Jay W. Strane

Person

Warwick, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Self-aligned uniform bottom spacers for VTFETS
- Patent number 11,973,125
- Issue date Apr 30, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor with bottom spacer
- Patent number 11,646,373
- Issue date May 9, 2023
- International Business Machines Corporation
- Christopher J. Waskiewicz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS top source/drain region doping and epitaxial growth for a vert...
- Patent number 11,615,990
- Issue date Mar 28, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned uniform bottom spacers for VTFETS
- Patent number 11,251,287
- Issue date Feb 15, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement bottom spacer for vertical transport field effect trans...
- Patent number 11,239,119
- Issue date Feb 1, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor with bottom spacer
- Patent number 11,217,692
- Issue date Jan 4, 2022
- International Business Machines Corporation
- Christopher J. Waskiewicz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual width finned semiconductor structure
- Patent number 11,189,532
- Issue date Nov 30, 2021
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor fins with dielectric isolation at fin bottom
- Patent number 11,043,429
- Issue date Jun 22, 2021
- International Business Machines Corporation
- Peng Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlling active fin height of FinFET device
- Patent number 10,892,193
- Issue date Jan 12, 2021
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlling active fin height of FinFET device using etch protectio...
- Patent number 10,770,361
- Issue date Sep 8, 2020
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual width finned semiconductor structure
- Patent number 10,672,668
- Issue date Jun 2, 2020
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlling active fin height of FinFET device using etch protectio...
- Patent number 10,665,514
- Issue date May 26, 2020
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor fins with dielectric isolation at fin bottom
- Patent number 10,636,709
- Issue date Apr 28, 2020
- International Business Machines Corporation
- Peng Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protection of low temperature isolation fill
- Patent number 10,586,700
- Issue date Mar 10, 2020
- International Business Machines Corporation
- Michael P. Belyansky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protection of low temperature isolation fill
- Patent number 10,535,550
- Issue date Jan 14, 2020
- International Business Machines Corporation
- Michael P. Belyansky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniform dielectric recess depth during fin reveal
- Patent number 9,984,916
- Issue date May 29, 2018
- International Business Machines Corporation
- Benjamin D. Briggs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniform dielectric recess depth during fin reveal
- Patent number 9,984,935
- Issue date May 29, 2018
- International Business Machines Corporation
- Benjamin D. Briggs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniform dielectric recess depth during fin reveal
- Patent number 9,941,134
- Issue date Apr 10, 2018
- International Business Machines Corporation
- Benjamin D. Briggs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniform dielectric recess depth during fin reveal
- Patent number 9,666,474
- Issue date May 30, 2017
- International Business Machines Corporation
- Benjamin D. Briggs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures having improved contact resistance
- Patent number 8,685,809
- Issue date Apr 1, 2014
- International Business Machines Corporation
- Bruce B. Doris
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Replacement gate MOSFET with self-aligned diffusion contact
- Patent number 8,421,077
- Issue date Apr 16, 2013
- International Business Machines Corporation
- Sameer H. Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures having improved contact resistance
- Patent number 8,299,455
- Issue date Oct 30, 2012
- International Business Machines Corporation
- Bruce B. Doris
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Pedestal guard ring having continuous M1 metal barrier connected to...
- Patent number 8,188,574
- Issue date May 29, 2012
- International Business Machines Corporation
- Matthew S. Angyal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and process for forming a self-aligned silicide contact
- Patent number 8,101,518
- Issue date Jan 24, 2012
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming self-aligned metal silicide contacts
- Patent number 8,039,382
- Issue date Oct 18, 2011
- International Business Machines Corporation
- Sunfei Fang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods for forming high performance gates and structures thereof
- Patent number 7,790,553
- Issue date Sep 7, 2010
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming self-aligned metal silicide contacts
- Patent number 7,618,891
- Issue date Nov 17, 2009
- International Business Machines Corporation
- Sunfei Fang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Top-oxide-early process and array top oxide planarization
- Patent number 7,601,646
- Issue date Oct 13, 2009
- International Business Machines Corporation
- Deok-kee Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and process for forming a self-aligned silicide contact
- Patent number 7,544,610
- Issue date Jun 9, 2009
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap interconnect structure and method of manufacture
