Jeff J. Xu

Person

Jhubei, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method for fabricating a strained structure and structure formed
- Patent number 11,855,210
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a strained structure and structure formed
- Patent number 11,251,303
- Issue date Feb 15, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques providing metal gate devices with multiple barrier layers
- Patent number 11,171,134
- Issue date Nov 9, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Xiong-Fei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a strained structure and structure formed
- Patent number 10,998,442
- Issue date May 4, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFETs and methods for forming the same
- Patent number 10,964,799
- Issue date Mar 30, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-like field effect transistor (FinFET) device and method of manu...
- Patent number 10,818,661
- Issue date Oct 27, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Hao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit transistor structure with high germanium concent...
- Patent number 10,693,003
- Issue date Jun 23, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques providing metal gate devices with multiple barrier layers
- Patent number 10,522,544
- Issue date Dec 31, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Xiong-Fei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a strained structure and structure formed
- Patent number 10,510,887
- Issue date Dec 17, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFETs and methods for forming the same
- Patent number 10,510,872
- Issue date Dec 17, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-like field effect transistor (FinFET) device and method of manu...
- Patent number 10,468,408
- Issue date Nov 5, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFETs and methods for forming the same
- Patent number 10,374,063
- Issue date Aug 6, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques providing metal gate devices with multiple barrier layers
- Patent number 10,312,236
- Issue date Jun 4, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Xiong-Fei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-like field effect transistor (FinFET) device and method of manu...
- Patent number 10,090,300
- Issue date Oct 2, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jeff J. Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor structure
- Patent number 9,922,827
- Issue date Mar 20, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd
- Liang-Gi Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-like field effect transistor (FinFET) device and method of manu...
- Patent number 9,911,735
- Issue date Mar 6, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques providing metal gate devices with multiple barrier layers
- Patent number 9,831,243
- Issue date Nov 28, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Xiong-Fei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFETs and methods for forming the same
- Patent number 9,806,177
- Issue date Oct 31, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit transistor structure with high germanium concent...
- Patent number 9,660,082
- Issue date May 23, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device having EPI film in substrate trench
- Patent number 9,647,118
- Issue date May 9, 2017
- Taiwan Semiconductor Manaufacturing Company, Ltd.
- Jeff J. Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a strained structure and structure formed
- Patent number 9,564,529
- Issue date Feb 7, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-oxide-semiconductor field-effect transistor with metal-insula...
- Patent number 9,536,973
- Issue date Jan 3, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scaling EOT by eliminating interfacial layers from high-K/metal gat...
- Patent number 9,478,637
- Issue date Oct 25, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain stressor having enhanced carrier mobility and method f...
- Patent number 9,425,286
- Issue date Aug 23, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chin-Hsiang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate transistor and integrated circuits
- Patent number 9,356,109
- Issue date May 31, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jeff J. Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFETs and methods for forming the same
- Patent number 9,299,840
- Issue date Mar 29, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having interfacial layer and high-k dielect...
- Patent number 9,245,970
- Issue date Jan 26, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Liang-Gi Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-oxide-semiconductor field-effect transistor with metal-insula...
- Patent number 9,240,480
- Issue date Jan 19, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a buried stressor
- Patent number 9,219,152
- Issue date Dec 22, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming epi film in substrate trench
- Patent number 9,202,915
- Issue date Dec 1, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jeff J. Xu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR FABRICATING A STRAINED STRUCTURE AND STRUCTURE FORMED
- Publication number 20240097034
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Fabricating a Strained Structure and Structure Formed
- Publication number 20220173245
- Publication date Jun 2, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Fabricating a Strained Structure and Structure Formed
- Publication number 20200365736
- Publication date Nov 19, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Techniques Providing Metal Gate Devices with Multiple Barrier Layers
- Publication number 20200126985
- Publication date Apr 23, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Xiong-Fei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Fabricating a Strained Structure and Structure Formed
- Publication number 20200119196
- Publication date Apr 16, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFETs and Methods for Forming the Same
- Publication number 20200083358
- Publication date Mar 12, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin-Like Field Effect Transistor (FinFET) Device and Method of Manu...
- Publication number 20200066721
- Publication date Feb 27, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFETs and Methods for Forming the Same
- Publication number 20190355839
- Publication date Nov 21, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Techniques Providing Metal Gate Devices with Multiple Barrier Layers
- Publication number 20190259753
- Publication date Aug 22, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Xiong-Fei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin-Like Field Effect Transistor (FinFET) Device and Method of Manu...
- Publication number 20180175032
- Publication date Jun 21, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Techniques Providing Metal Gate Devices with Multiple Barrier Layers
- Publication number 20180076198
- Publication date Mar 15, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Xiong-Fei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFETs and Methods for Forming the Same
- Publication number 20180026119
- Publication date Jan 25, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit Transistor Structure with High Germanium Concent...
- Publication number 20170263749
- Publication date Sep 14, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Fabricating a Strained Structure and Structure Formed
- Publication number 20170148917
- Publication date May 25, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFETs and Methods for Forming the Same
- Publication number 20160181403
- Publication date Jun 23, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal-Oxide-Semiconductor Field-Effect Transistor with Metal-Insula...
- Publication number 20160133714
- Publication date May 12, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-LIKE FIELD EFFECT TRANSISTOR (FINFET) DEVICE AND METHOD OF MANU...
- Publication number 20160104706
- Publication date Apr 14, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jeff J. Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE HAVING EPI FILM IN SUBSTRATE TRENCH
- Publication number 20160079425
- Publication date Mar 17, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jeff J. Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin-Like Field Effect Transistor (FinFET) Device And Method Of Manu...
- Publication number 20160064381
- Publication date Mar 3, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A STRAINED STRUCTURE AND STRUCTURE FORMED
- Publication number 20150380554
- Publication date Dec 31, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Techniques Providing Metal Gate Devices With Multiple Barrier Layers
- Publication number 20150333064
- Publication date Nov 19, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Xiong-Fei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR STRUCTURE
- Publication number 20150249011
- Publication date Sep 3, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Liang-Gi YAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING INTERFACIAL LAYER AND HIGH-K DIELECT...
- Publication number 20150187902
- Publication date Jul 2, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Liang-Gi YAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE TRANSISTOR AND INTEGRATED CIRCUITS
- Publication number 20150035078
- Publication date Feb 5, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jeff J. Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES PROVIDING METAL GATE DEVICESWITH MULTIPLE BARRIER LAYERS
- Publication number 20150017796
- Publication date Jan 15, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Xiong-Fei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal-Oxide-Semiconductor Field-Effect Transistor with Metal-Insula...
- Publication number 20140264494
- Publication date Sep 18, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFETs and Methods for Forming the Same
- Publication number 20140252475
- Publication date Sep 11, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET/Tri-Gate Channel Doping for Multiple Threshold Voltage Tuning
- Publication number 20140227850
- Publication date Aug 14, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ying Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Forming FinFETs Having Multiple Threshold Voltages
- Publication number 20140187013
- Publication date Jul 3, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Forming FinFETs with Self-Aligned Source/Drain
- Publication number 20140187011
- Publication date Jul 3, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Method for fabricating a strained structure and structure formed

