Industries, LLC
- Weize Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having optimized drain termination and method...
- Patent number 11,289,570
- Issue date Mar 29, 2022
- Semiconductor Components Industries, LLC
- Johan Camiel Julia Janssens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device including a semiconductor body or an isolation st...
- Patent number 11,251,263
- Issue date Feb 15, 2022
- Semiconductor Components Industries, LLC
- Moshe Agam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage diode on SOI substrate with trench-modified current path
- Patent number 10,971,632
- Issue date Apr 6, 2021
- Semiconductor Components Industries, LLC
- Jaroslav Pjencak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device including a drift region
- Patent number 10,896,954
- Issue date Jan 19, 2021
- Semiconductor Components Industries, LLC
- Moshe Agam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure for semiconductor device having self-biasing bu...
- Patent number 10,490,549
- Issue date Nov 26, 2019
- Semiconductor Components Industries, LLC
- Moshe Agam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure for semiconductor device having self-biasing bu...
- Patent number 10,224,323
- Issue date Mar 5, 2019
- Semiconductor Components Industries, LLC
- Moshe Agam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming an electronic device including a drift region, a...
- Patent number 10,153,213
- Issue date Dec 11, 2018
- Semiconductor Components Industries, LLC
- Moshe Agam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated floating diode structure and method therefor
- Patent number 9,425,266
- Issue date Aug 23, 2016
- Semiconductor Components Industries, L.L.C.
- Johan Camiel Julia Janssens
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD THEREFOR
- Publication number 20220209008
- Publication date Jun 30, 2022
- Semiconductor Components Industries, LLC
- Weize CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE DIODE ON SOI SUBSTRATE WITH TRENCH-MODIFIED CURRENT PATH
- Publication number 20210193847
- Publication date Jun 24, 2021
- Semiconductor Components Industries, LLC
- Jaroslav PJENCAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE DIODE ON SOI SUBSTRATE WITH TRENCH-MODIFIED CURRENT PATH
- Publication number 20200403103
- Publication date Dec 24, 2020
- Semiconductor Components Industries, LLC
- Jaroslav PJENCAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic Device Including a Semiconductor Body or an Isolation St...
- Publication number 20200295126
- Publication date Sep 17, 2020
- Semiconductor Components Industries, LLC
- Moshe AGAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING OPTIMIZED DRAIN TERMINATION AND METHOD...
- Publication number 20200066838
- Publication date Feb 27, 2020
- Semiconductor Components Industries, LLC
- Johan Camiel Julia JANSSENS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURE FOR SEMICONDUCTOR DEVICE HAVING SELF-BIASING BU...
- Publication number 20190148368
- Publication date May 16, 2019
- Semiconductor Components Industries, LLC
- Moshe AGAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic Device Including a Drift Region
- Publication number 20190088554
- Publication date Mar 21, 2019
- Semiconductor Components Industries, LLC
- Moshe AGAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURE FOR SEMICONDUCTOR DEVICE HAVING SELF-BIASING BU...
- Publication number 20190043856
- Publication date Feb 7, 2019
- Semiconductor Components Industries, LLC
- Moshe AGAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE INCLUDING A DRIFT REGION, A DRAIN REGION, AND A R...
- Publication number 20170062610
- Publication date Mar 2, 2017
- Semiconductor Components Industries, LLC
- Moshe AGAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED FLOATING DIODE STRUCTURE AND METHOD THEREFOR
- Publication number 20160104781
- Publication date Apr 14, 2016
- Semiconductor Components Industries, LLC
- Johan Camiel Julia Janssens
- H01 - BASIC ELECTRIC ELEMENTS

Jaroslav Pjencak

Person

Patents Grantslast 30 patents

High voltage diode on SOI substrate with trench-modified current path

Semiconductor device

Semiconductor device having optimized drain termination and method...

Electronic device including a semiconductor body or an isolation st...

High voltage diode on SOI substrate with trench-modified current path

Electronic device including a drift region

Isolation structure for semiconductor device having self-biasing bu...

Isolation structure for semiconductor device having self-biasing bu...

Process of forming an electronic device including a drift region, a...

Integrated floating diode structure and method therefor

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD THEREFOR

HIGH VOLTAGE DIODE ON SOI SUBSTRATE WITH TRENCH-MODIFIED CURRENT PATH

HIGH VOLTAGE DIODE ON SOI SUBSTRATE WITH TRENCH-MODIFIED CURRENT PATH

Electronic Device Including a Semiconductor Body or an Isolation St...

SEMICONDUCTOR DEVICE HAVING OPTIMIZED DRAIN TERMINATION AND METHOD...

ISOLATION STRUCTURE FOR SEMICONDUCTOR DEVICE HAVING SELF-BIASING BU...

Electronic Device Including a Drift Region

ISOLATION STRUCTURE FOR SEMICONDUCTOR DEVICE HAVING SELF-BIASING BU...

ELECTRONIC DEVICE INCLUDING A DRIFT REGION, A DRAIN REGION, AND A R...

INTEGRATED FLOATING DIODE STRUCTURE AND METHOD THEREFOR