- Patent number 7,041,571
- Issue date May 9, 2006
- International Business Machines Corporation
- Jay W. Strane
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PLACEHOLDER PROFILE FORMATION FOR BACKSIDE CONTACT
- Publication number 20240379769
- Publication date Nov 14, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE CONTACTS FOR SOURCE/DRAIN REGIONS
- Publication number 20240371728
- Publication date Nov 7, 2024
- International Business Machines Corporation
- Albert M. Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC GATE EXTENSION IN STACKED FET
- Publication number 20240355679
- Publication date Oct 24, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR POCKET BETWEEN TOP AND BOTTOM SOURCE/DRAIN REGIONS
- Publication number 20240339452
- Publication date Oct 10, 2024
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FRONTSIDE TO BACKSIDE SIGNAL VIA IN EDGE CELL
- Publication number 20240304519
- Publication date Sep 12, 2024
- International Business Machines Corporation
- Albert M. Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTORS WITH STEPPED CONTACTS
- Publication number 20240203984
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATCH CROSS COUPLE FOR STACKED AND STEPPED FET
- Publication number 20240186324
- Publication date Jun 6, 2024
- International Business Machines Corporation
- Albert M. Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEPARATE EPITAXY IN MONOLITHIC STACKED AND STEPPED NANOSHEETS
- Publication number 20240178292
- Publication date May 30, 2024
- International Business Machines Corporation
- Indira Seshadri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER CUT FOR ASYMMETRIC SOURCE/DRAIN EPITAXIAL STRUCTURE IN STACK...
- Publication number 20240162319
- Publication date May 16, 2024
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTOR WITH SELF- ALIGN BACKSIDE CONTACT
- Publication number 20240079461
- Publication date Mar 7, 2024
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FET SUBSTRATE CONTACT
- Publication number 20240071811
- Publication date Feb 29, 2024
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BOTTOM SPACER
- Publication number 20240014208
- Publication date Jan 11, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FIELD-EFFECT TRANSISTORS
- Publication number 20230395600
- Publication date Dec 7, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP CONTACT STRUCTURES FOR STACKED TRANSISTORS
- Publication number 20230395596
- Publication date Dec 7, 2023
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS TOP SOURCE/DRAIN REGION DOPING AND EPITAXIAL GROWTH FOR A VERT...
- Publication number 20230154801
- Publication date May 18, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Late Gate Extension
- Publication number 20230139379
- Publication date May 4, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED C-SHAPED VERTICAL FIELD EFFECT TRANSISTOR
- Publication number 20230067119
- Publication date Mar 2, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED UNIFORM BOTTOM SPACERS FOR VTFETS
- Publication number 20220149179
- Publication date May 12, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR WITH BOTTOM SPACER
- Publication number 20220059696
- Publication date Feb 24, 2022
- International Business Machines Corporation
- Christopher J. Waskiewicz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED UNIFORM BOTTOM SPACERS FOR VTFETS
- Publication number 20210320186
- Publication date Oct 14, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS TOP SOURCE/DRAIN REGION DOPING AND EPITAXIAL GROWTH FOR A VERT...
- Publication number 20210305104
- Publication date Sep 30, 2021
- International Business Machines Cdorporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR WITH BOTTOM SPACER
- Publication number 20210217889
- Publication date Jul 15, 2021
- International Business Machines Corporation
- Christopher J. Waskiewicz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT BOTTOM SPACER FOR VERTICAL TRANSPORT FIELD EFFECT TRANS...
- Publication number 20210098597
- Publication date Apr 1, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL WIDTH FINNED SEMICONDUCTOR STRUCTURE
- Publication number 20200194314
- Publication date Jun 18, 2020
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROLLING ACTIVE FIN HEIGHT OF FINFET DEVICE USING ETCH PROTECTIO...
- Publication number 20200176332
- Publication date Jun 4, 2020
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR FINS WITH DIELECTRIC ISOLATION AT FIN BOTTOM
- Publication number 20200152520
- Publication date May 14, 2020
- International Business Machines Corporation
- Peng Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROLLING ACTIVE FIN HEIGHT OF FINFET DEVICE USING ETCH PROTECTIO...
- Publication number 20200027796
- Publication date Jan 23, 2020
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROLLING ACTIVE FIN HEIGHT OF FINFET DEVICE USING ETCH PROTECTIO...
- Publication number 20190385916
- Publication date Dec 19, 2019
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL WIDTH FINNED SEMICONDUCTOR STRUCTURE
- Publication number 20190371678
- Publication date Dec 5, 2019
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR FINS WITH DIELECTRIC ISOLATION AT FIN BOTTOM
- Publication number 20190311955
- Publication date Oct 10, 2019
- International Business Machines Corporation
- Peng Xu
- H01 - BASIC ELECTRIC ELEMENTS

Jay W. Strane

Person

Patents Grantslast 30 patents

Self-aligned uniform bottom spacers for VTFETS

Vertical field effect transistor with bottom spacer

CMOS top source/drain region doping and epitaxial growth for a vert...