Method for fabricating a strained structure and structure formed

Techniques providing metal gate devices with multiple barrier layers

Method for fabricating a strained structure and structure formed

FinFETs and methods for forming the same

Fin-like field effect transistor (FinFET) device and method of manu...

Integrated circuit transistor structure with high germanium concent...

Techniques providing metal gate devices with multiple barrier layers

Method for fabricating a strained structure and structure formed

FinFETs and methods for forming the same

Fin-like field effect transistor (FinFET) device and method of manu...

FinFETs and methods for forming the same

Techniques providing metal gate devices with multiple barrier layers

Fin-like field effect transistor (FinFET) device and method of manu...

Method of forming a semiconductor structure

Fin-like field effect transistor (FinFET) device and method of manu...

Techniques providing metal gate devices with multiple barrier layers

FinFETs and methods for forming the same

Integrated circuit transistor structure with high germanium concent...

Device having EPI film in substrate trench

Method for fabricating a strained structure and structure formed

Metal-oxide-semiconductor field-effect transistor with metal-insula...

Scaling EOT by eliminating interfacial layers from high-K/metal gat...

Source/drain stressor having enhanced carrier mobility and method f...

Metal gate transistor and integrated circuits

FinFETs and methods for forming the same

Semiconductor structure having interfacial layer and high-k dielect...

Metal-oxide-semiconductor field-effect transistor with metal-insula...

Semiconductor device with a buried stressor

Method of forming epi film in substrate trench

Patents Applicationslast 30 patents

METHOD FOR FABRICATING A STRAINED STRUCTURE AND STRUCTURE FORMED

Method for Fabricating a Strained Structure and Structure Formed

Method for Fabricating a Strained Structure and Structure Formed

Techniques Providing Metal Gate Devices with Multiple Barrier Layers

Method for Fabricating a Strained Structure and Structure Formed

FinFETs and Methods for Forming the Same

Fin-Like Field Effect Transistor (FinFET) Device and Method of Manu...

FinFETs and Methods for Forming the Same

Techniques Providing Metal Gate Devices with Multiple Barrier Layers

Fin-Like Field Effect Transistor (FinFET) Device and Method of Manu...

Techniques Providing Metal Gate Devices with Multiple Barrier Layers

FinFETs and Methods for Forming the Same

Integrated Circuit Transistor Structure with High Germanium Concent...

Method for Fabricating a Strained Structure and Structure Formed

FinFETs and Methods for Forming the Same

Metal-Oxide-Semiconductor Field-Effect Transistor with Metal-Insula...

FIN-LIKE FIELD EFFECT TRANSISTOR (FINFET) DEVICE AND METHOD OF MANU...

DEVICE HAVING EPI FILM IN SUBSTRATE TRENCH

Fin-Like Field Effect Transistor (FinFET) Device And Method Of Manu...

METHOD FOR FABRICATING A STRAINED STRUCTURE AND STRUCTURE FORMED

Techniques Providing Metal Gate Devices With Multiple Barrier Layers

METHOD OF FORMING A SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR STRUCTURE HAVING INTERFACIAL LAYER AND HIGH-K DIELECT...

METAL GATE TRANSISTOR AND INTEGRATED CIRCUITS

TECHNIQUES PROVIDING METAL GATE DEVICESWITH MULTIPLE BARRIER LAYERS

Metal-Oxide-Semiconductor Field-Effect Transistor with Metal-Insula...

FinFETs and Methods for Forming the Same

FinFET/Tri-Gate Channel Doping for Multiple Threshold Voltage Tuning

Methods for Forming FinFETs Having Multiple Threshold Voltages

Methods for Forming FinFETs with Self-Aligned Source/Drain