Jeff Ramer

Person

Freemont, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Nucleation of aluminum nitride on a silicon substrate using an ammo...
- Patent number 10,174,439
- Issue date Jan 8, 2019
- Samsung Electronics Co., Ltd.
- William E. Fenwick
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nucleation of aluminum nitride on a silicon substrate using an ammo...
- Patent number 9,617,656
- Issue date Apr 11, 2017
- Toshiba Corporation
- William E. Fenwick
- C30 - CRYSTAL GROWTH
Information Patent Grant
High electron mobility transistor with periodically carbon doped ga...
- Patent number 9,608,103
- Issue date Mar 28, 2017
- Toshiba Corporation
- Jeffrey Craig Ramer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LED with improved injection efficiency
- Patent number 9,012,953
- Issue date Apr 21, 2015
- Kabushiki Kaisha Toshiba
- Steven Lester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting regions for use with light emitting devices
- Patent number 8,853,668
- Issue date Oct 7, 2014
- Kabushiki Kaisha Toshiba
- Jeff Ramer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LED with improved injection efficiency
- Patent number 8,684,749
- Issue date Apr 1, 2014
- Toshiba Techno Center Inc.
- Steven Lester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LED with improved injection efficiency
- Patent number 8,525,221
- Issue date Sep 3, 2013
- Toshiba Techno Center, Inc.
- Steven Lester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High brightness LED utilizing a roughened active layer and conforma...
- Patent number 8,232,568
- Issue date Jul 31, 2012
- Bridgelux, Inc.
- Ling Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light sources with serially connected LED segments including curren...
- Patent number 8,084,775
- Issue date Dec 27, 2011
- Bridgelux, Inc.
- Ghulam Hasnain
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Buffer layer for Gallium Nitride-on-Silicon epitaxy
- Publication number 20200035482
- Publication date Jan 30, 2020
- Jeff C. Ramer
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
NUCLEATION OF ALUMINUM NITRIDE ON A SILICON SUBSTRATE USING AN AMMO...
- Publication number 20170198410
- Publication date Jul 13, 2017
- TOSHIBA CORPORATION
- Will Fenwick
- C30 - CRYSTAL GROWTH
Information Patent Application
High Electron Mobility Transistor with Periodically Carbon Doped Ga...
- Publication number 20160099345
- Publication date Apr 7, 2016
- TOSHIBA CORPORATION
- Jeffrey Craig Ramer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT EMITTING REGIONS FOR USE WITH LIGHT EMITTING DEVICES
- Publication number 20150056731
- Publication date Feb 26, 2015
- Kabushiki Kaisha Toshiba
- Jeff RAMER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NUCLEATION OF ALUMINUM NITRIDE ON A SILICON SUBSTRATE USING AN AMMO...
- Publication number 20140318443
- Publication date Oct 30, 2014
- MANUTIUS IP INC.
- William E. FENWICK
- C30 - CRYSTAL GROWTH
Information Patent Application
LED with Improved Injection Efficiency
- Publication number 20140225059
- Publication date Aug 14, 2014
- BRIDGELUX, INC.
- Long Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LED WITH IMPROVED INJECTION EFFICIENCY
- Publication number 20140151728
- Publication date Jun 5, 2014
- TOSHIBA TECHNO CENTER INC.
- STEVEN LESTER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LED with Improved Injection Efficiency
- Publication number 20130316483
- Publication date Nov 28, 2013
- TOSHIBA TECHNO CENTER INC.
- STEVEN LESTER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT EMITTING REGIONS FOR USE WITH LIGHT EMITTING DEVICES
- Publication number 20130082236
- Publication date Apr 4, 2013
- BRIDGELUX, INC.
- Jeff Ramer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nucleation of Aluminum Nitride on a Silicon Substrate Using an Ammo...
- Publication number 20130026480
- Publication date Jan 31, 2013
- BRIDGELUX, INC.
- William E. Fenwick
- C30 - CRYSTAL GROWTH
Information Patent Application
Multi-Junction LED
- Publication number 20120058584
- Publication date Mar 8, 2012
- Ghulam Hasnain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LED with Improved Injection Efficiency
- Publication number 20110121357
- Publication date May 26, 2011
- Steven Lester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Junction LED
- Publication number 20100219431
- Publication date Sep 2, 2010
- Ghulam Hasnain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Brightness LED Utilizing a Roughened Active Layer and Conforma...
- Publication number 20100133562
- Publication date Jun 3, 2010
- Ling Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Nucleation of aluminum nitride on a silicon substrate using an ammo...

Nucleation of aluminum nitride on a silicon substrate using an ammo...

High electron mobility transistor with periodically carbon doped ga...

LED with improved injection efficiency

Light emitting regions for use with light emitting devices

LED with improved injection efficiency

LED with improved injection efficiency

High brightness LED utilizing a roughened active layer and conforma...

Light sources with serially connected LED segments including curren...

Patents Applicationslast 30 patents

Buffer layer for Gallium Nitride-on-Silicon epitaxy

NUCLEATION OF ALUMINUM NITRIDE ON A SILICON SUBSTRATE USING AN AMMO...

High Electron Mobility Transistor with Periodically Carbon Doped Ga...

LIGHT EMITTING REGIONS FOR USE WITH LIGHT EMITTING DEVICES

NUCLEATION OF ALUMINUM NITRIDE ON A SILICON SUBSTRATE USING AN AMMO...

LED with Improved Injection Efficiency

LED WITH IMPROVED INJECTION EFFICIENCY

LED with Improved Injection Efficiency

LIGHT EMITTING REGIONS FOR USE WITH LIGHT EMITTING DEVICES

Nucleation of Aluminum Nitride on a Silicon Substrate Using an Ammo...

Multi-Junction LED

LED with Improved Injection Efficiency

Multi-Junction LED

High Brightness LED Utilizing a Roughened Active Layer and Conforma...