Self-aligned uniform bottom spacers for VTFETS

Replacement bottom spacer for vertical transport field effect trans...

Vertical field effect transistor with bottom spacer

Dual width finned semiconductor structure

Semiconductor fins with dielectric isolation at fin bottom

Controlling active fin height of FinFET device

Controlling active fin height of FinFET device using etch protectio...

Dual width finned semiconductor structure

Controlling active fin height of FinFET device using etch protectio...

Semiconductor fins with dielectric isolation at fin bottom

Protection of low temperature isolation fill

Protection of low temperature isolation fill

Uniform dielectric recess depth during fin reveal

Uniform dielectric recess depth during fin reveal

Uniform dielectric recess depth during fin reveal

Uniform dielectric recess depth during fin reveal

Semiconductor structures having improved contact resistance

Replacement gate MOSFET with self-aligned diffusion contact

Semiconductor structures having improved contact resistance

Pedestal guard ring having continuous M1 metal barrier connected to...

Method and process for forming a self-aligned silicide contact

Method for forming self-aligned metal silicide contacts

Methods for forming high performance gates and structures thereof

Method for forming self-aligned metal silicide contacts

Top-oxide-early process and array top oxide planarization

Method and process for forming a self-aligned silicide contact

Air gap interconnect structure and method of manufacture

Patents Applicationslast 30 patents

PLACEHOLDER PROFILE FORMATION FOR BACKSIDE CONTACT

BACKSIDE CONTACTS FOR SOURCE/DRAIN REGIONS

ASYMMETRIC GATE EXTENSION IN STACKED FET

AIR POCKET BETWEEN TOP AND BOTTOM SOURCE/DRAIN REGIONS

FRONTSIDE TO BACKSIDE SIGNAL VIA IN EDGE CELL

STACKED TRANSISTORS WITH STEPPED CONTACTS

LATCH CROSS COUPLE FOR STACKED AND STEPPED FET

SEPARATE EPITAXY IN MONOLITHIC STACKED AND STEPPED NANOSHEETS

SPACER CUT FOR ASYMMETRIC SOURCE/DRAIN EPITAXIAL STRUCTURE IN STACK...

VERTICAL TRANSISTOR WITH SELF- ALIGN BACKSIDE CONTACT

STACKED FET SUBSTRATE CONTACT

SELF-ALIGNED BOTTOM SPACER

STACKED FIELD-EFFECT TRANSISTORS

TOP CONTACT STRUCTURES FOR STACKED TRANSISTORS

CMOS TOP SOURCE/DRAIN REGION DOPING AND EPITAXIAL GROWTH FOR A VERT...

Late Gate Extension

SELF-ALIGNED C-SHAPED VERTICAL FIELD EFFECT TRANSISTOR

SELF-ALIGNED UNIFORM BOTTOM SPACERS FOR VTFETS

VERTICAL FIELD EFFECT TRANSISTOR WITH BOTTOM SPACER

SELF-ALIGNED UNIFORM BOTTOM SPACERS FOR VTFETS

CMOS TOP SOURCE/DRAIN REGION DOPING AND EPITAXIAL GROWTH FOR A VERT...

VERTICAL FIELD EFFECT TRANSISTOR WITH BOTTOM SPACER

REPLACEMENT BOTTOM SPACER FOR VERTICAL TRANSPORT FIELD EFFECT TRANS...

DUAL WIDTH FINNED SEMICONDUCTOR STRUCTURE

CONTROLLING ACTIVE FIN HEIGHT OF FINFET DEVICE USING ETCH PROTECTIO...

SEMICONDUCTOR FINS WITH DIELECTRIC ISOLATION AT FIN BOTTOM

CONTROLLING ACTIVE FIN HEIGHT OF FINFET DEVICE USING ETCH PROTECTIO...

CONTROLLING ACTIVE FIN HEIGHT OF FINFET DEVICE USING ETCH PROTECTIO...

DUAL WIDTH FINNED SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR FINS WITH DIELECTRIC ISOLATION AT FIN BOTTOM