Jean-Francois de Marneffe

Person

Bossut-Gottechain, BE

People

Patents Grantslast 30 patents

Information Patent Grant
Bias temperature instability of SiO2 layers
- Patent number 12,009,204
- Issue date Jun 11, 2024
- Imec VZW
- Jacopo Franco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Removing an organic sacrificial material from a two-dimensional mat...
- Patent number 11,056,376
- Issue date Jul 6, 2021
- Imec VZW
- Boon Teik Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufacturing method
- Patent number 10,910,259
- Issue date Feb 2, 2021
- Tokyo Electron Limited
- Koichi Yatsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of etching porous film
- Patent number 10,236,162
- Issue date Mar 19, 2019
- Tokyo Electron Limited
- Shigeru Tahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of etching porous film
- Patent number 9,859,102
- Issue date Jan 2, 2018
- Tokyo Electron Limited
- Shigeru Tahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for real-time monitoring of plasma etch unifor...
- Patent number 9,847,262
- Issue date Dec 19, 2017
- Imec VZW
- Vladimir Samara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma etching of porous substrates
- Patent number 9,595,422
- Issue date Mar 14, 2017
- Imec VZW
- Mikhaïl Baklanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma method for reducing post-lithography line width roughness
- Patent number 9,520,298
- Issue date Dec 13, 2016
- Imec VZW
- Peter De Schepper
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
BIAS TEMPERATURE INSTABILITY OF SIO2 LAYERS
- Publication number 20220181145
- Publication date Jun 9, 2022
- IMEC vzw
- Jacopo Franco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF ETCHING POROUS FILM
- Publication number 20200395221
- Publication date Dec 17, 2020
- TOKYO ELECTRON LIMITED
- Shigeru TAHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Removing an Organic Sacrificial Material From a Two-Dimensional Mat...
- Publication number 20200144094
- Publication date May 7, 2020
- IMEC vzw
- Boon Teik Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOPORE FORMED THROUGH FIN BY SELF-ALIGNMENT
- Publication number 20190271660
- Publication date Sep 5, 2019
- IMEC vzw
- Boon Teik Chan
- G01 - MEASURING TESTING
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20190181039
- Publication date Jun 13, 2019
- TOKYO ELECTRON LIMITED
- Koichi YATSUDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods and Systems for Forming a Mask Layer
- Publication number 20190057859
- Publication date Feb 21, 2019
- IMEC vzw
- Boon Teik Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF ETCHING POROUS FILM
- Publication number 20180082823
- Publication date Mar 22, 2018
- TOKYO ELECTRON LIMITED
- Shigeru TAHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF ETCHING POROUS FILM
- Publication number 20160307732
- Publication date Oct 20, 2016
- TOKYO ELECTRON LIMITED
- Shigeru TAHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA ETCHING OF POROUS SUBSTRATES
- Publication number 20160276133
- Publication date Sep 22, 2016
- IMEC vzw
- Mikhaïl Baklanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR REAL-TIME MONITORING OF PLASMA ETCH UNIFOR...
- Publication number 20160181165
- Publication date Jun 23, 2016
- IMEC vzw
- Vladimir Samara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Plasma Method for Reducing Post-Lithography Line Width Roughness
- Publication number 20150228497
- Publication date Aug 13, 2015
- Katholieke Universiteit Leuven, K.U.Leuven R&D
- Peter De Schepper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA PROBE AND METHOD FOR PLASMA DIAGNOSTICS
- Publication number 20120283973
- Publication date Nov 8, 2012
- IMEC
- VLADIMIR SAMARA
- G01 - MEASURING TESTING

Jean-Francois de Marneffe

Person

Patents Grantslast 30 patents

Bias temperature instability of SiO2 layers

Removing an organic sacrificial material from a two-dimensional mat...

Semiconductor device manufacturing method

Method of etching porous film

Method of etching porous film

Method and apparatus for real-time monitoring of plasma etch unifor...

Plasma etching of porous substrates

Plasma method for reducing post-lithography line width roughness

Patents Applicationslast 30 patents

BIAS TEMPERATURE INSTABILITY OF SIO2 LAYERS

METHOD OF ETCHING POROUS FILM

Removing an Organic Sacrificial Material From a Two-Dimensional Mat...

NANOPORE FORMED THROUGH FIN BY SELF-ALIGNMENT

SEMICONDUCTOR DEVICE MANUFACTURING METHOD

Methods and Systems for Forming a Mask Layer

METHOD OF ETCHING POROUS FILM

METHOD OF ETCHING POROUS FILM

PLASMA ETCHING OF POROUS SUBSTRATES

METHOD AND APPARATUS FOR REAL-TIME MONITORING OF PLASMA ETCH UNIFOR...

Plasma Method for Reducing Post-Lithography Line Width Roughness

PLASMA PROBE AND METHOD FOR PLASMA DIAGNOSTICS